FQP30N06L
Rev. A1. May 2001©2001 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 400µH, IAS = 32A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 32A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300us, Duty cycle ≤2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit i ons Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA60 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Vo ltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA
VDS = 48 V, TC = 150°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA1.0 -- 2.5 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 16 A
VGS = 5 V , ID =16 A --
-- 0.027
0.035 0.035
0.045 Ω
gFS Forward Transconductance VDS = 25 V, ID = 16 A -- 24 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 800 1040 pF
Coss Output Capacitance -- 270 350 pF
Crss Reverse Transfer Capacit ance -- 50 65 pF
Switching Characteristics
td(on) Turn-On Delay T ime VDD = 30 V, ID = 16 A,
RG = 25 Ω
-- 15 40 ns
trTurn-On Rise Time -- 210 430 ns
td(off) Turn-Off Del a y Time -- 60 130 n s
tfTurn-Off Fa ll Time -- 110 230 n s
QgTotal Gate Ch arge VDS = 48 V, ID = 32 A,
VGS = 5 V
-- 15 20 nC
Qgs Gate-Source Charge -- 3.5 -- nC
Qgd Gate-Drain Charge -- 8.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 32 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 128 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 32 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, I S = 32 A,
dIF / dt = 100 A/µs
-- 60 -- ns
Qrr Reverse Recovery Charge -- 90 -- nC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
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