APL602J 600V 43A 0.125 LINEAR MOSFET S S Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). 27 2 T- D G SO "UL Recognized" ISOTOP (R) * Higher FBSOA * Popular SOT-227 Package D * Higher Power Dissipation G S MAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. APL602J UNIT Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25C 43 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 565 Watts Linear Derating Factor 4.52 W/C Symbol VDSS PD TJ,TSTG Parameter 1 TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 43 1 Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts -55 to 150 Operating and Storage Junction Temperature Range 1 Amps 172 Amps 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 600 Volts ID(ON) On State Drain Current 43 Amps IDSS IGSS VGS(TH) (VDS > I D(ON) x R DS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 MAX 0.125 (VGS = 12V, 21.5A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) 250 (VDS = VGS, ID = 2.5mA) 100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Ohms A Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage UNIT 8-2003 RDS(ON) 2 TYP 050-5895 Rev C Symbol APL602J DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 7600 9000 Coss Output Capacitance VDS = 25V 1280 1810 Reverse Transfer Capacitance f = 1 MHz 620 930 Turn-on Delay Time VGS = 15V 13 26 Crss td(on) tr Rise Time td(off) Turn-off Delay Time tf Fall Time VDD = 0.5 VDSS 24 48 ID = 43A @ 25C 58 87 RG = 0.6 14 17 TYP MAX UNIT pF ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case .22 RJA Junction to Ambient 40 C/W 2500 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Volts 10 Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.24mH, R = 25, Peak I = 43A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.20 0.7 0.15 0.5 Note: 0.10 PDM ZJC, THERMAL IMPEDANCE (C/W) 0.25 t1 0.3 t2 0.05 0.1 0.05 0 10-5 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION RC MODEL Junction temp. ( "C) 8-2003 Power (Watts) 050-5895 Rev C UNIT 0.0520 0.0261F 0.155 0.423F 0.0126 67.451F Case temperature FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL 10 lb*in Typical Performance Curves APL602J 120 VGS=10V, 15 V VGS=10, 15V 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 ID, DRAIN CURRENT (AMPERES) 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 5.5 V 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH OUTPUT CHARACTERISTICS 80 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 40 TJ = +125C 20 TJ = -55C TJ = +25C 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW OUTPUT CHARACTERISTICS 1.30 V 1.20 VGS=10V 1.10 1.00 0.90 VGS=20V 0.80 0.70 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 0 BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 45 ID, DRAIN CURRENT (AMPERES) NORMALIZED TO = 10V @ 21.5A GS 40 35 30 25 20 15 10 05 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 8-2003 ID, DRAIN CURRENT (AMPERES) 5.5 V 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 050-5895 Rev C ID, DRAIN CURRENT (AMPERES) 120 D = 21.5A GS = 12V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) I V 2.0 1.5 1.0 0.5 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 172 30,000 OPERATION HERE LIMITED BY RDS (ON) 100S 10 10,000 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 1.1 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 100 1mS 5 10mS 100mS 1 .1 APL602J 1.2 2.5 TC =+25C TJ =+150C SINGLE PULSE DC Line Ciss 5,000 Coss 1,000 Crss 500 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 050-5895 Rev C 8-2003 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.