74VHC245FT CMOS Digital Integrated Circuits Silicon Monolithic 74VHC245FT 1. Functional Description * Octal Bus Transceiver 2. General The 74VHC245FT is an advanced high speed CMOS OCTAL BUS TRANSCEIVER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. It is intended for two-way asynchronous communication between data busses. The direction of data transmission is determined by the level of the DIR input. The enable input (G) can be used to disable the device so that the busses are effectively isolated. All inputs are equipped with protection circuits against static discharge. 3. Features (Note) (1) AEC-Q100 (Rev. H) (Note 1) (2) Wide operating temperature range: Topr = -40 to 125 (3) High speed: Propagation delay time = 4.0 ns (typ.) at VCC = 5.0 V (4) Low power dissipation: ICC = 4.0 A (max) at Ta = 25 (5) High noise immunity: VNIH = VNIL = 28 % VCC (min) (6) Balanced propagation delays: tPLH tPHL (7) Wide operating voltage range: VCC(opr) = 2.0 V to 5.5 V (8) Low noise: VOLP = 1.0 V (max) (9) Pin and function compatible with the 74 series (74AC/HC/AHC etc.) 245 type. Note: Do not apply a signal to any bus terminal when it is in the output mode. Damage may result. All floating (high impedance) bus terminals must have their input levels fixed by means of pull up or pull down resistors. A parasitic diode is formed between the bus and VCC terminals. Therefore bus terminal can not be used to interface 5 V to 3 V systems directly. Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales representative. 4. Packaging TSSOP20B Start of commercial production (c)2017 Toshiba Corporation 1 2013-04 2017-02-22 Rev.4.0 74VHC245FT 5. Pin Assignment 6. Marking 7. IEC Logic Symbol (c)2017 Toshiba Corporation 2 2017-02-22 Rev.4.0 74VHC245FT 8. Truth Table Input G X: Z: Input DIR A BUS B BUS Output L L L H Output Input A=B Input Output B=A H X Z Z Z Don't care High impedance 9. Absolute Maximum Ratings (Note) Characteristics Symbol Supply voltage Note VCC Rating Unit -0.5 to 7.0 V Input voltage(DIR,G) VIN -0.5 to 7.0 V Bus I/O voltage VI/O -0.5 to VCC + 0.5 V Input diode current IIK -20 mA Output diode current IOK 20 mA Output current IOUT 25 mA VCC/ground current ICC 75 mA 180 mW -65 to 150 Power dissipation PD Storage temperature Tstg (Note 1) Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: 180 mW in the range of Ta = -40 to 85 . From Ta = 85 to 125 a derating factor of -3.25 mW/ shall be applied until 50 mW. 10. Operating Ranges (Note) Characteristics Supply voltage Symbol Test Condition VCC Rating Unit 2.0 to 5.5 V Input voltage(DIR,G) VIN 0 to 5.5 V Bus I/O voltage VI/O 0 to VCC V Operating temperature Topr Input rise and fall times dt/dv Note: -40 to 125 VCC = 3.3 0.3 V 0 to 100 ns/V VCC = 5.0 0.5 V 0 to 20 The operating ranges are required to ensure the normal operation of the device. Unused inputs and bus inputs must be tied to either VCC or GND. Please connect both bus inputs and the bus outputs with VCC or GND when the I/O of the bus terminal changes by the function. In this case, please note that the output is not short-circuited. (c)2017 Toshiba Corporation 3 2017-02-22 Rev.4.0 74VHC245FT 11. Electrical Characteristics 11.1. DC Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage 3-state output OFF-state leakage current Symbol Test Condition VCC (V) Min Typ. Max Unit VIH 2.0 1.50 V 3.0 to 5.5 VCC x 0.7 2.0 0.50 3.0 to 5.5 VCC x 0.3 2.0 1.9 2.0 3.0 2.9 3.0 VIL VOH VOL VIN = VIH or VIL IOH = -50 A VIN = VIH or VIL 4.5 4.4 4.5 IOH = -4 mA 3.0 2.58 IOH = -8 mA 4.5 3.94 IOL = 50 A 2.0 0.0 0.1 3.0 0.0 0.1 4.5 0.0 0.1 IOL = 4 mA 3.0 0.36 IOL = 8 mA 4.5 0.36 V V V IOZ VIN = VIH or VIL VOUT = VCC or GND 5.5 0.25 A Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 0.1 A Quiescent supply current ICC VIN = VCC or GND 5.5 4.0 A 11.