5–1
FEATURES
• High Current Transfer Ratios
SFH601-1, 40 to 80%
SFH601-2, 63 to 125%
SFH601-3 ,100 to 200%
SFH601-4, 160 to 320%
• Isolation Test Voltage (1 Sec.), 5300 VAC
RMS
• VCEsat 0.25 (
≤
0.4) V, IF=10 mA, IC=2.5 mA
• Built to conform to VDE Requirements
• Highest Quality Premium Device
• Long Term Stability
• Storage Temperature, –55
∞
to +150
∞
C
• Underwriters Lab File #E52744
• CECC Approved
• VDE 0884 Available with Option 1
DESCRIPTION
The SFH601 is an optocoupler with a Gallium Ars-
enide LED emitter which is optically coupled with a
silicon planar phototransistor detector. The compo-
nent is packeged in a plastic plug-in case 20 AB
DIN 41866.
The coupler transmits signals between two electri-
cally isolated circuits.
Maximum Ratings
Emitter
Reverse Voltage................................................. 6 V
DC Forward Current......................................60 mA
Surge Forward Current (t
p
=10
µ
s)..................2.5 A
Total Power Dissipation.............................. 100 mW
Detector
Collector-Emitter Voltage .............................. 100 V
Emitter-Base Voltage ......................................... 7 V
Collector Current...........................................50 mA
Collector Current (t=1 ms)..........................100 mA
Power Dissipation...................................... 150 mW
Package
Isolation Test Voltage (between emitter and
detector referred to climate DIN 40046,
part 2, Nov. 74) (t=1 sec.)..............5300 VAC
RMS
Creepage
........................................................... ≥
7 mm
Clearance
.......................................................... ≥
7 mm
Isolation Thickness between Emitter and
Detector
.......................................................≥
0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE0303, part 1........................175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C
................................... ≥
10
12
Ω
V
IO
=500 V, T
A
=100
°
C
................................. ≥
10
11
Ω
Storage Temperature Range........ –55
°
C to +150
°
C
Ambient Temperature Range....... –55
°
C to +100
°
C
Junction Temperature....................................100
°
C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm) ..........260
°
C
V
DE
Characteristics
(T
A
=25
°
C)
*TRIOS
—
TR
ansparent
IO
n
S
hield
Symbol Unit Condition
Emitter
Forward Voltage V
F
1.25
(
≤
1.65) VI
F
=60 mA
Breakdown Voltage V
BR
≥
6VI
R
=10
µ
A
Reverse Current I
R
0.01 (
≤
10)
µ
AV
R
=6 V
Capacitance C
O
25 pF V
F
=0 V, f=1 MHz
Thermal Resistance R
THJamb
750
°
C/W
Detector
Capacitance
Collector-Emitter
Collector-Base
Emitter-Base
C
CE
C
CB
C
EB
6.8
8.5
11
pF f=1 MHz
V
CE
=5 V
V
CB
=5 V
V
EB
=5 V
Thermal Resistance R
THJamb
500
°
C/W
Package
Saturation Voltage,
Collector-Emitter V
CEsat
0.25 (
≤
0.4) V I
F
=10 mA,
I
C
=2.5 mA
Coupling Capacitance C
IO
0.6 pF V
I-O
=0, f=1 MHz
Dimensions in inches (mm)
.010 (.25)
.014 (.35)
.110 (2.79
)
.150 (3.81
)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.
248 (6.30)
.
256 (6.50)
.335 (8.50)
.343 (8.70)
Pin One ID
6
5
4
12
3
18° typ.
.300 (7.62)
.347 (8.82)
4°
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
SFH601 SERIES
TRIOS
* PHOTOTRANSISTOR
OPTOCOUPLER
This document was created with FrameMaker 4.0.4
5–2
SFH601
Current Transfer Ratio and Collector-Emitter Leakage Current
by dash number
Figure 1. Linear operation
(without saturation)
I
F
=10 mA, V
CC
=5 V, T
A
=25
°
C , Typical
Figure 2. Switching operation
(with saturation)
Typical
-0 -1 -2 -3 Unit
I
C
/I
F
at V
CE
=5 V
(I
F
=10 mA) 40-80 63-
125 100-
200 160-
320 %
I
C
/I
F
at V
CE
=5 V
(I
F
=1 mA) 30
(
>
13) 45
(
>
22) 70
(
>
34) 90
(
>
56) %
Collector-Emitter
Leakage Current
(V
CE
=10 V)
(I
CEO
)
2 (
≤
50) 2 (
≤
50) 5 (
≤
100) 5 (
≤
100) nA
Load Resistance R
L
75
Ω
Turn-On Time t
ON
3.0
µ
s
Rise Time t
R
2.0
µ
s
Turn-Off Time t
OFF
2.3
µ
s
Fall Time t
f
2.0
µ
s
Cut-off Frequency F
CO
250 kHz
-1
(I
F
=20 mA) -2 and -3
(I
F
=10 mA) -4
(I
F
=5 mA)
Turn-On Time t
ON
3.0 4.2 6.0
µ
s
Rise Time t
R
2.0 3.0 4.6
µ
s
Turn-Off Time t
OFF
18 23 25
µ
s
Fall Time t
F
11 14 15
µ
s
V
CE-
SAT
0.25 (
≤
0.4) V
RL=75 Ω
VCC=5
V
IC
47 Ω
IF
IF1 KΩVCC=5
V
47 Ω
Figure 3. Current transfer ratio ver-
sus diode current
(T
A=–25°C, VCE=5 V) IC/IF=f (IF)
Figure 4. Current transfer ratio ver-
sus diode current (TA=0°C, VCE=5 V)
IC/IF=f (IF)
Figure 5. Current transfer ratio ver-
sus diode current (TA=25°C, VCE=5
V)IC/IF=f (IF)
5–3 SFH601
Figure 6. Current transfer ratio versus
diode current (TA=50°C) VCE=5 V,
IC/IF=f (IF)
Figure 7. Current transfer ratio versus
diode current (TA=75°C, VCE=5 V)
IC/IF=f (IF)
Figure 8. Current transfer ratio versus
temperature (IF=10 mA, VCE=5 V)
IC/IF=f(T)
Figure 9. Transistor characteristics
(HFE =550) IC=f(VCE) (TA=25°C, IF=0)
Figure 10. Output characteristics
IC=f(VCE)(TA=25°C)
Figure 11. Forward voltage VF=f (IF)
Figure 12. Collector emitter off-state
current ICEO=f (V, T) (TA=25°C, IF=0)
Figure 13. Saturation voltage versus
collector current and modulation
depthSFH601-1 VCEsat=f (IC) (TA=25°C)
Figure 14. Saturation voltage versus
collector current and modulation
depthSFH601-2 VCEsat=f (IC) (TA=25°C)
5–4 SFH601
Figure 15. Saturation voltage versus
collector current and modulation
depth SFH601-3 VCEsat=f (IC) (TA=25°C)
Figure 16. Saturation voltage versus
collector current and modulation
depth SFH601-4 VCEsat=f (IC) (TA=25°C)
Figure 17. Permissible pulse load
D=parameter , TA=25°C, IF=f (tp)
Figure 18. Permissible power dissi-
pation for transistor and diode
Ptot=f (TA)
Figure 19. Permissible forward cur-
rent diode Ptot=f (TA)
Figure 20. Transistor capacitance
C=f(VO) (TA=25°C, f=1 MHz)
