Type 2N3501L
Geometry 5620
Polarity NPN
Qual Level: JAN - JANS
Data Sheet No. 2N3501L
Generic Part Number:
2N3500L
REF: MIL-PRF-19500/366
Features:
• General-purpose silicon transistor
for switching and amplifier appli-
cations.
• Housed in TO-5 case.
• Also available in chip form using
the 5620 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/366 which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter voltage VCEO 150 V
Collector-Base Voltage VCBO 150 V
Emitter-Base voltage VEBO 6.0 V
Collector Current, Continuous IC300 mA
Power Dissipation, TA = 25oC5.0 mW
Derate above 25oC28.8 mW/oC
Operating Junction Temperature TJ-65 to +200 oC
Storage Temperature TSTG -65 to +200 oC
Maximum Ratings
TC = 25oC unless otherwise specified
PD
TO-5
Data Sheet No. 2N3501L
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Base Cutoff Current
VCB = 75 V
Emitter-Base Cutoff Current
VEB = 4 V IEBO --- 25 nA
ICBO --- 50 nA
V
V(BR)EBO 6.0 ---
V(BR)CEO 150 --- V
Electrical Characteristics
TC = 25oC unless otherwise specified
V(BR)CBO 150 --- V
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 100 µA, VCE = 10 V (pulsed) hFE1 35 --- ---
IC = 1.0 mA, VCE = 10 V (pulsed) hFE2 50 --- ---
IC = 10 mA, VCE = 10 V (pulsed) hFE3 75 --- ---
IC = 150 mA, VCE = 10 V (pulsed) hFE4 100 300 ---
IC = 300 mA, VCE = 10 V (pulsed) hFE5 20 --- ---
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA VBE(sat)1 --- 0.8 V dc
IC = 150 mA, IB = 15 mA VBE(sat)2 --- 1.2 V dc
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA VCE(sat)1 --- 0.2 V dc
IC = 150 mA, IB = 15 mA VCE(sat)2 --- 0.4 V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Short Circuit Forward Current Transfer Ratio
IC = 10 mA, VCE = 10 V, f = 1 kHz
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 20 V, IC = 20 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Noise Figure
VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
Noise Figure
VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
AC hFE 75 375 ---
NF --- 6.0 dB
NF --- 16 dB
|hFE|1.5 8.0 ---
pF
CIBO --- 80 pF
COBO --- 8.0
Switching Characteristics
Symbol
Min
Max
Unit
Saturated Turn On Switching time to 90%
IC = 150 mA, IB1 = 15 mA, VEB = 2 V
Saturated Turn Off Switching time to 10%
IC = 150 mA, IB2 = -IB1 = 15 mA
tON --- 115 ns
1150 ns
tOFF ---
