2001-05-16
Page 1
Preliminary data SPD30N03S2L-10
OptiMOS =
==
=Power-Transistor Product Summary
VDS 30 V
RDS
(
on
)
10.4 mΩ
ID30 A
Feature
• N-Channel
• Logic Level
• Low on-resistance RDS
(
on
)
• Excellent Gate Charge x RDS
(
on
)
product (FOM)
•=Superior thermal resistance
•=175°C operating temperature
• Avalanche rated
• dv/dt rated
•=Ideal for fast switching applications
P-TO252
Marking
2N03L10
Type Package Ordering Code
SPD30N03S2L-10 P-TO252 Q67042-S4030
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C,1)
TC=100°C
ID
30
30
A
Pulsed drain current
TC=25°C
ID puls 120
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25Ω
EAS 150 mJ
Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
dv/dt6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TC=25°C
Ptot 82 W
Operating and storage temperature T
j
, Tst
g
-55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
2001-05-16
Page 2
Preliminary data SPD30N03S2L-10
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 1.8 K/W
Thermal resistance, junction - ambient, leaded RthJ
A
- - 100
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
-
-
75
50
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
V(BR)DSS 30 - - V
Gate threshold voltage, VGS = VDS
ID=50µA
VGS(th) 1.2 1.6 2
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
IDSS
-
-
0.01
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS - 1 100 nA
Drain-source on-state resistance
VGS=4.5V, ID=30A
RDS(on) - 11.3 14.7 mΩ
Drain-source on-state resistance
VGS=10V, ID=30A
RDS(on) - 7.8 10.4
1Current limited by bondwire; with a RthJC = 1.8 K/W the chip is able to carry ID = 64A
and calculated with max. source pin temperature of 85°C.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2001-05-16
Page 3
Preliminary data SPD30N03S2L-10
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max ,
ID=30A
23.8 47.5 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 1170 1460 pF
Output capacitance Coss - 490 610
Reverse transfer capacitance Crss - 125 155
Turn-on delay time td
(
on
)
VDD=15V, VGS=10V,
ID=30A, RG=5.6Ω
- 6.1 9.2 ns
Rise time tr- 18 27
Turn-off delay time td
(
off
)
- 27 41
Fall time tf- 17 26
Gate Charge Characteristics
Gate to source charge Q
g
sVDD=24V, ID=30A - 3.4 4.3 nC
Gate to drain charge Q
d- 10.8 16.2
Gate charge total QgVDD=24V, ID=30A,
VGS=0 to 10V
- 31.5 39.4
Gate plateau voltage V
(p
lateau
)
VDD=24V, ID=30A - 3.4 - V
Reverse Diode
Inverse diode continuous
forward current
ISTC=25°C - - 30 A
Inverse diode direct current,
pulsed
ISM - - 120
Inverse diode forward voltage VSD VGS=0V, IF=30A - 0.9 1.2 V
Reverse recovery time trr VR=-V, IF=lS,
diF/dt=100A/µs
- 25.5 38 ns
Reverse recovery charge Qrr - 26.5 40 nC
2001-05-16
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Preliminary data SPD30N03S2L-10
1 Power dissipation
Ptot = f (TC)
0 20 40 60 80 100 120 140 160 °C 190
TC
0
10
20
30
40
50
60
70
80
W
100 SPD30N03S2L-10
Ptot
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
0 20 40 60 80 100 120 140 160 °C 190
TC
0
4
8
12
16
20
24
A
32 SPD30N03S2L-10
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
10 -1 10 0 10 1 10 2
V
VDS
0
10
1
10
2
10
3
10
A
SPD30N03S2L-10
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
100 µs
10 µs
tp = 7.9µs
4 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPD30N03S2L-10
ZthJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2001-05-16
Page 5
Preliminary data SPD30N03S2L-10
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
0 0.5 1 1.5 2 2.5 3 3.5 4 V5
VDS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
75
SPD30N03S2L-10
ID
VGS [V]
a
a 3.0
b
b 3.5
c
c 4.0
d
d 4.5
e
e 5.0
f
Ptot = 82W
f 5.5
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 10 20 30 40 A60
ID
0
0.004
0.008
0.012
0.016
0.02
0.024
0.028
0.032
Ω
0.038 SPD30N03S2L-10
RDS(on)
VGS [V] =
b
b
3.5
c
c
4.0
d
d
4.5
e
e
5.0
f
f
5.5
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VGS
0
5
10
15
20
25
30
35
40
45
50
A
60
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
0 10 20 30 40 A 60
ID
0
5
10
15
20
25
30
35
40
45
50
S
60
gfs
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Preliminary data SPD30N03S2L-10
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 30 A, VGS = 10 V
-60 -20 20 60 100 140 °C 200
Tj
0
2
4
6
8
10
12
14
16
18
20
22
Ω
26 SPD30N03S2L-10
RDS(on)
typ
98%
10 Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = 50 µA
-60 -20 20 60 100 °C 180
Tj
0
0.5
1
1.5
V
2.5
VGS(th)
min
typ
max
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0 5 10 15 20 V 30
VDS
2
10
3
10
4
10
pF
C
Coss
Crss
Ciss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
, tp = 80 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
0
10
1
10
2
10
3
10
A
SPD30N03S2L-10
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 175 °C typ
Tj = 175 °C (98%)
2001-05-16
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Preliminary data SPD30N03S2L-10
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 30 A , VDD = 25 V, RGS = 25 Ω
25 45 65 85 105 125 145 °C 185
Tj
0
20
40
60
80
100
120
mJ
160
EAS
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 30 A pulsed
0 5 10 15 20 25 30 35 40 nC 50
QGate
0
2
4
6
8
10
12
V
16 SPD30N03S2L-10
VGS
0,8 VDS max
DS max
V
0,2
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
-60 -20 20 60 100 140 °C 200
Tj
27
28
29
30
31
32
33
34
V
36 SPD30N03S2L-10
V(BR)DSS
2001-05-16
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Preliminary data SPD30N03S2L-10
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St.-Martin-Strasse 53,
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© Infineon Technologies AG 1999
All Rights Reserved.
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Further information
Please notice that the part number is BSPD30N03S2L-10, for simplicity the device is referred to by the term
SPD30N03S2L-10 throughout this documentation.