© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 100 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 100 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 75 A
IDM TC= 25°C, Pulse Width Limited by TJM 225 A
IATC= 25°C 75 A
EAS 2.5 J
PDTC= 25°C 400 W
TJ -55 to +150 °C
TJM +150 °C
Tstg -55 to +150 °C
TL1.6mm (0.063in) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6.0 g
TO-268 4.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 100 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V 5 μA
TJ = 125°C 50 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 21 mΩ
LinearL2TM Power
MOSFET w/extended
FBSOA
IXTH75N10L2
IXTT75N10L2
DS100200(9/09)
VDSS = 100V
ID25 = 75A
RDS(on) ≤≤
≤≤
≤ 21mΩΩ
ΩΩ
Ω
Advance Technical Information
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
Features
zDesigned for Linear Operation
zInternational Standard Packages
zAvalanche Rated
zIntegrated Gate Resistor for Easy
Paralleling
zGuaranteed FBSOA at 75°C
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSolid State Circuit Breakers
zSoft Start Controls
zLinear Amplifiers
zProgrammable Loads
zCurrent Regulators
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
TO-268 (IXTT)
G
SD (Tab)
S
G
D (Tab)
D
D
D
D
D
GO
O
S
w
w
RGi
OO
D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH75N10L2
IXTT75N10L2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 35 44 53 S
Ciss 8100 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1280 pF
Crss 350 pF
RGi Integrated Gate Input Resistor 3.0 Ω
td(on) 23 ns
tr 14 ns
td(off) 68 ns
tf 15 ns
Qg(on) 215 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 36 nC
Qgd 80 nC
RthJC 0.31 °C/W
RthCS TO-247 0.21 °C/W
Safe Operating Area Specification
Characteristic Values
Symbol Test Conditions Min. Typ. Max.
SOA VDS = 80V, ID = 3A, TC = 75°C, Tp = 5s 240 W
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 0Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 (IXTT) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 75 A
ISM Repetitive, Pulse Width Limited by TJM 300 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 180 ns
IRM 16.2 A
QRM 1.46 μC
IF = 37.5A, -di/dt = 100A/μs,
VR = 50V, VGS = 0V
© 2009 IXYS CORPORATION, All Rights Reserved
IXTH75N10L2
IXTT75N10L2
Fi g . 1. Ou tpu t C har acter i st i cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
DS
- Volts
I
D
- Ampe res
V
GS
= 20V
14V
12V
10V
4
V
6
V
8
V
Fi g . 2. Exte n d ed Ou tpu t Ch ar acter i s ti cs @ T
J
= 25ºC
0
40
80
120
160
200
240
280
0 5 10 15 20 25
V
DS
- Volts
I
D
- Ampere s
V
GS
= 20V
14V
12V
7
V
6
V
8
V
10
V
5
V
Fig . 3. Ou tpu t C har acteristics @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
V
DS
- Volts
I
D
- Amper es
V
GS
= 20V
14V
12V
10V
4
V
6V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 37.5A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Deg ree s Centigrad e
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 75A
I
D
= 37.5A
Fig. 5. R
DS(on)
Normalized to I
D
= 37.5A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 20 40 60 80 100 120 140 160 180 200 220 240 260
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 6. Maximum D r ai n C u rr en t vs.
Case Temp er atur e
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Ampe res
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH75N10L2
IXTT75N10L2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GS
- Vo lts
I
D
- Am pe res
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
40
80
120
160
200
240
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Vo lts
I
S
- Am pe res
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar ge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 37. 5A
I
G
= 10mA
Fig. 11. Capacitance
0.1
1.0
10.0
100.0
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - NanoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maxi mu m Tran si en t Ther mal I mp ed an ce
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- º C / W
© 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_75N10L2(7R)9-25-09
IXTH75N10L2
IXTT75N10L2
Fi g . 13. F o r war d -B i as Sa fe Op er ati n g Area
@ T
C
= 25ºC
1
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Am peres
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms
Fi g . 14 . F o r war d -B i as Safe O p er ati n g Ar ea
@ T
C
= 75ºC
1
10
100
1,000
1 10 100
V
DS
- Vo lts
I
D
- Am peres
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms
