1
FEATURES
110
2
9
3
8
4
7
VCC
S
D+
D–
OE
1D+
1D–
2D+
2D–
GND
56
APPLICATIONS
DESCRIPTION
1
10
2
9
3
8
4
7
VCC
S
D+
D–
OE
1D+
1D–
2D+
2D–
GND
5
6
TS3USB221A
www.ti.com
.......................................................................................................................................................................................... SCDS277 – NOVEMBER 2008
ESD PROTECTED, HIGH-SPEED USB 2.0 (480-Mbps)1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE
RSE PACKAGE•V
CC
Operation at 2.5 V to 3.3 V
(TOP VIEW)•V
I/O
Accepts Signals Up to 5.5 V•1.8-V Compatible Control-Pin Inputs•Low-Power Mode When OE Is Disabled (1 µA)•r
ON
= 6 ΩMaximum•Δr
ON
= 0.2 ΩTypical•C
io(on)
= 6 pF Typical•Low Power Consumption (30 µA Maximum)•High Bandwidth (900 MHz Typical)•Latch-Up Performance Exceeds 100 mAPer JESD 78, Class II•ESD Performance Tested Per JESD 22
RSE PACKAGE– 7000-V Human-Body Model
(BOTTOM VIEW)(A114-B, Class II)– 1000-V Charged-Device Model (C101)•ESD Performance I/O to GND– 12-kV Human-Body Model
•Routes Signals for USB 1.0, 1.1, and 2.0
The TS3USB221A is a high-bandwidth switchspecially designed for the switching of high-speedUSB 2.0 signals in handset and consumerapplications, such as cell phones, digital cameras,and notebooks with hubs or controllers with limitedUSB I/Os. The wide bandwidth (900 MHz) of thisswitch allows signals to pass with minimum edge andphase distortion. The device multiplexes differentialoutputs from a USB host device to one of twocorresponding outputs. The switch is bidirectional andoffers little or no attenuation of the high-speed signalsat the outputs. It is designed for low bit-to-bit skewand high channel-to-channel noise isolation, and iscompatible with various standards, such ashigh-speed USB 2.0 (480 Mbps).
The TS3USB221A integrates ESD protection cells onall pins, is available in a tiny µQFN package (2.0 mm× 1.5 mm) and is charaterized over the free airtemperature range from – 40 ° C to 85 ° C.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2008, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
BLOCK DIAGRAM
D−
D+
1D−
1D+
2D−
2D+
S
OE
A
EN (see Note A)
B
Charge
Pump
VCC
TS3USB221A
SCDS277 – NOVEMBER 2008 ..........................................................................................................................................................................................
www.ti.com
ORDERING INFORMATION
T
A
PACKAGE
(1) (2)
ORDERABLE PART NUMBER TOP-SIDE MARKING
– 40 ° C to 85 ° C QFN – RSE Reel of 3000 TS3USB221ARSER LHR
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging .(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TIwebsite at www.ti.com .
PIN DESCRIPTION
NAME DESCRIPTION
OE Bus-switch enableS Select inputD Bus AnD Bus B
TRUTH TABLE
S OE FUNCTION
X H DisconnectL L D = 1DH L D = 2D
SIMPLIFIED SCHEMATIC, EACH FET SWITCH (SW)
A. EN is the internal enable signal applied to the switch.
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Product Folder Link(s): TS3USB221A
ABSOLUTE MAXIMUM RATINGS
(1)
PACKAGE THERMAL IMPEDANCE
RECOMMENDED OPERATING CONDITIONS
TS3USB221A
www.ti.com
.......................................................................................................................................................................................... SCDS277 – NOVEMBER 2008
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
CC
Supply voltage range – 0.5 4.6 VV
IN
Control input voltage range
(2) (3)
– 0.5 7 VV
I/O
Switch I/O voltage range
(2) (3) (4)
– 0.5 7 VI
IK
Control input clamp current V
IN
< 0 – 50 mAI
I/OK
I/O port clamp current V
I/O
< 0 – 50 mAI
I/O
ON-state switch current
(5)
± 120 mAContinuous current through V
CC
or GND ± 100 mAT
stg
Storage temperature range – 65 150 ° C
(1) Stresses beyond those listed under " absolute maximum ratings " may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under " recommended operatingconditions " is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.(2) All voltages are with respect to ground, unless otherwise specified.(3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.(4) V
I
and V
O
are used to denote specific conditions for V
I/O
.(5) I
I
and I
O
are used to denote specific conditions for I
I/O
.
over operating free-air temperature range (unless otherwise noted)
UNIT
θ
JA
Package thermal impedance
(1)
RSE package 243 ° C/W
(1) The package thermal impedance is calculated in accordance with JESD 51-7.
