BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * Mechanical Data * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Available in Lead Free/RoHS Compliant Version (Note 4) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 5 and 6) Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 8, on Page 3 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) * * * * * * * SOT-363 TOP VIEW Maximum Ratings Thermal Characteristics S2 G2 D1 Symbol VDSS VDGR VGSS ID Continuous Continuous BSS138DW 50 50 20 200 Units V V V mA BSS138DW 200 625 -55 to +150 Units mW C/W C @TA = 25C unless otherwise specified Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time 2. 3. 4. 5. 6. S1 TOP VIEW Internal Schematic Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range 1. G1 @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 3) Gate-Source Voltage Drain Current (Note 1) Notes: D2 Symbol Pd RJA Tj, TSTG @TA = 25C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 50 75 0.5 100 V A nA VGS = 0V, ID = 250A VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) RDS (ON) gFS 0.5 100 1.2 1.4 1.5 3.5 V mS VDS = VGS, ID = 250A VGS = 10V, ID = 0.22A VDS =25V, ID = 0.2A, f = 1.0KHz Ciss Coss Crss 50 25 8.0 pF pF pF VDS = 10V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 20 20 ns ns VDD = 30V, ID = 0.2A, RGEN = 50 Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration pulse test used to minimize self-heating effect. RGS 20K. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS138DW Document number: DS30203 Rev. 11 - 2 1 of 4 www.diodes.com November 2007 (c) Diodes Incorporated BSS138DW 0.8 VGS = 3.5V T j = 25 C 0.7 0.5 ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) 0.6 VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 150C 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 4.5 2 VGS(th), GATE THRESHOLD VOLTAGE (V) 2.25 2.05 1.85 VGS = 10V ID = 0.5A 1.65 1.45 1.25 VGS = 4.5V ID = 0.075A 1.05 0.85 45 145 95 -5 Tj, JUNCTION TEMPERATURE (C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature VGS = 2.5V 150C 7 6 5 25C 4 3 -55C 2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN-CURRENT (A) Fig. 5 Drain-Source On-Resistance vs. Drain-Current BSS138DW Document number: DS30203 Rev. 11 - 2 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 150 -25 Tj, JUNCTION TEMPERATURE (C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 8 1.8 0 -55 0.65 -55 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 25C 0.5 2 2.45 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () -55 C 0.6 7 3 4 5 6 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 1 0 VDS = 1V 2 of 4 www.diodes.com 9 VGS = 2.75V 8 7 150C 6 5 4 25C 3 2 -55C 1 0 0.2 0.25 0.1 0.15 ID, DRAIN-CURRENT (A) Fig. 6 Drain-Source On-Resistance vs. Drain-Current 0 0.05 November 2007 (c) Diodes Incorporated 3.5 6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () BSS138DW VGS = 4.5V 5 150 C 4 3 25C 2 1 -55C 0 0 0.5 150C VGS = 10V 3 2.5 2 25C 1.5 1 -55C 0.5 0 0 0.5 ID, DRAIN-CURRENT (A) Fig. 8 Drain-Source On-Resistance vs. Drain-Current ID, DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current 100 1 C, CAPACITANCE (pF) ID, DIODE CURRENT (A) VGS = 0V f = 1MHz 150C 0.1 -55C 0.01 25C Ciss 10 Coss C rss 0.001 1 0.2 0.6 1 1.2 0.4 0.8 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 0 Ordering Information (Notes 7 & 8) Part Number BSS138DW-7 Notes: 5 15 20 25 10 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain-Source Voltage 0 Case SOT-363 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 8. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BSS138DW-7-F. Marking Information YM 1998 J 1999 K 2000 L 2001 M K38 Date Code Key Year Code K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM K38 2002 N 2003 P 2004 R 2005 S 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D BSS138DW Document number: DS30203 Rev. 11 - 2 3 of 4 www.diodes.com November 2007 (c) Diodes Incorporated BSS138DW Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0 8 All Dimensions in mm B C H K M J D F L Suggested Pad Layout E Z E C G Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS138DW Document number: DS30203 Rev. 11 - 2 4 of 4 www.diodes.com November 2007 (c) Diodes Incorporated