BUZ 307 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 307 800 V 3A 3 TO-218 AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Continuous drain current ID Values Unit A 3 TC = 35 C Pulsed drain current IDpuls TC = 25 C 12 Avalanche current,limited by Tjmax IAR 3 Avalanche energy,periodic limited by Tjmax EAR 8 Avalanche energy, single pulse EAS mJ ID = 3 A, VDD = 50 V, RGS = 25 L = 66.6 mH, Tj = 25 C 320 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 W 75 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 1.67 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 C K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group V 55 / 150 / 56 1 09/96 BUZ 307 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 800 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS A VDS = 800 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 800 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) - VGS = 10 V, ID = 1.5 A Semiconductor Group nA 2 2.7 3 09/96 BUZ 307 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 1.5 A Input capacitance 1 pF - 1400 1860 - 85 130 - 30 45 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 1.8 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time - 20 30 - 60 90 - 80 110 - 50 65 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 09/96 BUZ 307 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 12 V 1 1.3 trr ns - 500 - Qrr C - VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 3 - VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 6 A Reverse recovery time ISM TC = 25 C Inverse diode forward voltage A 4 6 - 09/96 BUZ 307 Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) Ptot 80 3.2 W A ID 60 2.4 50 2.0 40 1.6 30 1.2 20 0.8 10 0.4 0 0 0.0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 160 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 2 10 1 A ID C TC TC K/W tp = 670.0ns 10 1 ZthJC 1 s 10 0 V DS /I D 10 s = 100 s 10 -1 (o n) 10 0 R DS D = 0.50 1 ms 0.20 0.10 10 ms 10 -1 0.05 10 -2 DC 0.02 single pulse 0.01 10 -2 0 10 10 1 10 2 V 10 10 -3 -7 10 3 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp 5 09/96 s 10 0 BUZ 307 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 7.0 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 10 Ptot = 75W A l kj i h g 6.0 ID f VGS [V] 5.5 5.0 b 4.5 5.0 d 5.5 e 6.0 f 6.5 g 7.0 d h 7.5 4.5 4.0 3.5 2.5 c 2.0 1.5 4.0 c e 3.0 a i 8.0 j 9.0 k 10.0 l 20.0 RDS (on) 10 15 20 25 30 35 d e 6 5 f 4 g h i j k 3 2 1 a 5 c 8 1.0 0 b 7 b 0.5 0.0 a V VGS [V] = 0 0.0 45 a 4.5 4.0 b 5.0 1.0 c 5.5 d 6.0 e f 6.5 7.0 2.0 3.0 g 7.5 k h i j 8.0 9.0 10.0 20.0 4.0 5.0 VDS A 6.5 A 4.0 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, VDS2 x ID x RDS(on)max VDS2 x ID x RDS(on)max 5.0 3.0 A ID S 4.0 gfs 3.5 2.0 3.0 2.5 1.5 2.0 1.0 1.5 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID 6 09/96 BUZ 307 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 1.5 A, VGS = 10 V 14 4.6 V 12 4.0 VGS(th) RDS (on) 11 10 98% 3.6 typ 3.2 9 2.8 8 2.4 7 2% 2.0 6 98% typ 5 1.6 4 1.2 3 0.8 2 0.4 1 0 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 C Typ. capacitances 160 Tj Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C Ciss 10 0 10 1 10 -1 10 0 Coss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Crss 10 -2 0 5 10 15 20 25 30 V Tj = 150 C (98%) 40 VDS Semiconductor Group 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 09/96 3.0 BUZ 307 Avalanche energy EAS = (Tj) parameter: ID = 3 A, VDD = 50 V RGS = 25 , L = 66.6 mH Typ. gate charge VGS = (QGate) parameter: ID puls = 5 A 340 16 mJ V EAS 280 VGS 12 240 10 0,2 VDS max 200 8 160 6 120 80 4 40 2 0 20 0,8 VDS max 40 60 80 100 120 C 160 Tj 0 0 10 20 30 40 50 nC QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 960 V 920 V(BR)DSS 900 880 860 840 820 800 780 760 740 720 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 09/96 70 BUZ 307 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 09/96