ACS758xCB Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor Features and Benefits Description Industry-leading noise performance through proprietary amplifier and filter design techniques Integrated shield greatly reduces capacitive coupling from current conductor to die due to high dV/dt signals, and prevents offset drift in high-side, high voltage applications Total output error improvement through gain and offset trim over temperature Small package size, with easy mounting capability Monolithic Hall IC for high reliability Ultra-low power loss: 100 internal conductor resistance Galvanic isolation allows use in economical, high-side current sensing in high voltage systems 3.0 to 5.5 V, single supply operation The Allegro(R) ACS758 family of current sensor ICs provides economical and precise solutions for AC or DC current sensing. Typical applications include motor control, load detection and management, power supply and DC-to-DC converter control, inverter control, and overcurrent fault detection. The device consists of a precision, low-offset linear Hall circuit with a copper conduction path located near the die. Applied current flowing through this copper conduction path generates a magnetic field which the Hall IC converts into a proportional voltage. Device accuracy is optimized through the close proximity of the magnetic signal to the Hall transducer. A precise, proportional output voltage is provided by the low-offset, chopper-stabilized BiCMOS Hall IC, which is programmed for accuracy at the factory. Continued on the next page... High level immunity to current conductor dV/dt and stray electric fields, offered by Allegro proprietary integrated shield technology, guarantees low output voltage ripple and low offset drift in high-side, high voltage applications. TUV America Certificate Number: U8V 09 05 54214 021 Package: 5-pin package The output of the device has a positive slope (>VCC / 2) when an increasing current flows through the primary copper conduction path (from terminal 4 to terminal 5), which is the path used for current sampling. The internal resistance of this conductive path is 100 typical, providing low power loss. The thickness of the copper conductor allows survival of the device at high overcurrent conditions. The terminals of the PSS Leadform PFF Leadform Continued on the next page... Additional leadforms available for qualifying volumes Typical Application +3.3 or 5 V 4 VCC IP+ ACS758 IP GND 5 1 CBYP 0.1 F 2 CF IP- VIOUT 3 RF VOUT Application 1. The ACS758 outputs an analog signal, VOUT , that varies linearly with the uni- or bi-directional AC or DC primary sampled current, IP , within the range specified. CF is for optimal noise management, with values that depend on the application. ACS758-DS, Rev. 6 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB Features and Benefits (continued) 120 kHz typical bandwidth 3 s output rise time in response to step input current Output voltage proportional to AC or DC currents Factory-trimmed for accuracy Extremely stable output offset voltage Nearly zero magnetic hysteresis Description (continued) conductive path are electrically isolated from the signal leads (pins 1 through 3). This allows the ACS758 family of sensor ICs to be used in applications requiring electrical isolation without the use of opto-isolators or other costly isolation techniques. The device is fully calibrated prior to shipment from the factory. The ACS758 family is lead (Pb) free. All leads are plated with 100% matte tin, and there is no Pb inside the package. The heavy gauge leadframe is made of oxygen-free copper. Selection Guide Package Part Number1 Terminals Signal Pins Primary Sampled Current , IP (A) Sensitivity Sens (Typ.) (mV/A) Current Directionality ACS758LCB-050B-PFF-T Formed Formed 50 40. Bidirectional ACS758LCB-050U-PFF-T Formed Formed 50 60. Unidirectional ACS758LCB-100B-PFF-T Formed Formed 100 20. Bidirectional ACS758LCB-100U-PFF-T Formed Formed 100 40. Unidirectional ACS758KCB-150B-PFF-T Formed Formed 150 13.3 Bidirectional ACS758KCB-150U-PFF-T Formed Formed 150 26.7 Unidirectional ACS758KCB-150B-PSS-T Straight Straight 150 13.3 Bidirectional ACS758ECB-200B-PFF-T Formed Formed 200 10. Bidirectional ACS758ECB-200U-PFF-T Formed Formed 200 20. Unidirectional ACS758ECB-200B-PSS-T Straight Straight 200 10. Bidirectional 1Additional TOP (C) Packing2 -40 to 150 -40 to 125 34 pieces per tube -40 to 85 leadform options available for qualified volumes. for additional packing options. 