Philips Semiconductors Product specification
Rectifier diodes PBYR1645B series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching VR = 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance IF(AV) = 16 A
• Low thermal resistance VF ≤ 0.57 V
GENERAL DESCRIPTION PINNING SOT404
Schottky rectifier diodes in a plastic PIN DESCRIPTION
envelope. Intended for use as
output rectifiersin low voltage,high 1 no connection
frequency switched mode power
supplies. 2 cathode1
The PBYR1645B series is supplied 3 anode
in the surface mounting SOT404
package. tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR16 40B 45B
VRRM Peak repetitive reverse - 40 45 V
voltage
VRWM Working peak reverse - 40 45 V
voltage
VRContinuous reverse voltage Tmb ≤ 116 ˚C - 40 45 V
IF(AV) Average rectified forward square wave; δ = 0.5; Tmb ≤ 131 ˚C - 16 A
current
IFRM Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 131 ˚C - 32 A
current
IFSM Non-repetitive peak forward t = 10 ms - 135 A
current t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
IRRM Peak repetitive reverse pulse width and repetition rate - 1 A
surge current limited by Tj max
TjOperating junction - 150 ˚C
temperature
Tstg Storage temperature - 65 175 ˚C
k a
tab 3
13
tab
2
1 it is not possible to make connection to pin 2 of the SOT404 package.
July 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes PBYR1645B series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction - - 1.5 K/W
to mounting base
Rth j-a Thermal resistance junction pcb mounted, minimum footprint, FR4 - 50 - K/W
to ambient board
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFForward voltage IF = 16 A; Tj = 125˚C - 0.53 0.57 V
IF = 16 A - 0.55 0.63 V
IRReverse current VR = VRWM - 0.2 1.7 mA
VR = VRWM; Tj = 100˚C - 27 40 mA
CdJunction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 470 - pF
July 1998 2 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes PBYR1645B series
Schottky barrier
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current; I
R
= f(V
R
);
parameter T
j
Fig.5. Typical junction capacitance; C
d
= f(V
R
);
f = 1 MHz; T
j
= 25˚C to 125 ˚C.
Fig.6. Transient thermal impedance; Z
th j-mb
= f(t
p
).
0 5 10 15 20 25
0
5
10
15
0.5
0.2
0.1
PBYR1645
Rs = 0.013 Ohms
Vo = 0.37 V D = 1.0
D =
t
p
t
p
T
T
t
I
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Tmb(max) (C)
150
142.5
135
127.5
025 50
100
10
1
0.1
0.01
Reverse current, IR (mA)
Reverse voltage, VR (V)
PBYR1645
50 C
75 C
100 C
125 C
Tj = 25 C
0 5 10 15
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
PBYR1645
Rs = 0.013 Ohms
Vo = 0.37 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Tmb(max) (C)
150
142.5
135
127.5
110 100
100
10000
1000
Cd / pF
VR / V
PBYR1645
0 0.2 0.4 0.6 0.8 1 1.2 1.4
0
10
20
30
40
50 PBYR1645
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
0.01
0.1
1
10
PBYR1645
1us 10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
July 1998 3 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes PBYR1645B series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.7. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.8. SOT404 : soldering pattern for surface mounting
.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
July 1998 4 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes PBYR1645B series
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998 5 Rev 1.200
