DRC PACKAGE
(TOP VIEW)
1 10
2 9
3 8
4 7
VCC
S
D+
D–
OE
1D+
1D–
2D+
2D–
GND 5 6
RSE PACKAGE
(TOP VIEW)
110
2
9
3
8
4
7
VCC
S
D+
D–
OE
1D+
1D–
2D+
2D–
GND
56
RSE PACKAGE
(BOTTOM VIEW)
1
10
2
9
3
8
4
7
VCC
S
D+
D–
OE
1D+
1D–
2D+
2D–
GND
5
6
TS3USB221
www.ti.com
SCDS220G NOVEMBER 2006REVISED SEPTEMBER 2010
HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH
WITH SINGLE ENABLE
Check for Samples: TS3USB221
1FEATURES
VCC Operation at 2.5 V and 3.3 V
VI/O Accepts Signals up to 5.5 V
1.8-V Compatible Control-Pin Inputs
Low-Power Mode When OE Is Disabled (1 mA)
rON =6Maximum
ΔrON = 0.2 Typical
Cio(on) = 6 pF Maximum
Low Power Consumption (30 mA Maximum)
ESD > 2000-V Human-Body Model (HBM)
High Bandwidth (1.1 GHz Typical)
APPLICATIONS
Routes Signals for USB 1.0, 1.1, and 2.0
Mobile Industry Processor Interface (MIPI)
Signal Routing
DESCRIPTION/
ORDERING INFORMATION
The TS3USB221 is a high-bandwidth switch specially
designed for the switching of high-speed USB 2.0
signals in handset and consumer applications, such
as cell phones, digital cameras, and notebooks with
hubs or controllers with limited USB I/Os. The wide
bandwidth (1.1 GHz) of this switch allows signals to
pass with minimum edge and phase distortion. The
device multiplexes differential outputs from a USB
host device to one of two corresponding outputs. The
switch is bidirectional and offers little or no
attenuation of the high-speed signals at the outputs. It
is designed for low bit-to-bit skew and high
channel-to-channel noise isolation, and is compatible
with various standards, such as high-speed USB 2.0
(480 Mbps).
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Copyright © 2006–2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
D−
D+
1D−
1D+
2D−
2D+
S
OE
A
EN (see Note A)
B
Charge
Pump
VCC
TS3USB221
SCDS220G NOVEMBER 2006REVISED SEPTEMBER 2010
www.ti.com
ORDERING INFORMATION
TAPACKAGE(1) (2) ORDERABLE PART NUMBER TOP-SIDE MARKING(3)
QFN RSE Reel of 3000 TS3USB221RSER L5_
–40°C to 85°C SON DRC Reel of 3000 TS3USB221DRCR ZWG
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(3) RSE: The actual top-side marking has one additional character that designates the assembly/test site.
Table 1. PIN DESCRIPTION
NAME DESCRIPTION
OE Bus-switch enable
S Select input
D Bus A
nD Bus B
Table 2. TRUTH TABLE
S OE FUNCTION
X H Disconnect
L L D = 1D
H L D = 2D
BLOCK DIAGRAM
SIMPLIFIED SCHEMATIC, EACH FET SWITCH (SW)
A. EN is the internal enable signal applied to the switch.
2Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated
Product Folder Link(s): TS3USB221
TS3USB221
www.ti.com
SCDS220G NOVEMBER 2006REVISED SEPTEMBER 2010
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT
VCC Supply voltage range –0.5 4.6 V
VIN Control input voltage range(2) (3) –0.5 7 V
VI/O Switch I/O voltage range(2) (3) (4) –0.5 7 V
IIK Control input clamp current VIN < 0 –50 mA
II/OK I/O port clamp current VI/O < 0 –50 mA
II/O ON-state switch current(5) ±120 mA
Continuous current through VCC or GND ±100 mA
DRC package 48.7
qJA Package thermal impedance(6) °C/W
RSE package 243
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to ground, unless otherwise specified.
(3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(4) VIand VOare used to denote specific conditions for VI/O.
(5) IIand IOare used to denote specific conditions for II/O.
(6) The package thermal impedance is calculated in accordance with JESD 51-7.
