CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 200 V
V
RMS
24 31 35 42 63 70 105 140 V
V
DC
35 45 50 60 90 100 150 200 V
I
F(AV)
A
I
RRM
A
0.15
dV/dt V/μs
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1308039 Version: L13
MBR2035CT thru MBR20200CT
Taiwan Semiconductor
Dual Common Cathode Schottk
y
Rectifier
FEATURES
0.99
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
MBR
2050
CT
MBR
2060
CT
TO-220AB
Case: TO-220AB
Polarity: As marked
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25 unless otherwise noted)
Mounting torque: 5 in-lbs maximum
MBR
2090
CT
MBR
20100
CT
MBR
20150
CT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
PARAMETER SYMBOL
MBR
2035
CT
MBR
2045
CT
Maximum DC blocking voltage
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
A
Peak repetitive reverse surge current (Note 1) 1
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz) I
FRM
A
Maximum instantaneous forward voltage (Note 2)
I
F
=10A, T
J
=25
I
F
=10A, T
J
=125
I
F
=20A, T
J
=25
I
F
=20A, T
J
=125
V
F
V
- 0.80 0.85
0.57 0.87
0.84 0.95 0.95
0.72 0.85 0.85
0.70 0.75
Typical thermal resistance 1.0
Operating junction temperature range
Maximum reverse current @ rated VR T
J
=25
T
J
=125 I
R
mA
15
10000
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
MBR
20200
CT
20
20
150
0.5
Voltage rate of change (Rated V
R
)
- 55 to +150
1.23
1.10
0.1
2.0
- 55 to +150
10 5
PART NO.
MBR20xxCT
PART NO.
MBR2060CT
MBR2060CT
MBR2060CT
(TA=25 unless otherwise noted)
Document Number: DS_D1308039 Version: L13
MBR2035CT thru MBR20200CT
Taiwan Semiconductor
AEC-Q101
QUALIFIED
RATINGS AND CHARACTERISTICS CURVES
MBR2060CT C0G
MBR2060CTHC0
MBR2060CT C0 C0
GREEN COMPOUND
CODE PACKAGE
Prefix "H" C0 Suffix "G" TO-220AB
HC0
Green compound
Note 1: "xx" defines voltage from 35V (MBR2035CT) to 200V (MBR20200CT)
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE
AEC-Q101 qualified
C0 G
ORDERING INFORMATION
PACKING
50 / Tube
EXAMPLE
DESCRIPTION
PACKING CODE
0
4
8
12
16
20
24
0 50 100 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1- FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
25
50
75
100
125
150
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=75
TJ=125
TJ=25
MBR2035CT-2045CT
MBR2050CT-20100CT
MBR20150CT-20200CT
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
TJ=125
Pulse Width=300μs
1% Duty Cycle
TJ=25
MBR2035CT-2045CT
MBR2050CT-2060CT
MBR20100CT
MBR20150CT-200CT
Min Max Min Max
A - 10.50 - 0.413
B 2.62 3.44 0.103 0.135
C 2.80 4.20 0.110 0.165
D 0.68 0.94 0.027 0.037
E 3.54 4.00 0.139 0.157
F 14.60 16.00 0.575 0.630
G 13.19 14.79 0.519 0.582
H 2.41 2.67 0.095 0.105
I 4.42 4.76 0.174 0.187
J 1.14 1.40 0.045 0.055
K 5.84 6.86 0.230 0.270
L 2.20 2.80 0.087 0.110
M 0.35 0.64 0.014 0.025
P/N = Marking Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1308039 Version: L13
MARKING DIAGRAM
MBR2035CT thru MBR20200CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
PER LEG
MBR2035CT-2045CT
MBR2050CT-20200CT
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (/W)
T-PULSE DURATION. (sec)
FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308039 Version: L13
MBR2035CT thru MBR20200CT
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,