BSS138DW
Document number: DS30203 Rev. 12 - 2 1 of 5
www.diodes.com September 2009
© Diodes Incorporated
BSS138DW
DUAL N-CHANNEL ENHANCEMENT MODE FIEL D EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Available in Lead Free/RoHS Compliant Version (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Notes 5 and 6)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. “Green” Molding Compound
(Note 6). UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol BSS138DW Units
Drain-Source Voltage VDSS 50 V
Drain-Gate Voltage (Note 3) VDGR 50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 1) Continuous ID 200 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol BSS138DW Units
Total Power Dissipation (Note 1) PD 200 mW
Thermal Resistance, Junction to Ambient R
θ
JA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 50 75 ⎯ V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 µA VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS
(
th
)
0.5 1.2 1.5 V VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS
(
ON
)
⎯ 1.4 3.5 Ω VGS = 10V, ID = 0.22A
Forward Transconductance gFS 100 ⎯ ⎯ mS VDS =25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ ⎯ 50 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ ⎯ 25 pF
Reverse Transfer Capacitance Crss ⎯ ⎯ 8.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
ON
)
⎯ ⎯ 20 ns VDD = 30V, ID = 0.2A,
RGEN = 50Ω
Turn-Off Delay Time tD
(
OFF
)
⎯ ⎯ 20 ns
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. RGS ≤ 20KΩ.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
SOT-363
TOP VIEW Internal Schematic
TOP VIEW
S
1
D
1
D
2
S
2
G
1
G
2
BSS138DW
Document number: DS30203 Rev. 12 - 2 2 of 5
www.diodes.com September 2009
© Diodes Incorporated
BSS138DW
0
0.1
0.2
0.3
0.4
0.5
0.6
1
03
254 7
68
910
I, D
R
AIN-S
O
U
R
C
E
C
U
R
R
EN
T
(A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
DS
T = 25C
j
°
V = 3.5V
GS
V = 3.25V
GS
V = 3.0V
GS
V = 2.75V
GS
V = 2.5V
GS
0
V , GATE-SOURCE VOL TAGE (V)
Fig. 2 T ransfer Characteristics
GS
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0.8
011.50.5 2 3.5 4 4.52.5 3
I, D
R
AIN-S
O
U
R
C
E
C
U
R
R
EN
T
(A)
D
-55 C
°
150 C
°
25 C
°
V = 1V
DS
0.65
T, JUNCTION TEMPERATURE (°C)
Fig . 3 Drain-S ource On Resist ance vs . Junction Temperatur e
j
0.85
1.05
1.25
1.65
1.45
1.85
2.05
2.25
2.45
-55 -5 45 95 145
V = 10V
GS
V = 4.5V
GS
I = 0.5A
D
I = 0.075A
D
R , NORMALIZED DRAIN-SOURCE
ON-RES ISTANCE ( )
DS(ON)
Ω
0
0.2
0.4
0.6
0.8
1
1.4
1.2
2
1.8
1.6
-55 -25 50 10075
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
T, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
j
125
250150
0
I , DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
4
5
6
7
8
00.02 0.04 0.06 0.08 0.16
0.14
0.120.1
150 C
°
-55 C
°
25 C
°
V = 2.5V
GS
R , DRAIN-SOURCE ON-RESIST A NCE ( )
DS(ON)
Ω
0
I , DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
5
4
6
7
8
9
00.05 0.1 0.2
0.15 0.25
150 C
°
-55 C
°
25 C
°
V = 2.75V
GS
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
BSS138DW
Document number: DS30203 Rev. 12 - 2 3 of 5
www.diodes.com September 2009
© Diodes Incorporated
BSS138DW
0
1
2
3
4
5
6
00.5
I , DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
D
150 C
°
-55 C
°
25 C
°
V = 4.5V
GS
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.5
1
1.5
2
2.5
3
3.5
00.5
I , DRAIN-CURRENT (A)
Fig. 8 Drain-Source On-Resistance vs. Drain-Current
D
150 C
°
-55 C
°
25 C
°
V = 10V
GS
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
I, DI
O
DE
C
U
R
R
EN
T
(A)
D
0.001
0.01
0.1
1
V , DIODE FORWARD VOL TAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
SD
00.2 0.4 0.6 0.8 11.2
150 C
°
-55 C
°
25 C
°
C
,
C
A
P
A
C
I
T
AN
C
E (
p
F
)
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Fig . 1 0 Ca pac it anc e vs. Drai n- Sou r ce Vol t age
DS
0510 15 20 25 30
V = 0V
f = 1MHz
GS
C
rss
C
oss
C
iss
Ordering Information (Note 7)
Part Number Case Packaging
BSS138DW-7-F SOT-363 3000/Tape & Reel
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
K38
K38
YM
YM
BSS138DW
Document number: DS30203 Rev. 12 - 2 4 of 5
www.diodes.com September 2009
© Diodes Incorporated
BSS138DW
Package Outline Dimensions
Suggested Pad Layout
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α 0° 8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
A
M
JL
D
B C
H
K
F
X
Z
Y
C1
C2
C2
G
BSS138DW
Document number: DS30203 Rev. 12 - 2 5 of 5
www.diodes.com September 2009
© Diodes Incorporated
BSS138DW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
