A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : add = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm) High ESD tolerance Suitable for VHF to UHF-BAND Class-AB power amplifier. ED * * * * * APPLICATIONS IN U * 150 MHz Band Radio System * 460 MHz Band Radio System * 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550779A Order Number NE5550779A-A NE5550779A-T1 NE5550779A-T1-A Package 79A (Pb-Free) Marking W8 Supplying Form * 12 mm wide embossed taping * Gate pin faces the perforation side of the tape * * * * * * SC O NT 12 mm wide embossed taping Gate pin faces the perforation side of the tape Qty 1 kpcs/reel NE5550779A-T1A NE5550779A-T1A-A 12 mm wide embossed taping Gate pin faces the perforation side of the tape Qty 5 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5550779A-A ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) Operation in excess of any one of these parameters may result in permanent damage. Symbol VDS VGS IDS Drain Current (50% Duty Pulsed) Total Power Dissipation Note Channel Temperature Storage Temperature DI Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Note: IDS-pulse Ratings 30 6.0 2.1 4.2 Unit V V A A Ptot Tch Tstg 17.8 150 -55 to +150 W C C Value at TC = 25C CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 1 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A RECOMMENDED OPERATING RANGE (TA = 25C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions MIN. - 1.65 - - f = 460 MHz, VDS = 7.5 V TYP. 7.5 2.20 1.4 25 MAX. 9.0 2.85 - 30 Unit V V A dBm Vth BVDSS Gm Rth Pout IDS d add GL Note 1 Note 2 MIN. TYP. MAX. Unit - - - - 100 10 A VDS = 7.5 V, IDS = 1.0 mA IDS = 10 A VDS = 7.5 V, IDS = 49070 mA Channel to Case 1.15 25 1.26 - 1.65 38 1.54 7.0 2.25 - 2.03 - V V S C/W f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 140 mA (RF OFF) 37.0 - - - - 38.5 1.38 68 66 22.0 - - - - - dBm A % % dB - - - - - - - - - - dBm A % % dB dBm A % % dB VGS = 6.0 V VDS = 25 V IN U IGSS IDSS Test Conditions f = 460 MHz, VDS = 9.0 V, Pin = 25 dBm, IDset = 140 mA (RF OFF) Load VSWR=20:1(All Phase) f = 157 MHz, VDS = 7.5 V, Pin = 23 dBm, IDset = 140 mA (RF OFF) Pout IDS d add GL Note 3 Pout IDS SC O Output Power Drain Current Power Drain Efficiency Power Added Efficiency Linear Gain Output Power Drain Current Power Drain Efficiency Power Added Efficiency Linear Gain Symbol NT Parameter DC Characteristics Gate to Source Leakage Current Drain to Source Leakage Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Drain to Source Breakdown Voltage Transconductance Thermal Resistance RF Characteristics Output Power Drain Current Power Drain Efficiency Power Added Efficiency Linear Gain Load VSWR Tolerance Notes: 1. 2. 3. 4. d add GL Note 4 ED ELECTRICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 140 mA (RF OFF) nA No Destroy - - - - - - - - - - 38.5 1.36 69 67 24.0 37.4 1.26 58 53 17.0 Pin = 10 dBm These characteristics values are measurement using measurement tools especially by RENESAS. Pin = 5 dBm Pin = 10 dBm DI Remark DC performance is 100% testing. RF performance is testing several samples per wafer. A wafer rejection criterion for standard devices is 1 reject for several samples. R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 2 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A TEST CIRCUIT SCHEMATIC FOR 460 MHz VGS VDS R1 C1 L1 C1 IN OUT C10 L2 C11 C12 C22 C13 NE5550779A 50 ED 50 C20 L3 C21 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type GRM188B31C105KA92 GRM1882C1H270JA01 ATC100A2R7JW Maker Murata Murata C12 12 pF ATC100A120BW American Technical Ceramics C13 12 pF ATC100A120BW American Technical Ceramics C20 24 pF ATC100A240JW American Technical Ceramics C21 6.8 pF C22 100 pF R1 2 k L1 L2 L3 PCB SMA Connecter 114 nH 4.7 nH 3.0 nH - - NT IN U Value 1 F 27 pF 2.7 pF American Technical Ceramics ATC100A6R8BW American Technical Ceramics ATC100A101JW American Technical Ceramics KOA SC O 1/10 W Chip Resistor RK73B1JTTD202J 0.5 mm, D = 3 mm, 10 Turns LQW18AN4R7NG00 LQP15MN3N0B02 R1766, t = 0.4 mm, r = 4.5, size = 30 x 48 mm WAKA 01K0790-20 Ohesangyou Murata Murata Panasonic WAKA DI <R> Symbol C1 C10 C11 R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 3 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz VDS VGS C1 L1 C11 RF IN C12 C12 R1 C13 C13 L2 C10 ED C1 C20 C21 L3 RF OUT DI SC O NT IN U C22 R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 4 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A TYPICAL CHARACTERISTICS 1 (TA = 25C) R: f = 460MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 140 mA, Pin = 0 to 30 dBm IM: f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 140mA, Pout (2 tone) = 12 to 37 dBm 40 40 3.0 Pout - 3.6 V Pout - 4.5 V Pout - 6 V Pout - 7.5 V Pout - 9 V 2.7 35 2.4 30 2.1 25 1.8 Gp - 3.6 V Gp - 4.5 V Gp - 6 V Gp - 7.5 V Gp - 9 V add - 3.6 V add - 4.5 V add - 6 V add - 7.5 V add - 9 V 35 1.2 20 40 15 30 10 20 5 10 0 5 10 NT 0.3 15 20 25 30 0.0 35 0 -5 0 5 10 15 20 25 30 35 Input Power Pin (dBm) Input Power Pin (dBm) 2f0 vs. OUTPUT POWER IM3/IM5 vs. 2 TONES OUTPUT POWER 0 -30 -40 DI -50 -60 20 25 30 35 40 45 Output Power Pout (dBm) 3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc) 2f0 - 3.6 V 2f0 - 4.5 V 2f0 - 6 V 2f0 - 7.5 V 2f0 - 9 V -20 -70 15 50 0.6 SC O 2nd Harmonics 2f0 (dBc) -10 60 0.9 0 0 25 70 IN U IDS - 3.6 V IDS - 4.5 V IDS - 6 V IDS - 7.5 V IDS - 9 V 5 -5 -5 Power Gain GP (dB) 1.5 20 10 Drain Current IDS (A) Output Power Pout (dBm) 30 15 80 ED 45 POWER GAIN, POWER ADDED EFFICIENCY vs. INPUT POWER Power Added Efficiency add (%) OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER -10 -20 0 IM3 - 3.6 V IM3 - 4.5 V IM3 - 7.5 V IM3 - 9 V IM5 - 3.6 V IM5 - 4.5 V IM5 - 7.5 V IM5 - 9 V IM3 - 6 V IM5 - 6 V -30 -40 -50 -60 -70 10 15 20 25 30 35 40 2 Tones Output Power Pout (2 tone) (dBm) Remark The graphs indicate nominal characteristics. R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 5 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A TEST CIRCUIT SCHEMATIC FOR 157 MHz VGS VDS R1 C1 L1 C1 IN C10 L10 C11 C12 ED 50 OUT C23 50 L20 NE5550779A C20 C21 C22 74.7 nH 27 nH 29.8 nH - - NT L1 L10 L20 PCB SMA Connecter Type GRM31MB11E105KA01 GQM1882C1H101JB01 GQM1882C2A5R6DB01 GQM1882C1H390JB01 GRM1882C1H220JA01 GQM1882C1H680JB01 GQM1882C1H150JA01 GQM1882C1H101JB01 1/10 W Chip Resistor MCR03J103 0.4 mm, D = 2 mm, 10 Turns LLQ2012-F27N 0.4 mm, D = 2 mm, 5 Turns R1766, t = 0.4 mm, r = 4.5, size = 30 x 48 mm WAKA 01K0790-20 Maker Murata Murata Murata Murata Murata Murata Murata Murata ROAM Ohesangyou Toko Ohesangyou Panasonic WAKA SC O Value 1 F 100 pF 5.6 pF 39 pF 22 pF 68 pF 15 pF 100 pF 5.1 k DI <R> Symbol C1 C10 C11 C12 C20 C21 C22 C23 R1 IN U COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 6 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A C1 C1 L1 L10 IN C10 C11 C11 R1 C 20 C 21 L20 ED COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz C23 OUT DI SC O NT IN U C22 R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 7 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A TYPICAL CHARACTERISTICS 2 (TA = 25C) f = 157 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = -10 to 20 dBm POWER GAIN, POWER ADDED EFFICIENCY vs. INPUT POWER 35 2.5 30 2.0 25 1.5 20 70 30 60 50 25 40 20 30 15 20 10 10 1.0 15 0.5 0 5 10 15 20 25 0.0 30 5 -5 0 NT 10 -5 80 GP - 3.6 V GP - 4.5 V GP - 6 V GP - 7.5 V GP - 9 V add - 3.6 V add - 4.5 V add - 6 V add - 7.5 V add - 9 V IN U Output Power Pout (dBm) 35 40 3.0 Power Gain GP (dB) 40 45 3.5 Pout - 3.6 V Pout - 4.5 V Pout - 6.0 V Pout - 7.5 V Pout - 9 V IDS - 3.6 V IDS - 4.5 V IDS - 6 V IDS - 7.5 V IDS - 9 V Drain Current IDS (A) 45 Input Power Pin (dBm) 5 10 15 20 25 Power Added Efficiency add (%) OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER ED RF: 0 30 Input Power Pin (dBm) DI SC O Remark The graphs indicate nominal characteristics. R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 8 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A TEST CIRCUIT SCHEMATIC FOR 900 MHz VGS VDS R1 C1 L1 C2 IN C10 ED 50 OUT C24 C11 C12 C13 FET NE5550779A C20 C21 50 C23 C22 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Maker Murata Murata Murata Murata Murata Murata Murata Murata Murata Murata Murata Ohesangyou Rohm Panasonic WAKA NT IN U Type GQM1882C1H270JB01 GQM1882C2A6R8DB01 GQM1882C1H150JB01 GQM1882C1H180JB01 GQM1882C1H8R2DB01 GQM1883C2A3R9CB01 GQM1884C2A1R5CB01 GQM1882C1H8R2DB01 GQM1882C1H101JB01 GRM21BB31H105KA2L GRM21BB31H105KA2L D20-74N7 MCR03J203 R1766, t = 0.8 mm, r = 4.8, size = 30 x 40 mm WAKA 01K0790-20 SC O Value 27 pF 6.8 pF 15 pF 18 pF 8.2 pF 3.9 pF 1.5 pF 8.2 pF 100 pF 1 F 1 F 74.7 nH 20 k - - DI <R> Symbol C10 C11 C12 C13 C20 C21 C22 C23 C24 C1 C2 L1 R1 PCB SMA Connecter R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 9 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz VDS VGS C1 C2 RF IN VDS C1 C1 0 L1 L1 C23 C23 C24 C 11 C 20 C 21 C 12 C 22 C11 C12C13 C13 C20 C21C22 R1 C24 DI SC O NT C10 R1 RF OUT IN U RF IN C2 ED VGS R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 10 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A TYPICAL CHARACTERISTICS 3 (TA = 25C) RF: f = 900 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = -5 to 30 dBm POWER GAIN, DRAIN CURRENT vs. INPUT POWER 50 40 15 30 20 15 1.5 1.2 0.9 IN U 20 10 20 5 10 0 -10 (%) add 60 Power Gain GP (dB) 25 25 1.8 GP - 3.6 V GP - 4.5 V GP - 6 V GP - 7.5 V GP - 9 V IDS - 3.6 V IDS - 4.5 V IDS - 6.0 V IDS - 7.5 V IDS - 9 V -5 0 5 10 15 0 10 0.6 5 0.3 0 -10 NT Output Power Pout (dBm) 30 70 Power Added Efficiency 35 30 80 Pout - 3.6 V Pout - 4.5 V Pout - 6.0 V Pout - 7.5 V Pout - 9 V add - 3.6 V add - 4.5 V add - 6.0 V add - 7.5 V add - 9 V 20 25 30 35 Input Power Pin (dBm) -5 0 5 10 15 20 25 30 35 Drain Current IDS (A) 40 ED OUTPUT POWER, POWER ADDED EFFICIENCY vs. INPUT POWER 0 Input Power Pin (dBm) DI SC O Remark The graphs indicate nominal characteristics. R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 11 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] [RF Devices] [Device Parameters] DI SC O NT IN U ED URL http://www.renesas.com/products/microwave/ R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 12 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A MOUNTING LAYOUT PAD DIMENSIONS 79A (UNIT: mm) 4.0 Source ED 1.7 Stop up the hole with a rosin or something to avoid solder flow. Drain 1.2 IN U 0.5 1.0 5.9 Gate Through Hole: 0.2 x 33 0.5 0.5 NT 6.1 Remark The mounting pad layout in this document is for reference only. When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder DI SC O bridge and so on, in order to optimize the design. R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 13 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A PACKAGE DIMENSIONS 79A (UNIT: mm) 1.2 MAX. ED 1.0 MAX. 0.80.15 Drain 0.8 MAX. 0.20.1 3.60.2 DI SC O NT 0.90.2 5.7 MAX. Gate IN U 0.40.15 Drain 4.4 MAX. Source 27001 Source 8 1.50.2 W Gate 0.60.15 5.7 MAX. (Bottom View) 4.2 MAX. R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 14 of 15 A Business Partner of Renesas Electronics Corporation. NE5550779A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2% (Wt.) or below Condition Symbol IR260 ED Soldering Method Infrared Reflow Peak temperature (molten solder temperature) : 260C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below Partial Heating Peak temperature (terminal temperature) : 350C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below IN U Wave Soldering WS260 HS350 CAUTION DI SC O NT Do not use different soldering methods together (except for partial heating). R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Page 15 of 15 Revision History 1.00 2.00 Apr 26, 2012 Jul 04, 2012 Mar 12, 2013 Description Summary Page - p.2 First edition issued Modification of ELECTRICAL CHARACTERISTICS p.6 Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS P3 Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS P6 Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS P9 Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS DI SC O NT IN U 3.00 Date ED Rev. NE5550779A Data Sheet All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE 5. 6. 7. 8. 9. 10. 11. 12. D UE 4. IN 3. NT 2. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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