NEC / PNP SILICON TRANSISTOR 2SA952 DESCRIPTION The 2SA952 is designed for use in output stage of portable radio and cassette type tape recorder, genera! purpose applications. PACKAGE DIMENSIONS in millimeters inches} 5.2 MAX. FEATURES High total power dissipation. __ (0.204 MAX.) Py = 600 mw @ High hee and low VceE{sat)- _~ hee (Ic =-100 mA) : 200 TYP. 23 Vee(sat) (-700 mA) : -0.25V = TYP. ne s ABSOLUTE MAXIMUM RATINGS + oo) |Z Maximum Temperatures 7! ~ 22 Storage Temperature ..........--..-- -55 to +150 C | x XS Junction Temperature ............. +150 C Maximum 10) t 2 g Maximum Power Dissipation (Ta=25 C) (08) Pt as ~ Total Power Dissipation ..............+6-- 600 mW | z= Maximum Voltages and Currents (Ta=25 C) 1 2.3 = 3 Vespo Collector to Base Voltage .......... 30 V is Vceo Collector to Emitter Voltage........ -25 V ' 1, EMITTER EIAJ :SC-43B Vepo Emitter to Base Voltage ........... -5.0 V 2,COLLECTOR JEDEC: TO-92 Ic Collector Current.......... 00006. -700 mA 3. BASE [EC + PASS Ig Base Current ..... ccc eee eee eee -150 mA ELECTRICAL CHARACTERISTICS (Ta=25 C). SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS heey DC Current Gain 90 200 400 - Voce =1.0 V, Ip =-100 mA hee2 S OC. Current Gain 50 100 - Vee =1.0 V, I=-700 mA Cob Collector to Base Capacitance 17 40 pF /c85 Wre Vv. lE=0 ft Gain Bandwidth Product 50 160 MHz Vege =-6.0 V, lg =10mA Vee* Base to Emitter Voltage 600 640 700 mV VceE=~-6.0 V, Ica 10 mA VCE(sar)* Collector Saturation Voltage 0.25 0.6 vo l =-700 mA, tg =70 mA VBE (sat) Base Saturation Voltage . 0.95 1.2 Vv I =-700 mA, ig=-70 mA IcBo Collector Cutoff Current 100 nA Vogp=-30 V, Ie =0 leEBO Emitter Cutoff Current 100 nA Veg =5.0 V, Ic =0 *Pulsed= PWS 350 us, duty cycle 52.0 % Classification of heey Rank M L K Range 90 180 135 270 200 400 hee Test Conditions : Voce =-1.0 V, Ic =-100 mA 108NEC 2SA952 TYPICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) TOTAL POWER DISSIPATION vs, AMBIENT TEMPERATURE In free air PyTotal Power DissipationW 0 25 100 1 150 TaAmbient Temperature C 175 COLLECTOR CURRENT vs, COLLECTOR TO EMITTER VOLTAGE 9 7.0 60 -5 ) lo Collectar CurrentmA Q 9. 04 = = = -2.0 Vee Collector to Emitter Voltage-V BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT Ic=10-lg Pulsed Parodi A ee 0.5 1 ot 9 - 0.05 0.02 ~O01 e 9 88 8 8 VBE (sat) Base Saturation VoltageV VCE(sat}~ Collector Saturation VoltageV I 2 3 a mm -1.0 -10 -- 100 ~ 1000 Ic Collector Current mA Voge Collector to Emitter VoltageV iCollector Current mA Ic --Collectar Current mA SAFE OPERATING AREAS COLLECTOR CURRENT vs. (TRANSIENT THERMAL RESISTANCE) COLLECTOR TO EMITTER VOLTAGE ~2000 71 = duty cycleS2 % I = = wo co 3 S 3 _ Oo o- _ _ Vce Collector to Emitter VoltdgeV -1 -1 2 -5 -10 -20 _ Voge Collector to Emitter Voltage V COLLECTOR CURRENT vs, DC CURRENT GAIN vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT Voe=-6.0 V VoE=1.0 Vv 7 Pulsed Pulsed _ c 3 -1 So < - 2 - 6 1 a l a) ud <i ~ ~O.1 -1.0 10 = 100 1000 -0 |l Collector Current mA 0.1 0.4 -05 -0, 10-11 VpeBase to Emitter VoltageV COLLECTOR TO EMITTER VOLTAGE GAIN BANDWIDTH PRODUCT vs. BASE CURRENT vs. EMITTER CURRENT ~10 1000 a?) 0.6 Pulsed Vee = 6.0 V -100 nA Ic= ft Gain Bandwidth Product -MHz 3 Ig~Base Current~mA 1 2 5 10 20 50 \e --Emitter Current mA 100. 1092SA952 EMITTER TO BASE AND COLLECTOR TO BASE CAPACITANCE vs. REVERSE VOLTAGE 8 {=1.0 MHz 30 10 -0.1 -10 - - VepEmitter to Base VoltageV VogColiector to Base VoltageV Cip Emitter to Base Capacitance pF CopCollector to Base Capacitance pF 110 NEC