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 ) Characteristics Symbol Test Condition VCC (V) Min Max Unit High-level input voltage VIH 2.0 1.50 V 3.0 to 5.5 VCC x 0.7 Low-level input voltage VIL 2.0 0.50 3.0 to 5.5 VCC x 0.3 High-level output voltage VOH 2.0 1.9 3.0 2.9 4.5 4.4 IOH = -4 mA 3.0 2.48 IOH = -8 mA 4.5 3.80 IOL = 50 A 2.0 0.1 3.0 0.1 Low-level output voltage VOL VIN = VIH or VIL IOH = -50 A VIN = VIH or VIL 4.5 0.1 IOL = 4 mA 3.0 0.44 IOL = 8 mA V V V 4.5 0.44 3-state output OFF-state leakage current IOZ VIN = VIH or VIL VOUT = VCC or GND 5.5 2.50 A Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 1.0 A Quiescent supply current ICC VIN = VCC or GND 5.5 40.0 A (c)2017 Toshiba Corporation 4 2017-02-22 Rev.4.0 74VHC245FT 11.3. DC Characteristics (Unless otherwise specified, Ta = -40 to 125 ) Characteristics Symbol High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage 3-state output OFF-state leakage current Test Condition VIH VIL VOH VOL VCC (V) VIN = VIH or VIL IOH = -50 A VIN = VIH or VIL Min Max Unit V 2.0 1.50 3.0 to 5.5 VCC x 0.7 2.0 0.50 3.0 to 5.5 VCC x 0.3 2.0 1.9 3.0 2.9 V V 4.5 4.4 IOH = -4 mA 3.0 2.40 IOH = -8 mA 4.5 3.70 IOL = 50 A 2.0 0.1 3.0 0.1 4.5 0.1 IOL = 4 mA 3.0 0.55 IOL = 8 mA 4.5 0.55 10.0 A V IOZ VIN = VIH or VIL VOUT = VCC or GND 5.5 Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 2.0 A Quiescent supply current ICC VIN = VCC or GND 5.5 80.0 A 11.4. AC Characteristics (Unless otherwise specified, Ta = 25 , Input: tr = tf = 3 ns) Characteristics Symbol Propagation delay time tPLH,tPHL Note Test Condition VCC (V) CL (pF) Min Typ. Max Unit 3.3 0.3 15 5.8 8.4 ns 50 8.3 11.9 15 4.0 5.5 50 5.5 7.5 15 8.5 13.2 50 11.0 16.7 15 5.8 8.5 5.0 0.5 3-state output enable time tPZL,tPZH RL = 1 k 3.3 0.3 5.0 0.5 3-state output disable time Output skew tPLZ,tPHZ RL = 1 k tosLH,tosHL (Note 1) Input capacitance CIN Bus I/O capacitance CI/O Power dissipation capacitance CPD (Note 2) 50 7.3 10.6 3.3 0.3 50 11.5 15.8 5.0 0.5 50 7.0 9.7 3.3 0.3 50 1.5 5.0 0.5 50 ns ns ns 1.0 DIR, G 4 10 pF An, Bn 8 pF 21 pF Note 1: Parameter guaranteed by design. (tosLH = |tPLHm-tPLHn|, tosHL = |tPHLm-tPHLn|) Note 2: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per bit) (c)2017 Toshiba Corporation 5 2017-02-22 Rev.4.0 74VHC245FT 11.5. AC Characteristics (Unless otherwise specified, Ta = -40 to 85 , Input: tr = tf = 3 ns) Characteristics Symbol Propagation delay time tPLH,tPHL Note Test Condition VCC (V) CL (pF) Min Max Unit 3.3 0.3 15 1.0 10.0 ns 50 1.0 13.5 15 1.0 6.5 50 1.0 8.5 15 1.0 15.5 50 1.0 19.0 15 1.0 10.0 50 1.0 12.0 3.3 0.3 50 1.0 18.0 5.0 0.5 50 1.0 11.0 3.3 0.3 50 1.5 5.0 0.5 50 1.0 10 5.0 0.5 3-state output enable time tPZL,tPZH RL = 1 k 3.3 0.3 5.0 0.5 3-state output disable time Output skew tPLZ,tPHZ RL = 1 k tosLH,tosHL (Note 1) Input capacitance CIN DIR, G ns ns ns pF Note 1: Parameter guaranteed by design. (tosLH = |tPLHm-tPLHn|, tosHL = |tPHLm-tPHLn|) 11.6. AC Characteristics (Unless otherwise specified, Ta = -40 to 125 , Input: tr = tf = 3 ns) Characteristics Symbol Propagation delay time Note Test Condition VCC (V) CL (pF) Min Max Unit 3.3 0.3 15 1.0 11.5 ns 50 1.0 15.0 15 1.0 7.5 50 1.0 9.5 15 1.0 17.0 50 1.0 20.5 15 1.0 11.5 tPLH,tPHL 5.0 0.5 3-state output enable time tPZL,tPZH RL = 1 k 3.3 0.3 5.0 0.5 3-state output disable time Output skew tPLZ,tPHZ RL = 1 k tosLH,tosHL (Note 1) Input capacitance CIN 50 1.0 13.5 3.3 0.3 50 1.0 19.5 5.0 0.5 50 1.0 12.5 3.3 0.3 50 1.5 5.0 0.5 50 1.0 10 DIR, G ns ns ns pF Note 1: Parameter guaranteed by design. (tosLH = |tPLHm-tPLHn|, tosHL = |tPHLm-tPHLn|) 11.7. Noise Characteristics (Unless otherwise specified, Ta = 25 , Input: tr = tf = 3 ns) Characteristics Symbol Test Condition VCC (V) Typ. Limit Unit Quiet output maximum dynamic VOL VOLP CL = 50 pF 5.0 0.7 1.0 V Quiet output minimum dynamic VOL VOLV CL = 50 pF 5.0 -0.7 -1.0 V Minimum high-level dynamic input voltage VIHD CL = 50 pF 5.0 3.5 V Maximum low-level dynamic input voltage VILD CL = 50 pF 5.0 1.5 V (c)2017 Toshiba Corporation 6 2017-02-22 Rev.4.0 74VHC245FT 12. Internal Equivalent Circuit 13. Bus Terminal Equivalent Circuit (c)2017 Toshiba Corporation 7 2017-02-22 Rev.4.0 74VHC245FT Package Dimensions Unit: mm Weight: 0.071 g (typ.) Package Name(s) Nickname: TSSOP20B (c)2017 Toshiba Corporation 8 2017-02-22 Rev.4.0 74VHC245FT RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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