High-Voltage - High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
•High Collector Emitter Sustaining Voltage –
VCEO(sus) = 140 Vdc
•High DC Current Gain – @ IC = 8.0 Adc
hFE = 15 (Min)
•Low Collector–Emitter Saturation Voltage –
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
140
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
140
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VEB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
7.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Current – Continuous
Peak
ÎÎÎÎÎ
ÎÎÎÎÎ
IC
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
16
20
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Base Current – Continuous
ÎÎÎÎÎ
ÎÎÎÎÎ
IB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25C
Derate above 25C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
PD
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
200
1.14
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎ
ÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
–65 to +200
ÎÎÎ
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
θJC
ÎÎÎÎÎÎ
0.875
ÎÎÎ
C/W
(1) Indicates JEDEC Registered Data.
200
00 20 40 60 80 100 120 140 200
Figure 1. Power Derating
TC, TEMPERATURE (°C)
150
100
50
Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.
PD, POWER DISSIPATION (WATTS)
160 180
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 0 1Publication Order Number:
2N5631/D
2N5631
2N6031
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
NPN
PNP
2N5631 2N6031
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (2)
(IC = 200 mAdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
Î
Î
Î
ÎÎÎ
140
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
–
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Cutoff Current
(VCE = 70 Vdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
ÎÎÎ
Î
Î
Î
ÎÎÎ
–
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
2.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Cutoff Current
(VCE = Rated VCB, VEB(off) = 1.5 Vdc)
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
–
–
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
2.0
7.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Cutoff Current
(VCB = Rated VCB, IE = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICBO
ÎÎÎ
Î
Î
Î
ÎÎÎ
–
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
2.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
ÎÎÎ
Î
Î
Î
ÎÎÎ
–
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
5.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 8 Adc, VCE = 2.0 Vdc)
(IC = 16 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎ
Î
Î
Î
ÎÎÎ
15
4.0
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
60
–
ÎÎÎ
Î
Î
Î
ÎÎÎ
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 16 Adc, IB = 4.0 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
–
–
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
1.0
2.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(sat)
ÎÎÎ
ÎÎÎ
–
ÎÎÎÎ
ÎÎÎÎ
1.8
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
(IC = 8.0 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
Î
Î
Î
ÎÎÎ
–
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.5
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain – Bandwidth Product (3)
(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
fT
ÎÎÎ
Î
Î
Î
ÎÎÎ
1.0
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
–
ÎÎÎ
Î
Î
Î
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance 2N5631
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6031
ÎÎÎÎÎ
ÎÎÎÎÎ
Cob
ÎÎÎ
ÎÎÎ
–
–
ÎÎÎÎ
ÎÎÎÎ
500
1000
ÎÎÎ
ÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain
(IC = 4.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hfe
ÎÎÎ
Î
Î
Î
ÎÎÎ
15
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
–
ÎÎÎ
Î
Î
Î
ÎÎÎ
–
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT = |hfe| • ftest
Figure 2. Switching Times Test Circuit
+11 V
25 µs
0
-9.0 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
3.0
0.2
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)µ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.03 0.3 0.5 0.7 1.0 2.0 3.0 7.0 20
TJ = 25°C
IC/IB = 10
VCE = 30 V
0.07
0.05
5.0 10
tr
td @ VBE(off) = 5.0 V
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
For PNP test circuit, reverse all polarities and D1.
2N5631
2N6031
2N5631 2N6031
http://onsemi.com
3
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.5
0.2
0.1
0.05
0.02
0.05
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.1 0.2 0.5 5.0 10 20 50 100 200 500 20001000
θJC(t) = r(t) θJC
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
0.1
0.02
1.0 2.0
SINGLE PULSE
20
2.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
2.0
0.2 3.0 5.0 7.0 10 20 30 50 200
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
70
1.0
IC, COLLECTOR CURRENT (AMP)
CURVES APPLY BELOW
RATED VCEO
TJ = 200°C
dc
1.0ms
0.7
0.5
0.3
3.0
100
0.5ms
50ms
5.0ms
2N5631, 2N6031
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200C; T C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
200C. TJ(pk) may be calculated from the data in
Figure 4. A t high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
PNP
2N6031
5.0
0.2
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.5 0.3 0.7 1.0 2.0 7.0 10 20
TJ = 25°C
IC/IB = 10
IB1 = IB2
VCE = 30 V
ts
5.0
0.7
0.5 3.0
NPN
2N5631
tf
4.0
0.2
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.2 0.3 0.7 1.0 2.0 7.0 10 20
TJ = 25°C
IB1 = IB2
IC/IB = 10
VCE = 30 V
ts
5.0
0.4
0.5 3.0
tf
0.6
0.3
t, TIME (s)µ
2N5631 2N6031
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4
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
0.2
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
100 5.0 10 20 50 100 2000.5 1.0 2.0
C, CAPACITANCE (pF)
700
500
300
200
TJ = 25°C
Cib
Cob
NPN
2N5631
2000
VR, REVERSE VOLTAGE (VOLTS)
200
C, CAPACITANCE (pF)
700
500
300
TJ = 25°C
PNP
2N6031
1000
Figure 8. DC Current Gain
500
0.2
IC, COLLECTOR CURRENT (AMP)
5.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 20
200
70
30
10
300
100
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
50
20
7.0
10
VCE = 2.0 V
VCE = 10 V
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
Figure 9. Collector Saturation Region
2.0
0.05
IB, BASE CURRENT (AMP)
00.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0
1.2
0.8
0.4
IC = 4.0 A
TJ = 25°C
8.0 A 16 A
1.6
3.0
IB, BASE CURRENT (AMP)
0.2 5.0 10 20 50 100 2000.5 1.0 2.0
Cib
Cob
500
0.2
5.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 20
200
70
30
10
300
100
50
20
7.0
10
TJ = +150°C
+25°C
-55°C
VCE = 2.0 V
VCE = 10 V
2.0
0.05
00.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0
1.2
0.8
0.4
1.6
3.0
IC = 4.0 A 8.0 A 16 A
TJ = 25°C
2N5631 2N6031
http://onsemi.com
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
–T– SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
UL
GB
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
2N5631 2N6031
http://onsemi.com
6
Notes
2N5631 2N6031
http://onsemi.com
7
Notes
2N5631 2N6031
http://onsemi.com
8
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