MIN MAX UNIT
V
CC
Supply voltage 2.3 3.6 VV
CC
= 2.3 V to 2.7 V 0.46 × V
CCV
IH
High-level control input voltage VV
CC
= 2.7 V to 3.6 V 0.46 × V
CC
V
CC
= 2.3 V to 2.7 V 0.25 × V
CCV
IL
Low-level control input voltage VV
CC
= 2.7 V to 3.6 V 0.25 × V
CC
V
I/O
Data input/output voltage 0 5.5 VT
A
Operating free-air temperature – 40 85 ° C
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s): TS3USB221A
ELECTRICAL CHARACTERISTICS
(1)
DYNAMIC ELECTRICAL CHARACTERISTICS
TS3USB221A
SCDS277 – NOVEMBER 2008 ..........................................................................................................................................................................................
www.ti.com
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP
(2)
MAX UNIT
V
IK
V
CC
= 3.6 V, 2.7 V, I
I
= – 18 mA – 1.8 VControlI
IN
V
CC
= 3.6 V, 2.7 V, 0 V, V
IN
= 0 V to 3.6 V ± 1 µAinputs
V
CC
= 3.6 V, 2.7 V, V
IN
= V
CC
or GND,I
OZ
(3)
± 1 µAV
O
= 0 V to 5.25 V, V
I
= 0 V, Switch OFFV
I/O
= 0 V to 5.25 V ± 2I
(OFF)
V
CC
= 0 V V
I/O
= 0 V to 3.6 V ± 2 µAV
I/O
= 0 V to 2.7 V ± 1V
CC
= 3.6 V, 2.7 V, I
I/O
= 0 V,I
CC
30 µAV
IN
= V
CC
or GND, Switch ON or OFFI
CC
V
CC
= 3.6 V, 2.7 V, Switch disabled,(low power 1 µAV
IN
= V
CC
or GND, OE in high statemode)
V
CC
= 3.6 V 20Control One input at 1.8 V,ΔI
CC
(4)
µAinputs Other inputs at V
CC
or GND
V
CC
= 2.7 V 0.5ControlC
in
V
CC
= 3.3 V, 2.5 V, V
IN
= V
CC
or 0 V 1.5 2.5 pFinputsC
io(OFF)
V
CC
= 3.3 V, 2.5 V, V
I/O
= V
CC
or 0 V, Switch OFF 3.5 5 pFC
io(ON)
V
CC
= 3.3 V, 2.5 V, V
I/O
= V
CC
or 0 V, Switch ON 6 7.5 pFV
I
= 0 V, I
O
= 30 mA 3 6r
ON
(5)
V
CC
= 3 V, 2.3 V ΩV
I
= 2.4 V, I
O
= – 15 mA 3.4 6V
I
= 0 V, I
O
= 30 mA 0.2Δr
ON
V
CC
= 3 V, 2.3 V ΩV
I
= 1.7, I
O
= – 15 mA 0.2V
I
= 0 V, I
O
= 30 mA 1r
ON(flat)
V
CC
= 3 V, 2.3 V ΩV
I
= 1.7, I
O
= – 15 mA 1
(1) V
IN
and I
IN
refer to control inputs. V
I
, V
O
, I
I
, and I
O
refer to data pins.(2) All typical values are at V
CC
= 3.3 V (unless otherwise noted), T
A
= 25 ° C.(3) For I/O ports, the parameter I
OZ
includes the input leakage current.(4) This is the increase in supply current for each input that is at the specified TTL voltage level, rather than V
CC
or GND.(5) Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance isdetermined by the lower of the voltages of the two (A or B) terminals.