2Contact Allegro Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 2 ACS758xCB Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor Absolute Maximum Ratings Characteristic Symbol Notes Rating Units Forward Supply Voltage VCC 8 V Reverse Supply Voltage VRCC -0.5 V Forward Output Voltage VIOUT 28 V Reverse Output Voltage VRIOUT -0.5 V Output Source Current IOUT(Source) VIOUT to GND 3 mA IOUT(Sink) VCC to VIOUT 1 mA Output Sink Current Nominal Operating Ambient Temperature Maximum Junction Storage Temperature TOP Range E -40 to 85 C Range K -40 to 125 C Range L -40 to 150 C TJ(max) 165 C Tstg -65 to 165 C Rating Unit 3000 VAC VDC or Vpk Isolation Characteristics Characteristic Symbol Notes Dielectric Strength Test Voltage* VISO Agency type-tested for 60 seconds per UL standard 60950-1, 2nd Edition Working Voltage for Basic Isolation VWFSI For basic (single) isolation per UL standard 60950-1, 2nd Edition 990 700 Vrms For reinforced (double) isolation per UL standard 60950-1, 2nd Edition 636 VDC or Vpk 450 Vrms Working Voltage for Reinforced Isolation VWFRI * Allegro does not conduct 60-second testing. It is done only during the UL certification process. Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 3 ACS758xCB Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor Thermal Characteristics may require derating at maximum conditions Characteristic Package Thermal Resistance Symbol RJA Test Conditions* Value Unit Mounted on the Allegro evaluation board with 2800 mm2 (1400 mm2 on component side and 1400 mm2 on opposite side) of 4 oz. copper connected to the primary leadframe and with thermal vias connecting the copper layers. Performance is based on current flowing through the primary leadframe and includes the power consumed by the PCB. 7 C/W Rating Units 1200 A *Additional thermal information available on the Allegro website Typical Overcurrent Capabilities1,2 Characteristic Symbol Notes TA = 25C, 1s duration, 1% duty cycle Overcurrent IPOC TA = 85C, 1s duration, 1% duty cycle 900 A TA = 150C, 1s duration, 1% duty cycle 600 A 1Test 2For was done with Allegro evaluation board. The maximum allowed current is limited by TJ(max) only. more overcurrent profiles, please see FAQ on the Allegro website, www.allegromicro.com. Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 4 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB Functional Block Diagram +3.3 to 5 V VCC IP+ Gain Filter Dynamic Offset Cancellation To all subcircuits Amp VIOUT Out 0.1 F Gain Temperature Coefficient Offset Offset Temperature Coefficient Trim Control GND IP- Pin-out Diagram IP+ IP- 4 3 VIOUT 2 GND 1 VCC 5 Terminal List Table Number Name 1 VCC Device power supply terminal Description 2 GND Signal ground terminal 3 VIOUT 4 IP+ Terminal for current being sampled 5 IP- Terminal for current being sampled Analog output signal Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 5 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB COMMON OPERATING CHARACTERISTICS1 valid at TOP = -40C to 150C and VCC = 5 V, unless otherwise specified Characteristic Supply Voltage2 Symbol Test Conditions VCC Min. Typ. Max. Units 3 5.0 5.5 V Supply Current ICC Output open - 10 13.5 mA Power-On Delay tPOD TA = 25C - 10 - s - 3 - s Rise Time3 Propagation Delay tr Time3 Response Time Internal Bandwidth4 tPROP tRESPONSE BWi IP step = 60% of IP+, 10% to 90% rise time, TA = 25C, COUT = 0.47 nF TA = 25C, COUT = 0.47 nF - 1 - s Measured as sum of tPROP and