PD -95050C IRFP2907PbF HEXFET(R) Power MOSFET Typical Applications D l Telecom applications requiring soft start Benefits l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 75V RDS(on) = 4.5m G ID = 209A S Description This Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Max. Units 209 148 840 470 3.1 20 1970 See Fig.12a, 12b, 15, 16 5.0 -55 to + 175 A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.24 --- 0.32 --- 40 C/W 1 08/08/11 IRFP2907PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 75 --- --- 2.0 130 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.085 3.6 --- --- --- --- --- --- 410 92 140 23 190 130 130 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 5.0 LS Internal Source Inductance --- 13 Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- 13000 --- 2100 --- 500 --- 9780 --- 1360 --- 2320 V(BR)DSS V(BR)DSS/TJ IGSS Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 4.5 m VGS = 10V, ID = 125A 4.0 V VDS = 10V, ID = 250A --- S VDS = 25V, ID = 125A 20 VDS = 75V, VGS = 0V A 250 VDS = 60V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 620 ID = 125A 140 nC VDS = 60V 210 VGS = 10V --- VDD = 38V --- ID = 125A ns --- RG = 1.2 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 60V, = 1.0MHz --- VGS = 0V, VDS = 0V to 60V Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 209 showing the A G integral reverse --- --- 840 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 125A, VGS = 0V --- 140 210 ns TJ = 25C, IF = 125A --- 880 1320 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.25mH RG = 25, IAS = 125A. (See Figure 12). ISD 125A, di/dt 260A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. 2 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A. Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. www.irf.com IRFP2907PbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 4.5V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 4.5V 10 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 TJ = 175 C 100 TJ = 25 C 10 V DS = 25V 20s PULSE WIDTH 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 5.0 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 1 4.0 20s PULSE WIDTH TJ = 175 C 10.0 ID = 209A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFP2907PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 16000 Coss = Cds + Cgd Ciss 12000 8000 4000 Coss 20 VGS , Gate-to-Source Voltage (V) 20000 1 16 12 8 4 10 0 100 VDS, Drain-to-Source Voltage (V) 100 200 300 400 500 600 700 ID, Drain-to-Source Current (A) 10000 TJ = 175 C 10 TJ = 25 C 1 0.1 0.0 0 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 FOR TEST CIRCUIT SEE FIGURE 13 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) VDS = 60V VDS = 37V Crss 0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 ID = 125A 3.0 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 100 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 10msec DC 0.1 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFP2907PbF 240 200 ID , Drain Current (A) RD VDS LIMITED BY PACKAGE VGS D.U.T. RG + -VDD 160 10V 120 Pulse Width 1 s Duty Factor 0.1 % 80 Fig 10a. Switching Time Test Circuit 40 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP2907PbF D.U.T RG + - VDD IAS 20V 0.01 tp ID 51A 88A BOTTOM 125A TOP 4000 DRIVER L VDS EAS , Single Pulse Avalanche Energy (mJ) 5000 15V 3000 A 2000 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS 1000 tp 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD VG 4.0 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) , Variace ( V ) 3.5 Charge 3.0 ID = 250A 2.5 2.0 1.5 VGS 1.0 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRFP2907PbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 2000 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 125A 1600 1200 800 400 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRFP2907PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17. For N-channel HEXFET(R) power MOSFETs 8 www.irf.com IRFP2907PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 IN THE AS SEMBLY LINE "H" Note: "P" in as s embly line pos ition indicates "Lead-Free" INTERNAT IONAL RECT IFIER LOGO PART NUMBER IRFPE30 56 135H 57 AS S EMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. IR WORLD HEADQUARTERS:101N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2011 www.irf.com 9