fAMOSPEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for use in general purpose power amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Voltage - Veeoius)= 45V(Min)- BD243,BD244 60V(Min)- BD243A,BD244A 80V(Min)- BD243B,BD2448 100V(Min)- BD243C,BD244C * DC Current Gain hFE= 30(Min)@I,= 0,3A * Current Gain-Bandwidth Product fT=3.0 MHz (Min)@ |,=500mA MAXIMUM RATINGS NPN PNP BD243. BD244 BD243A BD244A BD243B BD244B BD243C BD244C _ 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45 -100 VOLTS 65 WATTS Characteristic Symbol} BD243 |BD243A|BD243B|BD243C/ Unit BD244 | BD244A| BD244B | BD244C Collector-Emitter Voltage Voeo 45 60 80 100 Vv Collector-Base Voltage Veso 45 60 80 100 Vv Emitter-Base Voltage Vero 5.0 Vv Collector Current - Continuous lo 6.0 A ~ Peak 10 Base Current ls 2.0 A Total Power Dissipation@T, = 25C Py 65 Ww Derate above 25C 0.52 wc Operating and Storage Junction T,.Tst C Temperature Range -65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case| Rejc 1.92 C FIGURE -1 POWER DERATING $8883 nN Pp , POWER DISSIPATION(WATTS) _ So o 25 50 75 100 Te, TEMPERATURE(C) 125 150 > 23 IT if ec jemi - nah} en F ake PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 14.6 | 15.31 B 9.78 | 10.42 Cc 5.01 6.52 D 13.06 | 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 498 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 3.70 3.90BD243,A,B,C NPN / BD244,A,B,C PNP Sa ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1}) BD243,BD244 Voeo(sus) 45 Vv (l_= 30 mA, Ig= 0) BD243A,BD244A 60 BD243B,BD244B 80 BD243C,BD244C 100 Collector Cutoff Current lcEo mA (Vog= 30 V, I= 0) BD243/44/43A/44A 0.7 (Vog= 60 V, I= 0) BD243B/44B/43C/44C 0.7 Collector Cutoff Current lces mA (Veg= 45 V, Vep= 0) BD243/44 0.4 (V.g=.60 V, V_g= 0) BD243A/44A 0.4 (V,,= 80 V, V..= 9) BD243B/44B 0.4 (V,,= 100 V, V.,= 0) BD243C/44C 0.4 Emitter Cutoff Current lego mA (Vep= 5.0 V, ip= 0) 1.0 ON CHARACTERISTICS (1) DC Current Gain hFE (Vog = 4.0 V, Ip = 0.3 A) 30 (Veg = 4.0 V, I, = 3.0 A) 15 Collector-Emitter Saturation Voltage Vee{sat) V (lp = 6.0A, I, =1.0A) 1.5 Base-Emitter On Voltage Vee;on) Vv (I, =6.0 A, Veg= 4.0 V) 2.0 DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Prodct (2) fy MHz (I,=500 MA, Veg=10 V, f= 1MHz) 3.0 Small-Signal Current Gain hfe (I5= 500 MA, Vog= 10 V, f= 1KHz ) 20 (1) Pulse Test: Pulse width = 300 s , Duty Cycle = 2.0% (2) f, = | h,, F scatBD243,A,B,C NPN / BD244,A,B,C PNP SS DC CURRENT GAIN COLLECTOR SATURATION REGION Tya28C = hee , DC CURRENT GAIN Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) o 006 04 02 03 05 1.0 20 3.0 6.0 10 20 50 100 200 500 1000 i; , COLLECTOR CURRENT (AMP) ik, BASE CURRENT (mA) TURN-ON TIME TURN-OFF TIME 2 3 r e 006 04 02 05 1 2 6 0.06 (0.1 0.2 05 1 2 6 lc , COLLECTOR CURRENT (AMP) lc , COLLECTOR CURRENT (AMP) "ON" VOLTAGES ACTIVE REGION SAFE OPERATING AREA 1 a E < oS E & 54 wi 3 2 x a Vee(set) Ble/ig210 e > y - Bonding Wire Linit > Ver@ Vee=4.0V 3 Second Breakdown 0. o Thermally Limit 9 To=25C(Singe Puse) BD2438,B0244B Vee(sat) @ lo/p?10 0 0.1 006 01 0.2 0.5 1.0 2.0 6.0 5 10 20 50 100 IC , COLLECTOR CURRENT (AMP) VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)