RECOMMENDED OPERATING CONDITIONS(1)
MIN MAX UNIT
VCC Supply voltage 2.3 3.6 V
VCC = 2.3 V to 2.7 V 0.46 × VCC 5.5
VIH High-level control input voltage V
VCC = 2.7 V to 3.6 V 0.46 × VCC 5.5
VCC = 2.3 V to 2.7 V 0 0.25 × VCC
VIL Low-level control input voltage V
VCC = 2.7 V to 3.6 V 0 0.25 × VCC
VI/O Data input/output voltage 0 5.5 V
TAOperating free-air temperature –40 85 °C
(1) All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s): TS3USB221
TS3USB221
SCDS220G NOVEMBER 2006REVISED SEPTEMBER 2010
www.ti.com
ELECTRICAL CHARACTERISTICS(1)
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(2) MAX UNIT
VIK VCC = 3.6 V, 2.7 V, II= –18 mA –1.8 V
Control
IIN VCC = 3.6 V, 2.7 V, 0 V, VIN = 0 V to 3.6 V ±1 mA
inputs VCC = 3.6 V, 2.7 V, VIN = VCC or GND,
IOZ (3) ±1 mA
VO= 0 V to 3.6 V, VI= 0 V, Switch OFF
VI/O = 0 V to 3.6 V ±2
I(OFF) VCC = 0 V mA
VI/O = 0 V to 2.7 V ±1
VCC = 3.6 V, 2.7 V, II/O = 0 V,
ICC 30 mA
VIN = VCC or GND, Switch ON or OFF
ICC VCC = 3.6 V, 2.7 V, Switch disabled
(low power 1 mA
VIN = VCC or GND (OE in high state)
mode) VCC = 3.6 V 20
ΔICC Control One input at 1.8 V, mA
(4) inputs Other inputs at VCC or GND VCC = 2.7 V 0.5
Control
Cin VCC = 3.3 V, 2.5 V, VIN = 3.3 V or 0 V 1 2 pF
inputs
Cio(OFF) VCC = 3.3 V, 2.5 V, VI/O = 3.3 V or 0 V, Switch OFF 3 4 pF
Cio(ON) VCC = 3.3 V, 2.5 V, VI/O = 3.3 V or 0 V, Switch ON 5 6 pF
VI= 0 V, IO= 30 mA 6
ron (5) VCC = 3 V, 2.3 V
VI= 2.4 V, IO= –15 mA 6
VI= 0 V, IO= 30 mA 0.2
Δron VCC = 3 V, 2.3 V
VI= 1.7, IO= –15 mA 0.2
VI= 0 V, IO= 30 mA 1
ron(flat) VCC = 3 V, 2.3 V
VI= 1.7, IO= –15 mA 1
(1) VIN and IIN refer to control inputs. VI, VO, II, and IOrefer to data pins.
(2) All typical values are at VCC = 3.3 V (unless otherwise noted), TA= 25°C.
(3) For I/O ports, the parameter IOZ includes the input leakage current.
(4) This is the increase in supply current for each input that is at the specified TTL voltage level, rather than VCC or GND.
(5) Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is
determined by the lower of the voltages of the two (A or B) terminals.
DYNAMIC ELECTRICAL CHARACTERISTICS
over operating range, TA= –40°C to 85°C, VCC = 3.3 V ± 10%, GND = 0 V
PARAMETER TEST CONDITIONS TYP(1) UNIT
XTALK Crosstalk RL= 50 , f = 250 MHz –40 dB
OIRR OFF isolation RL= 50 , f = 250 MHz –41 dB
BW Bandwidth (–3 dB) RL= 50 1.1 GHz
(1) For Max or Min conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
4Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated
Product Folder Link(s): TS3USB221
TS3USB221
www.ti.com
SCDS220G NOVEMBER 2006REVISED SEPTEMBER 2010
DYNAMIC ELECTRICAL CHARACTERISTICS
over operating range, TA= –40°C to 85°C, VCC = 2.5 V ± 10%, GND = 0 V
PARAMETER TEST CONDITIONS TYP(1) UNIT
XTALK Crosstalk RL= 50 , f = 250 MHz –39 dB
OIRR OFF isolation RL= 50 , f = 250 MHz –40 dB
BW Bandwidth (–3 dB) RL= 50 1.1 GHz
(1) For Max or Min conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
SWITCHING CHARACTERISTICS
over operating range, TA= –40°C to 85°C, VCC = 3.3 V ± 10%, GND = 0 V
PARAMETER MIN TYP(1) MAX UNIT
tpd Propagation delay(2) (3) 0.25 ns
S to D, nD 30
tON Line enable time ns
OE to D, nD 17
S to D, nD 12
tOFF Line disable time ns
OE to D, nD 10
tSK(O) Output skew between center port to any other port(2) 0.1 0.2 ns
tSK(P) Skew between opposite transitions of the same output (tPHL tPLH)(2) 0.1 0.2 ns
(1) For Max or Min conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
(2) Specified by design
(3) The bus switch contributes no propagational delay other than the RC delay of the on resistance of the switch and the load capacitance.
