Vishay General Semiconductor
RMB2S & RMB4S
Document Number 88705
11-Oct-06
www.vishay.com
1
Miniature Glass Passivated Fast Recovery
Surface Mount Bridge Rectifier
FEATURES
• UL Recognition, file number E54214
• Saves space on printed circuit boards
• Ideal for automated placement
• Fast recovery, low switching loss
• High surge current capability
• Meets MSL level 1, per J-STD-020C, LF max peak
of 250 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for Power Supply, Lighting Ballaster,
Battery Charger, Home Appliances, Office Equipment,
and Telecommunication applications.
MECHANICAL DATA
Case: TO-269AA (MBS)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked on body
TO-269AA (MBS)
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MAJOR RATINGS AND CHARACTERISTICS
IF(AV) 0.5 A
VRRM 200 V, 400 V
IFSM 30 A
trr 150 ns
VF1.25 V
Tj max. 150 °C
Note:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL RMB2S RMB4S UNIT
Device marking code 2R 4R
Maximum repetitive peak reverse voltage VRRM 200 400 V
Maximum RMS voltage VRMS 140 280 V
Maximum DC blocking voltage VDC 200 400 V
Maximum average forward output
rectified current at TA = 30 °C
on glass-epoxy P.C.B.
on aluminum substrate IF(AV) 0.5 (1)
0.8 (2) A
Peak forward surge current 8.3 msec single half sine-wave
superimposed on rated load IFSM 30 A
Rating for fusing (t < 8.3 ms) I2t5.0A
2sec
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
www.vishay.com
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Document Number 88705
11-Oct-06
Vishay General Semiconductor
RMB2S & RMB4S
Note:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL RMB2S RMB4S UNIT
Maximum instantaneous forward voltage
drop per diode at 0.4 A VF 1.25 V
Maximum DC reverse current at rated DC
blocking voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
100 µA
Maximum reverse recovery time per diode at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 150 ns
Typical junction capacitance per diode at 4.0 V, 1 MHz CJ 13 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL RMB2S RMB4S UNIT
Typical thermal resistance
RθJA
RθJA
RθJL
85 (1)
70 (2)
20 (1)
°C/W
ORDERING INFORMATION
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
RMB4S-E3/45 0.22 45 100 Tube
RMB4S-E3/80 0.22 80 3000 13" Diameter Paper Tape & Reel
Figure 1. Maximum Forward Current Derating Curve
020 40 60 80100 120 140 160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Aluminum Substrate
Glass Epoxy P.C.B.
Average Forward Rectified Current (A)
Ambient Temperature (°C)
Resistive or Inductive Load
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
110 100
0
5
10
15
20
25
30
35
1.0 Cycle
f = 60 Hz
f = 50 Hz
TA = 40 °C
Single Half Sine-Wave
Number of Cycles
Peak Forward Surge Current (A)
Document Number 88705
11-Oct-06
www.vishay.com
3
RMB2S & RMB4S
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.2 0.4 0.6 0.81.0 1.2 1.4
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Pulse Width = 300 µs
1 % Duty Cycle
Tj = 150 °C
Tj = 25 °C
020 40 60 80100
0.01
0.1
1
10
100
Tj = 125 °C
Tj = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
Figure 5. Typical Junction Capacitance Per Diode
0.1 110 100
0
5
10
15
20
25
30
200
T
j
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.029 (0.74)
0.017 (0.43)
0-8°0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058(1.47)
0.016 (0.41)
0.006 (0.15)
0.018(0.46)
0.014 (0.36)
0.008(0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058(1.47)
0.054 (1.37)
0.252 (6.40)
0.272 (6.90)
0.106 (2.70)
0.090 (2.30)
0.0075 (0.19)
0.0065 (0.16)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0.144 (3.65)
0.161 (4.10)
0.205 (5.21)
0.195 (4.95)
0.114 (2.90)
0.094 (2.40) 0.038(0.96)
0.019 (0.48)
0.272 MAX.
(6.91 MAX.)
0.105 (2.67)
0.095 (2.41)
0.030 MIN.
(0.76 MIN.)
0.023 MIN.
(0.58MIN.)
TO-269AA (MBS)
MountingPad Layout
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
