1N5338B~1N5369B Zener diode Features 1. Low profile package 2. Excellent clamping capability 3. Glass passivated junction 4. VZ-tolerance5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25 Parameter Test Conditions Symbol Value Unit PV 5 W Z-current IZ PV/VZ mA Junction temperature Tj 150 Tstg -65~+150 Power dissipation Type Tamb75 Storage temperature range Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Electrical Characteristics Tj=25 Parameter Forward voltage Test Conditions Type IF=1A Symbol VF Min Typ Max Unit 1.2 V Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 1/3 1N5338B~1N5369B Type VZnom 1N5338B 1N5339B 1N5340B 1N5341B 1N5342B 1N5343B 1N5344B 1N5345B 1N5346B 1N5347B 1N5348B 1N5349B 1N5350B 1N5351B 1N5352B 1N5353B 1N5354B 1N5355B 1N5356B 1N5357B 1N5358B 1N5359B 1N5360B 1N5361B 1N5362B 1N5363B 1N5364B 1N5365B 1N5366B 1N5367B 1N5368B 1N5369B V 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 1) 1) IZT mA 240 220 200 200 175 175 150 150 150 125 125 100 100 100 75 75 70 65 65 65 50 50 50 50 50 40 40 30 30 30 25 25 for ZzT ZZK @ IZK=1mA 400 400 300 200 200 200 200 200 150 125 125 125 100 75 75 75 75 75 75 75 75 100 110 120 130 140 150 160 170 190 210 230 1.5 1 1 1 1 1.5 1.5 2 2 2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 3 3 3.5 3.5 4 5 6 8 10 11 14 20 25 27 IR A 1 1 1 1 10 10 10 10 7.5 5 5 2 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 @ VR IR VZ IZM V 1 2 3 3 5.2 5.7 6.2 6.6 6.9 7.6 8.4 9.1 9.9 10.6 11.5 12.2 12.9 13.7 14.4 15.2 16.7 18.2 19 20.6 21.2 22.8 25.1 27.4 29.7 32.7 35.8 38.8 A 14.4 13.4 12.7 12.4 11.5 10.7 10 9.5 9.2 8.6 8 7.5 7 6.7 6.3 6 5.8 5.5 5.3 5.1 4.7 4.4 4.3 4.1 3.9 3.7 3.5 3.3 3.1 2.8 2.7 2.5 V 0.39 0.25 0.19 0.1 0.15 0.15 0.2 0.2 0.22 0.22 0.25 0.25 0.25 0.25 0.25 0.3 0.35 0.4 0.4 0.4 0.45 0.55 0.55 0.6 0.6 0.6 0.6 0.65 0.65 0.7 0.8 0.9 mA 930 865 790 765 700 630 580 545 520 475 430 395 365 340 315 295 280 265 250 237 216 198 190 176 170 158 144 132 122 110 100 93 2) 3) 4) Zener voltage (Vz): Based on DC-measurement at thermal equilibrium while maintaining the lead temperature (TL) at 25, 9.5mm (3/8") from the diode body. 2) Surge current (IR) is specified as the maximum allowable peak, non-recurrent square-wave current with a plus width, PW, of 8.3 ms. 3) Voltage regulation (VZ): Test conditions for voltage regulation are as below, Vz measurements are made at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test current time duration for each Vz measurements is 4010 ms. (TA=25 +8, -2) 4) Maximum regulator current (IZM): The maximum current shown is based on the maximum voltage of a 5% type unit; therefore, it applies only to the B-suffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual Vz of the device. TL=75 at 9.5mm (3/8") from the diode body. Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 2/3 1N5338B~1N5369B Dimensions in mm DIMENSIONS INCHES MM DIM MIN MAX MIN MAX A 1.000 --- 25.40 --- B 0.230 0.300 5.80 7.60 C 0.026 0.034 0.70 0.90 D 0.104 0.140 2.60 3.60 Cathode identification Case: molded plastic DO-15 Polarity: cathode band Marking: type number 1N5339B Marking Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 3/3