over operating range, T
A
= – 40 ° C to 85 ° C, V
CC
= 3.3 V ± 10%, GND = 0 V
PARAMETER TEST CONDITIONS TYP UNIT
X
TALK
Crosstalk R
L
= 50 , f = 250 MHz – 40 dBO
IRR
OFF isolation R
L
= 50 , f = 250 MHz – 41 dBBW Bandwidth ( – 3 dB) R
L
= 50 0.9 GHz
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Product Folder Link(s): TS3USB221A
DYNAMIC ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
SWITCHING CHARACTERISTICS
TS3USB221A
www.ti.com
.......................................................................................................................................................................................... SCDS277 – NOVEMBER 2008
over operating range, T
A
= – 40 ° C to 85 ° C, V
CC
= 2.5 V ± 10%, GND = 0 V
PARAMETER TEST CONDITIONS TYP UNIT
X
TALK
Crosstalk R
L
= 50 , f = 250 MHz -39 dBO
IRR
OFF isolation R
L
= 50 , f = 250 MHz -40 dBBW Bandwidth (3 dB) R
L
= 50 0.9 GHz
over operating range, T
A
= – 40 ° C to 85 ° C, V
CC
= 3.3 V ± 10%, GND = 0 V
PARAMETER MIN TYP
(1)
MAX UNIT
t
pd
Propagation delay
(2) (3)
0.25 nsS to D, nD 30t
ON
Line enable time nsOE to D, nD 17S to D, nD 12t
OFF
Line disable time nsOE to D, nD 10t
SK(O)
Output skew between center port to any other port
(2)
0.1 0.2 nst
SK(P)
Skew between opposite transitions of the same output (t
PHL
– t
PLH
)
(2)
0.1 0.2 ns
(1) For Max or Min conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.(2) Specified by design(3) The bus switch contributes no propagational delay other than the RC delay of the on resistance of the switch and the load capacitance.The time constant for the switch alone is of the order of 0.25 ns for 10-pF load. Since this time constant is much smaller than the rise/falltimes of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch, when used ina system, is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side.
over operating range, T
A
= – 40 ° C to 85 ° C, V
CC
= 2.5 V ± 10%, GND = 0 V
PARAMETER MIN TYP
(1)
MAX UNIT
t
pd
Propagation delay
(2) (3)
0.25 nsS to D, nD 50t
ON
Line enable time nsOE to D, nD 32S to D, nD 23t
OFF
Line disable time nsOE to D, nD 12t
SK(O)
Output skew between center port to any other port
(2)
0.1 0.2 nst
SK(P)
Skew between opposite transitions of the same output (t
PHL
– t
PLH
)
(2)
0.1 0.2 ns
(1) For Max or Min conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.(2) Specified by design(3) The bus switch contributes no propagational delay other than the RC delay of the on resistance of the switch and the load capacitance.The time constant for the switch alone is of the order of 0.25 ns for 10-pF load. Since this time constant is much smaller than the rise/falltimes of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch, when used ina system, is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side.
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Link(s): TS3USB221A
APPLICATION INFORMATION
100.0E+3 1.0E+6 10.0E+6 100.0E+6 1.0E+9 10.0E+9
Frequency (Hz)
–120
–100
–80
–60
–40
–20
0
Attenuation (dB)
100.0E+3 1.0E+6 10.0E+6 100.0E+6 1.0E+9 10.0E+9
Frequency (Hz)
–7
–6
–5
–4
–3
–2
–1
0
Gain (dB)
–120
–100
–80
–60
–40
–20
0
100.0E+3 1.0E+6 10.0E+6 100.0E+6 1.0E+9 10.0E+9
Frequency (Hz)
Attenuation (dB)
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V (V)
IN
r ( )
on Ω
V = 3 V
CC
V = 2.3 V
CC
TS3USB221A
SCDS277 – NOVEMBER 2008 ..........................................................................................................................................................................................
