
MUR1010CT
THRU
MUR1020CT
10 Amp Super Fast
Glass Passivated
Rectifier
Features
Maximum Ratings
• Operating Junction Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
Microsemi
Catalog
Number
Device
Marking Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
MUR1010CT MUR1010CT 100V 70V 100V
MUR1020CT MUR1020CT 200V 140V 200V
MCC
• Glass passivated chip
• Superfast switching time for hight efficiency
• Low reverse leakage current
• High surge capacity
100 to 200 Volts
TO-220AB
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F --- .250 --- 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
PIN 1
PIN 3 PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
132
www.mccsemi.com
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current IF(AV) 10 A TC = 125°C
Peak Forward Surge
Current IFSM 55 A 8.3ms, half sine
Maximum Forward
Voltage Drop Per
Element 0.975V
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR 50uA
500uA TJ = 25°C
TJ = 100°C
0.925V
Maximum Reverse
Recovery Time
*Pulse Test: Pulse Width 300µsec, Duty Cycle 2%
CJ 80pF Measured at
1.0MHz, VR=4.0V
Typical Junction
Capacitance
35ns
Trr
TJ = 25°C IF= 5A
TJ = 125°C
TJ = 25°C IF=10A
TJ = 125°C
IF=0.5A, Ir=1.0A,
Irr=0.25A
VF
1.25V
1.20V
omponents
21201 Itasca Street Chatsworth
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