The time constant for the switch alone is of the order of 0.25 ns for 10-pF load. Since this time constant is much smaller than the rise/fall
times of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch, when used in
a system, is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side.
SWITCHING CHARACTERISTICS
over operating range, TA= –40°C to 85°C, VCC = 2.5 V ± 10%, GND = 0 V
PARAMETER MIN TYP(1) MAX UNIT
tpd Propagation delay(2) (3) 0.25 ns
S to D, nD 50
tON Line enable time ns
OE to D, nD 32
S to D, nD 23
tOFF Line disable time ns
OE to D, nD 12
tSK(O) Output skew between center port to any other port(2) 0.1 0.2 ns
tSK(P) Skew between opposite transitions of the same output (tPHL tPLH)(2) 0.1 0.2 ns
(1) For Max or Min conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
(2) Specified by design
(3) The bus switch contributes no propagational delay other than the RC delay of the on resistance of the switch and the load capacitance.
The time constant for the switch alone is of the order of 0.25 ns for 10-pF load. Since this time constant is much smaller than the rise/fall
times of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch, when used in
a system, is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side.
Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Link(s): TS3USB221
–120
–100
–80
–60
–40
–20
0
100.0E+3 1.0E+6 10.0E+6 100.0E+6 1.0E+9 10.0E+9
Frequency (Hz)
Attenuation (dB)
V = 2.5 V
CC
V = 3.3 V
CC
–7
–6
–5
–4
–3
–2
–1
0
100.0E+3 1.0E+6 10.0E+6 100.0E+6 1.0E+9 10.0E+9
Frequency (Hz)
Gain (dB)
V = 2.5 V
CC
V = 3.3 V
CC
–120
–100
–80
–60
–40
–20
0
100.0E+3 1.0E+6 10.0E+6 100.0E+6 1.0E+9 10.0E+9
Frequency (Hz)
Attenuation (dB)
V = 2.5 V
CC
V = 3.3 V
CC
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V (V)
IN
r ( )
on Ω
V = 2.3 V
CC
V = 3.0 V
CC
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V (V)
IN
r ( )
on Ω
V = 2.3 V
CC
V = 3.0 V
CC
TS3USB221
SCDS220G NOVEMBER 2006REVISED SEPTEMBER 2010
www.ti.com
APPLICATION INFORMATION
Figure 1. Gain vs Frequency Figure 2. OFF Isolation vs Frequency
Figure 3. Crosstalk vs Frequency Figure 4. ron vs VIN (IOUT = –15 mA)
Figure 5. ron vs VIN (IOUT = –30 mA)
6Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated
Product Folder Link(s): TS3USB221
Time ( 10 ) (s)X–9
Differential Signal (V)
0.0
–0.5
0.5
–0.4
0.4
–0.3
0.3
–0.2
0.2
–0.1
0.1
0.0
0.2 0.4 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0
TS3USB221
www.ti.com
SCDS220G NOVEMBER 2006REVISED SEPTEMBER 2010
Figure 6. Eye Pattern: 480-Mbps USB Signal With Figure 7. Eye Pattern: 480-Mbps USB Signal With
No Switch (Through Path) Switch NC Path
Figure 8. Eye Pattern: 480-Mbps USB Signal With Switch NO Path
Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Link(s): TS3USB221
CL(2) RL
VIN
VCC
GND
1D or 2D VOUT1 or VOUT2
VCTRL
1D or 2D
D
Logic
Input(1)
V+
VCOM
500
RLCL
50 pFtON
TEST
V+
500 50 pFtOFF
50%
tON tOFF
50%
90% 90%
Logic
Input
(VI)
1.8 V
Switch
Output
(VOUT1 or VOUT2)
0
CL(2) RL
S
(1) All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, ZO = 50 , tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
VOH
VOL
1D
2D D
VOUT1
VIN
Channel OFF: 1D to D
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
50 W
VCC
GND
50 W
50 W
Network Analyzer
Source
Signal
VCTRL
+
VCTRL = VCC or GND
