Preliminary Technical Information IXFL132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = 500V 63A 43m 250ns ISOPLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 63 A IDM TC = 25C, Pulse Width Limited by TJM 330 A IA EAS TC = 25C TC = 25C 66 3 A J dv/dt IS IDM, VDD VDSS, TJ 150C 35 V/ns PD TC = 25C 520 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 40..120 / 9..27 N/lb. 2500 3000 V~ V~ 8 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Weight G D Isolated Tab S G = Gate S = Source D = Drain Features Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V~ Electrical Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) Applications V 5.0 V 200 nA TJ = 125C VGS = 10V, ID = 66A, Note 1 (c) 2013 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings 50 A 6 mA 43 m DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100409A(11/13) IXFL132N50P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 68 VDS = 10V, ID = 66A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf Qgs 115 S 18.6 nF 1750 pF 5.0 pF 1.0 44 ns 9 ns 72 ns 8 ns 250 nC VGS = 10V, VDS = 0.5 * VDSS, ID = 66A RG = 1 (External) Qg(on) ISOPLUS264 (IXFL) OUTLINE VGS = 10V, VDS = 0.5 * VDSS, ID = 66A Qgd 90 nC 52 nC RthJC 1 = Gate 2,4 = Drain 3 = Source 0.24C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 132 A ISM Repetitive, Pulse Width Limited by TJM 530 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr QRM IRM Note IF = 66A, -di/dt = 100A/s 1.9 16.4 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL132N50P3 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 140 250 VGS = 10V 8V 120 VGS = 10V 8V 200 7V 7V ID - Amperes ID - Amperes 100 80 6V 60 150 100 40 6V 50 20 5V 5V 0 0 0 1 2 3 4 5 0 6 5 10 20 25 Fig. 4. RDS(on) Normalized to ID = 66A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 140 3.2 VGS = 10V 8V 7V VGS = 10V 2.8 R DS(on) - Normalized 120 100 ID - Amperes 15 VDS - Volts VDS - Volts 6V 80 60 40 2.4 I D = 132A 2.0 I D = 66A 1.6 1.2 5V 20 0.8 4V 0 0.4 0 2 4 6 8 10 12 14 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 66A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.0 125 150 125 150 70 VGS = 10V TJ = 125C 2.6 60 50 2.2 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 1.8 40 30 1.4 20 TJ = 25C 1.0 10 0.6 0 0 50 100 150 ID - Amperes (c) 2013 IXYS CORPORATION, All Rights Reserved 200 250 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFL132N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 200 200 180 180 TJ = - 40C 160 160 TJ = 125C 25C - 40C 120 25C 140 g f s - Siemens ID - Amperes 140 100 80 120 125C 100 80 60 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 20 40 VGS - Volts 80 100 120 140 160 180 200 220 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 350 10 VDS = 250V 9 300 I D = 66A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 60 200 150 TJ = 125C 100 6 5 4 3 2 TJ = 25C 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 50 VSD - Volts 100 150 200 250 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1000 Ciss RDS(on) Limit 100 1,000 100s ID - Amperes Capacitance - PicoFarads 10,000 Coss 100 10 10 TJ = 150C Crss TC = 25C Single Pulse f = 1 MHz 1 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFL132N50P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaa 0.4 Z(th)JC - C / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: F_132N50P3(K9)03-17-11