SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,IN ORDER OF (1) MAX COLLECTOR DISSIPATION TYPE Icbo Cob jSTRUC EO No. @MAX -TURE | s/a_ jAD Vcb TO200/D E 28B219 4 . 30 16ud |1.00 TO5 m . x 28B220 . . 30 1.00 TOS 7m . . : p 2G1024t : 70 : TO5 m . 2$B224 : 45 TOS 26577 : 70 : TO5 am . 25B225 : 45 TO5 28B223 : : 30 : : TO5 2G527t : : 45 : . TO5 fm 2SA86 . : 45 . . . . T044 m : PET8351 : 40 R110 | A 2N509 30 om 0C318 15M [4.5m 20 26271 31M |4.0m 30 2N27 18t 150MSA/3.2m 20 GA52996 100 2SB200A 5.0md |dJ| 45 T1001 26383 26386 28B317 2SA41 ALZ10 2N537 AC142H-K 28B382 : 0% | 27 5.0 2N1287 B1022 25B451 NKT251 NKT262 NKT222S1 NKT231 258421 CP802 26110 : : , 3.0 | 50m | 15 MM2552t 5 , 5.0% | 25 30 ta SYMBOLS AND CODES 42 D.A.T.A. EXPLAINED IN INTERPRETER 42b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)IN ORDER OF (1) fab, (2) MAX RISE TIME & TYPE RISE DELAY} STORE| FALL |IN FREE . | Cob rbb /STRUCTURE/M|MAX.|Y200 {EO No. fab TIME | TIME | TIME | TIME | AIR @ | Vcb . X |P-PNP A}TEMP| s/a AD tr td ts tf 25C Cob |N-NPN T TOQ200 [DE : n u 2# |2SA458 6.0M 1000n 700n 700n 150m : P-A Ge RO107b -4u m . 2N1174 7.00M 1.5ud 250m . . TO29 JAN2N496 7.20M8A | 175n$ 150m ( . : i TO1 u F 280223 8.0M 300n : : 10 Z : i MD25 jA@ 2N826 8.00M 400nt 75m : D u9 2NB16 8.00M 600nt 75m P u 2SC36 9.00MSA | 1000n . ; , RO 26603 9.40M 400n 2SA326 10.0M 85n 2N1607 10.0M$8A | 265ng 2SC85 10.0M 500n 2SA371 10.0M 900n NKT108 10.0M |1000n CK27 11.0M 2N1103 12M 50nd | - . 30 ASZ30 12.0MA | 300n : : 20 v CK4A 12.0M |1400n 400uA| 60 2SA50 14.0M 100nt 100 SFT298 15.0M 100nd . 35 CK28A 17.0M 400nZt 80 . m NKT107 18.0M 500n : : 80 NS9001 20.0MSA | 100nd ! 30 RT731M 20.0M 110nt 80 2$C5110 20M&A| 130nd : 150 25C513R 20MSA| 130nd : : 90 285230 20M54| 130nd 2SC524R 20MSA; 13008 TN304 20.0M | 150n 1776-0440 20MSA] S00ne 2SC 167 20.0M 580n 30 1776-0460 20MSA 60 15 2N3602 20.0M8A |1000n = }300n : 1.0 % {180 330m USAF501ES001M |20.0M ( 20 150 BUY55-4 20M | 2.0ud . 7.0 |8.0 214m u . . m BUY56-4 20M8 | 2.0ud 7.0 Z \8.0 214m 5 5 m BUY72-4 20M8 2. : 7.0% '8.0 214m = . : . m SYMBOLS AND CODES 115 D.A.T.A. EXPLAINED IN INTERPRETER 115