S
TS3USB221
SCDS220G NOVEMBER 2006REVISED SEPTEMBER 2010
www.ti.com
PARAMETER MEASUREMENT INFORMATION
Figure 9. Turn-On (tON) and Turn-Off Time (tOFF)
Figure 10. OFF Isolation (OISO)
8Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated
Product Folder Link(s): TS3USB221
1D
2D
50 W
50 W
VOUT1 VIN
Channel ON: 1D to D
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
50 W
VCC
GND
VOUT2
Source
Signal
Channel OFF: 2D to D
Network Analyzer
VCTRL
+
VCTRL = VCC or GND
S
VCC
GND
1D
VCTRL
2D
D
50 W
50 W
VOUT1
VIN
Channel ON: 1D to D
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
Network Analyzer
Source
Signal
+
VCTRL = VCC or GND
S
400 mV
TS3USB221
www.ti.com
SCDS220G NOVEMBER 2006REVISED SEPTEMBER 2010
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 11. Crosstalk (XTALK)
Figure 12. Bandwidth (BW)
Figure 13. Propagation Delay
Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Link(s): TS3USB221
800mV
800mV
400mV
400mV
50% 50%
50%
50%
50%
50%50%
50%
50%
OUTPUTSKEWtSK(P)
PULSESKEWtSK(P)
t = t t
SK(P) PHL PLH
| |
t = t t
SK(O) PLH1 PLH2
| | or | |t t
PHL1 PHL2
Input
Input
Output
Output2
Output1
VOL
VOL
VOL
VOH
VOH
VOH
tPLH
tSK(O) tSK(O)
tPHL2
tPLH2
tPLH1 tPHL1
tPHL
VCC
IIN
ron +
VIN *VOUT2 or VOUT1
IIN
W
GND
Channel ON
1D
VCTRL
2D
DVIN
VCTRL = VIH or VIL
VOUT2
VOUT1
+
+S
TS3USB221
SCDS220G NOVEMBER 2006REVISED SEPTEMBER 2010
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 14. Skew Test
Figure 15. ON-State Resistance (ron)
10 Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated
Product Folder Link(s): TS3USB221
Channel OFF
OFF-State Leakage Current
VCTRL = VIH or VIL
VCC
GND
1D
VCTRL
2D DVIN
VOUT2
VOUT1
+
+
+
S
VCC
GND
VBIAS VCTRL
VCTRL = VCC or GND
VBIAS = VCC or GND
Capacitance is measured at 1D,
2D, D, and S inputs during ON
and OFF conditions.
Capacitance
Meter
VIN
VOUT2
VOUT1
D
2D
1D
S
TS3USB221
www.ti.com
SCDS220G NOVEMBER 2006REVISED SEPTEMBER 2010
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 16. OFF-State Leakage Current
Figure 17. Capacitance
Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Link(s): TS3USB221
PACKAGE OPTION ADDENDUM
www.ti.com 29-Sep-2010
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
TS3USB221DRCR ACTIVE SON DRC 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Request Free Samples
TS3USB221DRCRG4 ACTIVE SON DRC 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Request Free Samples
TS3USB221RSER ACTIVE UQFN RSE 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Request Free Samples
TS3USB221RSERG4 ACTIVE UQFN RSE 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Request Free Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TS3USB221DRCR SON DRC 10 3000 330.0 12.4 3.3 3.3 1.0 8.0 12.0 Q2
TS3USB221DRCR SON DRC 10 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2
TS3USB221RSER UQFN RSE 10 3000 180.0 8.4 1.68 2.13 0.76 4.0 8.0 Q1
TS3USB221RSER UQFN RSE 10 3000 179.0 8.4 1.75 2.25 0.65 4.0 8.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TS3USB221DRCR SON DRC 10 3000 370.0 355.0 55.0
TS3USB221DRCR SON DRC 10 3000 367.0 367.0 35.0
TS3USB221RSER UQFN RSE 10 3000 202.0 201.0 28.0
TS3USB221RSER UQFN RSE 10 3000 203.0 203.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
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