tr - 4 - s -3 dB; TA = 25C, COUT = 0.47 nF - 120 - kHz Output Load Resistance RLOAD(MIN) VIOUT to GND 4.7 - - k Output Load Capacitance CLOAD(MAX) VIOUT to GND - - 10 nF Primary Conductor Resistance Symmetry3 RPRIMARY ESYM VIOUT(QBI) Quiescent Output Voltage5 Ratiometry3 VIOUT(QUNI) VRAT TA = 25C - 100 - Over half-scale of Ip 99 100 101 % Bidirectional variant, IP = 0 A, TA = 25C - VCC/2 - V - 0.6 - V - 100 - % Unidirectional variant, IP = 0 A, TA = 25C, VIOUT(QUNI) is ratiometric to VCC VCC = 4.5 to 5.5 V 1Device is factory-trimmed at 5 V, for optimal accuracy. are programmed for maximum accuracy at 5.0 V VCC levels. The device contains ratiometry circuits that accurately alter the 0 A Output Voltage and Sensitivity level of the device in proportion to the applied VCC level. However, as a result of minor nonlinearities in the ratiometry circuit additional output error will result when VCC varies from the 5 V VCC level. Customers that plan to operate the device from a 3.3 V regulated supply should contact their local Allegro sales representative regarding expected device accuracy levels under these bias conditions. 3See Characteristic Definitions section of this datasheet. 4Calculated using the formula BW = 0.35 / t . i r 5V IOUT(Q) may drift over the lifetime of the device by as much as 25 mV. 2Devices Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 6 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB X050B PERFORMANCE CHARACTERISTICS1: Characteristic Primary Sampled Current Noise2 Min. Typ. Max. -50 - 50 A - 40 - mV/A Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 150C - 39.4 - mV/A Sens(TOP)LT Full scale of IP applied for 5 ms,TOP = -40C to 25C - 41 - mV/A TA= 25C, 10 nF on VIOUT pin to GND - 10 - mV Up to full scale of IP , IP applied for 5 ms -1 - 1 % IP = 0 A, TA = 25C - 5 - mV VOE(TOP)HT IP = 0 A, TOP = 25C to 150C - 15 - mV VOE(TOP)LT IP = 0 A, TOP = -40C to 25C - 35 - mV VNOISE Nonlinearity ELIN VOE(TA) Electrical Offset Voltage3 Magnetic Offset Error Total Output Error4 Test Conditions IP SensTA Sensitivity TOP = -40C to 150C, VCC = 5 V, unless otherwise specified Symbol Full scale of IP applied for 5 ms, TA = 25C Units IERROM IP = 0 A, TA = 25C, after excursion of 50 A - 100 - mA ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25C to 150C - -1.2 - % ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = -40C to 25C - 2 - % Typ. Max. Units 0 - 50 A - 60 - mV/A 1See Characteristic Performance Data page for parameter distributions over temperature range. 23 sigma noise voltage. 3V OE(TOP) drift is referred to ideal VIOUT(Q) = 2.5 V. 4Percentage of I . Output filtered. P X050U PERFORMANCE CHARACTERISTICS1: Characteristic Primary Sampled Current Noise2 Nonlinearity Magnetic Offset Error Total Output Error4 Full scale of IP applied for 5 ms, TA = 25C Min. Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 150C - 59 - mV/A Sens(TOP)LT Full scale of IP applied for 5 ms,TOP = -40C to 25C - 61 - mV/A TA= 25C, 10 nF on VIOUT pin to GND - 15 - mV Up to full scale of IP , IP applied for 5 ms -1 - 1 % IP = 0 A, TA = 25C - 5 - mV VOE(TOP)HT IP = 0 A, TOP = 25C to 150C - 20 - mV VOE(TOP)LT IP = 0 A, TOP = -40C to 25C - 40 - mV VNOISE ELIN VOE(TA) Electrical Offset Voltage3 Test Conditions IP SensTA Sensitivity TOP = -40C to 150C, VCC = 5 V, unless otherwise specified Symbol IERROM IP = 0 A, TA = 25C, after excursion of 50 A - 100 - mA ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25C to 150C - -1.2 - % ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = -40C to 25C - 2 - % 1See Characteristic Performance Data page for parameter distributions over temperature range. 23 sigma noise voltage. 