Document Number: 88504 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-Aug-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Glass Passivated Junction Rectifier
1N4001GP thru 1N4007GP
Vishay General Semiconductor
FEATURES
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current, typical IR less than 0.1 μA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for both
consumer and automotive applications.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Note
(1) JEDEC registered values
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 50 V to 1000 V
IFSM 30 A
IR5.0 μA
VF1.1 V
TJ max. 175 °C
DO-204AL (DO-41)
* Glass encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT
Maximum repetitive peak
reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS (1) 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC (1) 50 100 200 400 600 800 1000 V
Maximum average forward
rectified current 0.375" (9.5 mm)
lead length at TA = 75 °C
IF(AV) (1) 1.0 A
Peak forward surge current 8.3
ms single half sine-wave
superimposed on rated load
IFSM (1) 30 A
Maximum full load reverse
current, full cycle average 0.375"
(9.5 mm) lead length TA = 75 °C
IR(AV) (1) 30 μA
Operating junction and storage
temperature range TJ, TSTG (1) - 65 to + 175 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88504
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Aug-09
1N4001GP thru 1N4007GP
Vishay General Semiconductor
Note
(1) JEDEC registered values
Note
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST
CONDITIONS SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT
Maximum
instantaneous
forward voltage
1.0 A VF1.1 V
Maximum DC
reverse current
at rated DC
blocking voltage
TA = 25 °C
IR (1)
5.0
μA
TA = 125 °C 50
Typical reverse
recovery time
IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
trr 2.0 μs
Typical junction
capacitance
4.0 V,
1 MHz CJ8.0 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT
Typical thermal resistance RθJA (1) 55 °C/W
RθJL (1) 25
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N4004GP-E3/54 0.335 54 5500 13" diameter paper tape and reel
1N4004GP-E3/73 0.335 73 3000 Ammo pack packaging
1N4004GPHE3/54 (1) 0.335 54 5500 13" diameter paper tape and reel
1N4004GPHE3/73 (1) 0.335 73 3000 Ammo pack packaging
0
025 50 75 100 125 150 175
0.2
0.4
0.6
0.8
1.0
Ambient Temperature (°C)
Average Forward Rectied Current (A)
60 Hz
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
5
101 100
10
15
20
25
30
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Document Number: 88504 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-Aug-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
1N4001GP thru 1N4007GP
Vishay General Semiconductor
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0
0.01
0.1
1
10
60 80 10020 40
T
J
= 25 °C
T
J
= 100 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
0.1 101 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01 0.1 101 100
0.1
10
100
1
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.107 (2.7)
0.080 (2.0)
DIA.
0.034 (0.86)
0.028 (0.71)
DIA.
• Lead diameter isfor sufx “E” part numbers
0.026 (0.66)
0.023 (0.58)
Note
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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