SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 28051 08 FOR VCO APPLICATION Unit in mm MAXIMUM RATINGS (Ta = 25C) # CHARACTERISTIC SYMBOL | RATING | UNIT 3/8 | Collector-Base Voltage VCBO 20 Vv Collector-Emitter Voltage VCEO 10 Vv . 8 Emitter-Base Voltage VEBO 3 Vv x d] ' 3 Collector Current Ic 30 mA | Base Current Ip 15 mA Collector Power Dissipation Pc 100 mW Junction Temperature T; 125 C 1 BASE Storage Temperature Range Tstg 55~125 C 2. EMITTER SSM = 3. COLLECTOR MARKING JEDEC Type Name EIAJ = BY bre Rank TOSHIBA _2-2H1A e A MB | MB : O Rank Weight : 2.4mg H 8 MC : Y Rank CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo Vcp=10V, Ip=0 0.1 pA Emitter Cut-off Current IEBO VEB=I1V, Ic=90 _ _ 0.1 pwd DC Current Gain hrg (Note 1) | Vom=5V, Ic=5mA 80 _ 240 _ Transition Frequency fp VcE=5V, Ic=5mA 4 6 GHz Insertion Gain Sorel? oEeeY I=5mA, 7 11 _ dB Output Capacitance Cob Vcp=5V, Ip=0, f=1MHz 0.7 _ pF Reverse Transfer Capacitance Cre (Note 2)| _ 0.5 0.9 | pF . ; Vcp=5V, Ic=3mA, Collector-Base Time Constant CeTbb f=30MHz 5.5 10 ps (Note 1) : hpp Classification QO: 80~160, Y : 120~240 (Note 2) : Cre is measured by 3 terminal method with capacitance bridge. 6352SC5108 hFE Ic Cob, Cre VCB -) {pF) re (pF) ow a o Co Wig So iE 22 = ee STs) z <4 0.7 < ao 3 S< & eo 0.5 a ee a 5 0.3 5 z 5 os DQ Se 0.2 a Yorn =5V Be f=1MHz Ta = 25C mee Ta = 25C a> ot 1 2 9 6 7 10 20 30 50 70 100 SY Ol 0203 0607 1 2 3 #5& 7 10 COLLECTOR CURRENT Ic (mA) COLLECTOR-BASE VOLTAGE VcB (V) fp Ic Satel Ic 3 ~ -~ & a 2 & es pe = 3 a w 2 z < 8 o fe Zz z S oO e = we B a VCE =5V < Zz f=1GHz & Ta = 25C 1 2 3 Cn) 20-30 1 2 3 a ae 20 = 30 COLLECTOR CURRENT Ig (mA) COLLECTOR CURRENT Ic (mA) Saiel Saiel* - VCE INSERTION GAIN [Saiel (4B) INSERTION GAIN [Sgjel (dB) Ic =5mA f=1GHz Ta =28C 0.1 02 03 05 07 1 2 3 0 2 4 6 8 10 12 FREQUENCY f (GHz) COLLECTOR-EMITTER VOLTAGE Vcr (V} 6362805108 Po - Ta COLLECTOR POWER DISSIPATION Po (mW) 0 25 50 15 100 125 160 AMBIENT TEMPERATURE Ta (C) S-Parameter Zo =500, Ta=25C Veg =5V, Ic =5mA frequency S11 $21 $12 S22 (MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.684 47.0 10.116 136.8 0.049 63.1 0.765 29.5 400 0.438 -79.2 7.260 112.9 0.072 56.5 0.553 37.8 600 0.301 101.2 5.388 99.1 0.090 56.5 0.452 39.1 800 0.226 -119.2 4,227 90.0 0.107 57.6 0.402 39.0 1000 0.182 136.2 3.494 82.7 0.124 58.8 0.374 - 38.9 1200 0.159 153.3 2.988 76.9 0.142 59.6 0.359 39.4 1400 0.147 -170.3 2.632 V1.2 0.163 59.9 0.348 -40.7 1600 0.145 174.4 2.345 66.0 0.182 59.2 0.339 43.2 1800 0.149 162.6 2.128 61.4 0.200 538.4 0.329 46.3 2000 0.161 150.9 1.967 57.1 0.219 58.1 0.318 49.5 6372805108 5V 5mA 25C S2ie Vou Ic Ta 5Vv Ic=5mA 25C (ONIT : QQ) Sile VCE Ta 7 5 Sis a ie Vig =5V 5mA 25C (UNIT : 2) S22e VCE Ic Ta =5V 5mA 25C S12 VCE Ic= Ta 638