SAMSUNG ELECTRONICS INC BYE D MM 7964342 0012299 T77 MSMGK IRF9Z34/Z35 P-CHANNEL FEATURES 10-220 Lower Ros (on) Improved inductive ruggedness * Fast switching times Rugged polysilicon gate cell structure Lower input capacitance * Extended safe operating area * Improved high temperature reliability IRF9234/Z35 IRF9Z30/232 PRODUCT SUMMARY Part Number Vos Ros(on) lo IRF9Z30 ~-50V 0140 -18A IRF9Z34 60V 0140 18A IRF9Z32 50V 0.210 -15A {RF9Z35 60V 0210 15A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRF9Z30 | IRF9Z32 | IRF9Z34 | IRF9Z35 Unit Drain-Source Voltage (1) Voss -50 60V Vde Drain-Gate Voitage (Res=1.0M2Q)(1} Vocer -50 60V Vde Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25C 'p -18 -15 -18 -15 Adc Continuous Drain Current Tc=100C lp -11 -9.3 -60 -50 Adc Drain CurrentPulsed (3) Ibm -60 -50 | -60 -50 Adc Gate CurrentPulsed lam +1.5 Adc Single Avalanche Energy (4) Eas 13 mj Avalanche Current las -18 A Total Power Dissipation at Tc =25C Pp 74 Watts Derate above 25C 0.59 w/c Operating and Storage _ Junction Temperature Range Ty, Tstg 56 to 150 c Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5 seconds Th 300 c Notes: (1} Ty=25C to 150C (2) Pulse test Pulse width<300us, Duty Cycle<2% (3) Repetitive rating Pulse with limited by max. junction temperature (4) L=100uH, Vaa=~25V, Rg=25N, Starting T3=25C ELECTRONICSSAMSUNG ELECTRONICS INC BYE D MM 7964142 0012300 519 MESNGK IRF9Z34/Z35 P-CHANNEL IRF9Z30/Z32 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min | Typ | Max (Units Test Conditions : BVpss | Drain-Source IRF9234/Z235| -60| _ Vo | Ves=OV, Ip=-250uA Breakdown Voltage IRF9Z30/Z32|-50| _~ Vv Vesin) | Gate Threshold Voltage -26) | -40]| V | Vos=Ves, Ipb=250pA less | Gate-Source Leakage Forward | -100] nA | Ves=-20V Igss_ | Gate-Source Leakage Reverse - _ 100 | nA | Ves=20V Ioss_| Zero Gate Voltage Drain Current _ _ 250 | vA | Vps=Max Rating, Vas=OV - j; 1000 Vps=0 8Max Rating, TC=125C On-State Drain- IRF9Z30/234;-18) - A |Vos<-3 7V Dien) _| Source Current (2) IRF9Z32/Z35}-15) | Ves= 10V A Static Drain-Source IRF9Z30/Z34| |010/ 014 Q | Veg=-10V, Ip=-9 3A DS(on! | On-State Resistance IRF9Z32/Z35; | | 021 Os Forward Transconductance (2) 31/73 _ UD | Vos=2XVes, lo=-9 3A } . t Cg | Input Capacitance 41196) pF | Vas=OV ! Coss | Output Capacitance | 444 pF | Vos=-25V Crss_| Reverse Transfer Capacitance | 232 _ pF | f=1 OMHz t Turn-On Delay Time | 12 18 ns ater) y Vpp=- 25 V, Ip=18A Re=132 tr Rise Time |}110} 170 | ns | Rp=1.30 tao) | Turn-Off Delay Time | 21 32 ns | (MOSFET switching times are essentially , independent of operating temperature) tt Fall Time | 64 96 ns Total Gate Charge | 26 39 iC Qs (Gate-Source Plus Gate-Drain) q Ves=-10V, Ilp=18A, Vps=0.8Max Rating Qgs_ | Gate-Source Charge ~ 169 10 nc (Gate charge ts essentially independent of b operating temperature } Qga_ | Gate-Drain (Milter) Charge 197 15 nc THERMAL RESISTANCE Rihuc Junction-to-Case MAX 64 K/W Rincs Case-to-Sink TYP 1.0 K/W_ | Mounting surface flat