BSS138DW
Document number: DS30203 Rev. 11 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated
BSS138D
W
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Available in Lead Free/RoHS Compliant Version (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 5 and 6)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Also Available in Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe). Please see Ordering Information,
Note 8, on Page 3
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-363
S
1
D
1
D
2
S
2
G
1
G
2
TOP VIEW
Internal Schematic
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol BSS138DW Units
Drain-Source Voltage VDSS 50 V
Drain-Gate Voltage (Note 3) VDGR 50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 1) Continuous ID 200 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol BSS138DW Units
Total Power Dissipation (Note 1) Pd 200 mW
Thermal Resistance, Junction to Ambient RθJA 625 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 50 75 ⎯ V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 µA VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) 0.5 1.2 1.5 V VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS (ON) ⎯ 1.4 3.5 Ω VGS = 10V, ID = 0.22A
Forward Transconductance gFS 100 ⎯ ⎯ mS VDS =25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ ⎯ 50 pF
Output Capacitance Coss ⎯ ⎯ 25 pF
Reverse Transfer Capacitance Crss ⎯ ⎯ 8.0 pF
VDS = 10V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ⎯ ⎯ 20 ns
Turn-Off Delay Time tD(OFF) ⎯ ⎯ 20 ns
VDD = 30V, ID = 0.2A,
RGEN = 50Ω
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. RGS ≤ 20KΩ.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BSS138D
W
0
0.1
0.2
0.3
0.4
0.5
0.6
1
03
254 7
68
910
I, D
0
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
GS
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0.8
011.50.5 2 3.5 4 4.52.5 3
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
D
-55 C
°
150 C
°
25 C
°
V = 1V
DS
BSS138DW
Document number: DS30203 Rev. 11 - 2
2 of 4
www.diodes.com
November 2007
© Diodes Incorporated
R
AIN-S
O
U
R
C
E
C
U
R
R
EN
T
(A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
DS
T = 25 C
j
°
V = 3.5V
GS
V = 3.25V
GS
V = 3.0V
GS
V = 2.75V
GS
V = 2.5V
GS
0
0.2
0.4
0.6
0.8
1
1.4
1.2
2
1.8
1.6
-55 -25 50 10075
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
T , JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
j
125
250150
0.65
T , JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
j
0.85
1.05
1.25
1.65
1.45
1.85
2.05
2.25
2.45
-55 -5 45 95 145
V = 10V
GS
V = 4.5V
GS
I = 0.5A
D
I = 0.075A
D
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
0
I , DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
4
5
6
7
8
00.02 0.04 0.06 0.08 0.16
0.14
0.120.1
150 C
°
-55 C
°
25 C
°
V = 2.5V
GS
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
0
I , DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
5
4
6
7
8
9
00.05 0.1 0.2
0.15 0.25
150 C
°
-55 C
°
25 C
°
V = 2.75V
GS
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
BSS138D
W
0
0.5
1
1.5
2
2.5
3
3.5
00.5
I , DRAIN-CURRENT (A)
Fig. 8 Drain-Source On-Resistance vs. Drain-Current
D
150 C
°
-55 C
°
25 C
°
V = 10V
GS
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
0
1
2
3
4
5
6
00.5
I , DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
D
150 C
°
-55 C
°
25 C
°
V = 4.5V
GS
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
C
,
C
A
P
A
C
I
T
AN
C
E (
p
F
)
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain-Source Voltage
DS
0510 15 20 25 30
V = 0V
f = 1MHz
GS
C
rss
C
oss
C
iss
I, DI
O
DE
C
U
R
R
EN
T
(A)
D
0.001
0.01
0.1
1
V , DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
SD
00.2 0.4 0.6 0.8 11.2
150 C
°
-55 C
°
25 C
°
Ordering Information (Notes 7 & 8)
Part Number Case Packaging
BSS138DW-7 SOT-363 3000/Tape & Reel
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
8. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BSS138DW-7-F.
Marking Information
K38
K38
YM
YM
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
BSS138DW
Document number: DS30203 Rev. 11 - 2
3 of 4
www.diodes.com
November 2007
© Diodes Incorporated
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
BSS138D
W
Package Outline Dimensions
BSS138DW
Document number: DS30203 Rev. 11 - 2
4 of 4
www.diodes.com
November 2007
© Diodes Incorporated
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
A
M
JL
D
B C
H
K
F
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J ⎯ 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α 0° 8°
All Dimensions in mm
X
Z
Y
C
EE
G
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C 1.9
E 0.65