www.ti.com
Figure 1. Gain vs Frequency Figure 2. OFF Isolation vs Frequency
Figure 3. Crosstalk vs Frequency Figure 4. r
on
vs V
IN
(I
OUT
= – 15 mA)
Figure 5. r
ON
vs V
IN
(I
OUT
= 30 mA)
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Product Folder Link(s): TS3USB221A
Time ( 10 ) (s)X–9
Differential Signal (V)
0.0
–0.5
0.5
–0.4
0.4
–0.3
0.3
–0.2
0.2
–0.1
0.1
0.0
0.2 0.4 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Time ( 10 ) (s)X–9
Differential Signal (V)
0.0
–0.5
0.5
–0.4
0.4
–0.3
0.3
–0.2
0.2
–0.1
0.1
0.0
0.2 0.4 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Time ( 10 ) (s)X–9
Differential Signal (V)
0.0
–0.5
0.5
–0.4
0.4
–0.3
0.3
–0.2
0.2
–0.1
0.1
0.0
0.2 0.4 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0
TS3USB221A
www.ti.com
.......................................................................................................................................................................................... SCDS277 – NOVEMBER 2008
Figure 6. Eye Pattern: 480-Mbps USB Signal With No Figure 7. Eye Pattern: 480-Mbps USB Signal With SwitchSwitch (Through Path) NC Path
Figure 8. Eye Pattern: 480-Mbps USB Signal With SwitchNO Path
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Link(s): TS3USB221A
PARAMETER MEASUREMENT INFORMATION
CL(2) RL
VIN
VCC
GND
1D or 2D VOUT1 or VOUT2
VCTRL
1D or 2D
D
Logic
Input(1)
V+
VCOM
500 Ω
RLCL
50 pFtON
TEST
V+
500 Ω50 pFtOFF
50%
tON tOFF
50%
90% 90%
Logic
Input
(VI)
1.8 V
Switch
Output
(VOUT1 or VOUT2)
0
CL(2) RL
S
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
VOH
VOL
1D
2D D
VOUT1
VIN
Channel OFF: 1D to D
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
50 W
VCC
GND
50 W
50 W
Network Analyzer
Source
Signal
VCTRL
+
VCTRL = VCC or GND
S
TS3USB221A
SCDS277 – NOVEMBER 2008 ..........................................................................................................................................................................................
www.ti.com
Figure 9. Turn-On (t
ON
) and Turn-Off Time (t
OFF
)
Figure 10. OFF Isolation (O
ISO
)
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Product Folder Link(s): TS3USB221A
1D
2D
50 W
50 W
VOUT1 VIN
Channel ON: 1D to D
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
50 W
VCC
GND
VOUT2
Source
Signal
Channel OFF: 2D to D
Network Analyzer
VCTRL
+
VCTRL = VCC or GND
S
VCC
GND
1D
VCTRL
2D
D
50 W
50 W
VOUT1
VIN
Channel ON: 1D to D
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
Network Analyzer
Source
Signal
+
VCTRL = VCC or GND
S
400 mV
TS3USB221A
www.ti.com
.......................................................................................................................................................................................... SCDS277 – NOVEMBER 2008
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 11. Crosstalk (X
TALK
)
Figure 12. Bandwidth (BW)
Figure 13. Propagation Delay
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Link(s): TS3USB221A
800mV
800mV
400mV
400mV
50% 50%
50%
50%
50%
50%50%
50%
50%
OUTPUTSKEWtSK(P)
PULSESKEWtSK(P)
t = t t
SK(P) PHL PLH
| – |
t = t t
SK(O) PLH1 PLH2
| – | or | – |t t
PHL1 PHL2
Input
Input
Output
Output2
Output1
VOL
VOL
VOL
VOH
VOH
VOH
tPLH
tSK(O) tSK(O)
tPHL2
tPLH2
tPLH1 tPHL1
tPHL
VCC
IIN
ron +VIN *VOUT2 or VOUT1
IIN
W
GND
Channel ON
1D
VCTRL
2D
DVIN
VCTRL = VIH or VIL
VOUT2
VOUT1
+
+S
TS3USB221A
SCDS277 – NOVEMBER 2008 ..........................................................................................................................................................................................
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 14. Skew Test
Figure 15. ON-State Resistance (r
on
)
10 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TS3USB221A
Channel OFF
OFF-State Leakage Current
VCTRL = VIH or VIL
VCC
GND
1D
VCTRL
2D DVIN
VOUT2
VOUT1
+
+
+
S
VCC
GND
VBIAS VCTRL
VCTRL = VCC or GND
VBIAS = VCC or GND
Capacitance is measured at 1D,
2D, D, and S inputs during ON
and OFF conditions.
Capacitance
Meter
VIN
VOUT2
VOUT1
D
2D
1D
S
TS3USB221A
www.ti.com
.......................................................................................................................................................................................... SCDS277 – NOVEMBER 2008
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 16. OFF-State Leakage Current
Figure 17. Capacitance
Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Link(s): TS3USB221A
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
TS3USB221ARSER ACTIVE UQFN RSE 10 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS3USB221ARSERG4 ACTIVE UQFN RSE 10 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 16-Apr-2010
Addendum-Page 1
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TS3USB221ARSER UQFN RSE 10 3000 180.0 8.4 1.68 2.13 0.76 4.0 8.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 28-Mar-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TS3USB221ARSER UQFN RSE 10 3000 202.0 201.0 28.0
PACKAGE MATERIALS INFORMATION
www.ti.com 28-Mar-2012
Pack Materials-Page 2
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