Smooth, and greased Rina Junction-to-Ambient MAX 80 K/W_ | Free Air Operation Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating Pulse width limited by max junction temperature ELECTRONICSSAMSUNG ELECTRONICS INC IRF9Z34/Z35 IRF9Z30/Z32 BYE D MM 75964142 0012301 455 MESMGK P-CHANNEL POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS 7 | Symbol Characteristic Min | Typ | Max | Units Test Conditions Is Continuous Source IRF9Z34/30| ~ | -18 A Modified MOSFET Current (Body Diode) IRF9Z35/32; | | -15 integral reverse o Ism | Pulse Source Current IRF9zZ34/30| | | -60| a | P-Niunction rectier a) ! (3) IRF9Z35/32} | | -650 s oo - =e - pos ree a 4 | Vso | Diode Forward Voltage _ [7 |-6 3 |v To=25C. Ils= 18A, Ves=OV ; ter Reverse Recovery Time | | 250 |] ns T,=25C, lr=18A, die/dt=100A/uS Notes: (1) Tj=25C to 150C (2) Pulse test Pulse width<300us, Duty Cycle<2% (3) Repetitive rating Pulse with limited by max junction temperature 80yus PULSE NEGATIVE Ip DRAIN CURRENT (AMPERES) NEGATIVE Vos DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics 80ys PULSE NEGATIVE Ip DRAIN CURRENT (AMPERES) Typical Saturation Characteristics NEGATIVE Ip DRAIN CURRENT (AMPERES) NEGATIVE tg ORAIN CURRENT (AMPERES) NEGATIVE Vas GATE =TO-SOURCE VOLTAGE (VOLTS} Typical Transfer Characteristics LIMITED BY Q a Te=25C T,=150C | LSINGLE 1 Maximum Safe Operating Area a ELECTRONICS 266SAMSUNG ELECTRONICS INC IRF9Z34/Z35 IRF9Z30/Z32 ZinscoyRinsc, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 107 2 t1 SQUARE W. (THERMAL RESPONSE) BYE D MM 7564142 0012302 3451 MSMGK P-CHANNEL POWER MOSFETS at _ 1 Duty Factor O~'. t 2 Per Unit Base=Fyc=1 67 Deg CW. Ss 5 AVE PULSE DURATION (SECONDS) 2 1 Maximum Effective Transient Thermal Impedance Junction-to-Case Vs. Pulse Duration gts, TRANSCONDUCTANCE {SIEMENS} NEGATIVE Ip, DRAIN CURRENT (AMPERES) Typical Transcounductance Vs. Drain Current (NORMALIZED) BVoss. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 40 = Ty, JUNCTION TEMPERATURE (C) Breakdown Voitage Vs. Temperature 1 NEGATIVE Vos GATE =10-SOURCE VOLTAGE (VOLTS) 20 NEGATIVE Vsp SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical SourceDrain Diode Forward Voltage Rosion, DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Ty, JUNCTION TEMPERATURE (C) ized On-Resi Vs. T an ELECTRONICS 267SAMSUNG ELECTRONICS INC LYE D MM 7964142 0012303 228 MSMGK IRF9Z34/Z35 P-CHANNEL IRF9Z30/Z32 POWER MOSFETS 2500 Vos =0V f=1MHz 1 Ciss=Cgst+Cgd | 2000 Crss=Cgd gd Coss=Cgs+ Cas Ca Cgs+Cod =Cds+Cgd a o 3 1000 C, CAPACITANCE (pF) Vos, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 20 30 40 50 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs. Gate-To-Source Voltage 80ys PULSE Ros on) DRAIN-TO-SOURCE ON RESISTANCE {OHMS) ip, DRAIN CURRENT (AMPERES) lp, DRAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (C) Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature Pp, POWER DISSIPATION (WATTS) 1 Tc, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve a ELECTRONICS