CMT2N7002E
SMALL SIGNAL MOSFET
2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 1
GENERAL DESCRIPTION
FEATURES
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. This product is particularly suited for low
voltage, low current applications such as small servo motor
control, power MOSFET gate drivers, and other switching
applications.
Low On-Resistance: 3Ω
Low Threshold: 2V (typ.)
Low Input Capacitance: 25pF
Fast Switching Speed: 7.5ns
Low Input and Output Leakage
PIN CONFIGURATION
SYMBOL
SOT-23
Top View
1
3
2
GATE
DRAIN
SOURCE
D
S
G
N-Channel MOSFET
ORDERING INFORMATION
Part Number Package
CMT2N7002E SOT-23
CMT2N7002EG* SOT-23
*Note: G : Suffix for Pb Free Product
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Drain Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS = 1.0MΩ) VDGR 60 V
TA = 25℃ 240
Continuous Drain Current (TJ = 150℃) TA = 70℃ ID 190 mA
Pulsed Drain Current (Note 1) IDM 1300 mA
Gate-to-Source Voltage VGS ±20 V
TA = 25℃ 0.35
Total Power Dissipation TA = 70℃ PD 0.22 W
Operating and Storage Temperature Range TJ, TSTG -55 to 150 ℃
Thermal Resistance － Junction to Ambient θJA 357 ℃/W
Note1: Pulse Width limited by maximum junction temperature.
CMT2N7002E
SMALL SIGNAL MOSFET
2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 2
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT2N7002E
Characteristic Symbol Min Typ Max Units
Drain-Source Breakdown Voltage
(V
GS = 0 V, ID = 10 μA)
V(BR)DSS 60 68 V
Zero Gate Voltage Drain Current
(VDS = 60 V, VGS = 0 V)
(VDS = 60 V, VGS = 0 V, TC = 125℃)
IDSS
1.0
500
μA
μA
Gate Body Leakage (VDS = 0 V, VGS = ±15 V) IGSS ±10 nA
Gate Threshold Voltage *
(V
DS = VGS, ID = 250 μA)
VGS(th) 1.0 2.0 2.5 V
On-State Drain Current (Note 2)
(VDS = 7.5 V, VGS = 10V)
(VDS = 10 V, VGS = 4.5V)
Id(on)
800
350
1900
450
mA
Static Drain-Source On-Resistance (Note 2)
(VGS = 10 V, ID = 0.25A)
(VGS = 4.5 V, ID = 0.2A)
RDS(on)
1.9
3.5
3
4
Ω
Diode Forward On-Voltage (IS = 200 mA, VGS = 0V) VSD 0.85 1.2
V
Forward Transconductance (VDS = 15 V, ID = 200mA) (Note 2) gFS 150 260 mmhos
Total Gate Charge Qg 0.4 0.6 nC
Gate-Source Charge Qgs 0.06 nC
Gate-Drain Charge
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz) (Note 1) Qgd 0.06 nC
Input Capacitance Ciss 21 pF
Output Capacitance Coss 7
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz) (Note 1) Crss 2.5 pF
Turn-On Delay Time (Note 1,3) td(on) 13 20 ns
Turn-Off Delay Time (Note 1,3)
(VDD = 10 V, ID = 250 mA,
VGEN = 10 V, RG = 10Ω, RL = 40Ω) td(off) 18 25
ns
Note 1: For Design Aid Only, not subject to production testing.
Note 2: Pulse test: PW <= 300µs duty cycle <=2%
Note 3: Switching time is essentially independent of operating temperature.
CMT2N7002E
SMALL SIGNAL MOSFET
2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 3
TYPICAL ELECTRICAL CHARACTERISTICS
CMT2N7002E
SMALL SIGNAL MOSFET
2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 4
CMT2N7002E
SMALL SIGNAL MOSFET
2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 5
PACKAGE DIMENSION
SOT-23
E1
L
c1
D
E
A
A2
A1
b
b1
c
θ
θ2
θ1
e1
e
L1
D
E
E1
e
e1
b
A2
A
θ2
θ1
A1
b1
b
c
c1
Base Metal
With Plating
Section B-B
See Section B-B L1
L
θ
12
3
CMT2N7002E
SMALL SIGNAL MOSFET
2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 6
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
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