Semiconductor Group 309/96
BUZ 307
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS
≥
2 * ID * RDS(on)max, ID = 1.5 A
gfs 1 1.8 -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 1400 1860
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 85 130
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 30 45
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Ω
td(on)
- 20 30
ns
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Ω
tr
- 60 90
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Ω
td(off)
- 80 110
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Ω
tf
- 50 65