3V OE(TOP) drift is referred to ideal VIOUT(Q) = 0.6 V. 4Percentage of I . Output filtered. P Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 7 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB X100B PERFORMANCE CHARACTERISTICS1: Characteristic Primary Sampled Current Noise2 Min. Typ. Max. -100 - 100 A - 20 - mV/A Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 150C - 19.75 - mV/A Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = -40C to 25C - 20.5 - mV/A mV VNOISE Nonlinearity Magnetic Offset Error Total Output Error4 Full scale of IP applied for 5 ms, TA = 25C TA= 25C, 10 nF on VIOUT pin to GND Units - 6 - -1.25 - 1.25 % - 5 - mV VOE(TOP)HT IP = 0 A, TOP = 25C to 150C - 20 - mV VOE(TOP)LT IP = 0 A, TOP = -40C to 25C - 20 - mV ELIN VOE(TA) Electrical Offset Voltage3 Test Conditions IP SensTA Sensitivity TOP = -40C to 150C, VCC = 5 V, unless otherwise specified Symbol Up to full scale of IP , IP applied for 5 ms IP = 0 A, TA = 25C IERROM IP = 0 A, TA = 25C, after excursion of 100 A - 150 - mA ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25C to 150C - -1.3 - % ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = -40C to 25C - 2.4 - % Typ. Max. Units 1See Characteristic Performance Data page for parameter distributions over temperature range. 23 sigma noise voltage. 3V OE(TOP) drift is referred to ideal VIOUT(Q) = 2.5 V. 4Percentage of I . Output filtered. P X100U PERFORMANCE CHARACTERISTICS1: Characteristic Primary Sampled Current Noise2 Nonlinearity Magnetic Offset Error Total Output Error4 Min. 0 - 100 A - 40 - mV/A Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 150C - 39.5 - mV/A Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = -40C to 25C - 41 - mV/A mV VNOISE Full scale of IP applied for 5 ms, TA = 25C - 12 - -1.25 - 1.25 % - 5 - mV VOE(TOP)HT IP = 0 A, TOP = 25C to 150C - 20 - mV VOE(TOP)LT IP = 0 A, TOP = -40C to 25C - 20 - mV ELIN VOE(TA) Electrical Offset Voltage3 Test Conditions IP SensTA Sensitivity TOP = -40C to 150C, VCC = 5 V, unless otherwise specified Symbol TA= 25C, 10 nF on VIOUT pin to GND Up to full scale of IP , IP applied for 5 ms IP = 0 A, TA = 25C IERROM IP = 0 A, TA = 25C, after excursion of 100 A - 150 - mA ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25C to 150C - -1.3 - % ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = -40C to 25C - 2.4 - % 1See Characteristic Performance Data page for parameter distributions over temperature range. 23 sigma noise voltage. 3V OE(TOP) drift is referred to ideal VIOUT(Q) = 0.6 V. 4Percentage of I . Output filtered. P Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 8 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB X150B PERFORMANCE CHARACTERISTICS1: Characteristic Primary Sampled Current Noise2 Magnetic Offset Error Total Output Error4 Typ. Max. - 150 Units A - 13.3 - mV/A - 13.1 - mV/A Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = -40C to 25C - 13.5 - mV/A mV - 4 - -1 - 1 % - 5 - mV VOE(TOP)HT IP = 0 A, TOP = 25C to 125C - 14 - mV VOE(TOP)LT IP = 0 A, TOP = -40C to 25C - 24 - mV ELIN VOE(TA) Electrical Offset Voltage3 Full scale of IP applied for 5 ms, TA = 25C Min. -150 Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 125C VNOISE Nonlinearity Test Conditions IP SensTA Sensitivity TOP = -40C to 125C, VCC = 5 V, unless otherwise specified Symbol TA= 25C, 10 nF on VIOUT pin to GND Up to full scale of IP , IP applied for 5 ms IP = 0 A, TA = 25C IERROM IP = 0 A, TA = 25C, after excursion of 150 A - 205 - mA ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25C to 125C - -1.8 - % ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = -40C to 25C - 1.6 - % Typ. Max. Units 0 - 150 A - 26.6 - mV/A 1See Characteristic Performance Data page for parameter distributions over temperature range. 23 sigma noise voltage. 3V OE(TOP) drift is referred to ideal VIOUT(Q) = 2.5 V. 4Percentage of I . Output filtered. P X150U PERFORMANCE CHARACTERISTICS1: Characteristic Primary Sampled Current Noise2 Nonlinearity Magnetic Offset Error Total Output Error4 Full scale of IP applied for 5 ms, TA = 25C Min. Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 125C - 26.6 - mV/A Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = -40C to 25C - 27.4 - mV/A mV VNOISE - 8 - -1 - 1 % - 5 - mV VOE(TOP)HT IP = 0 A, TOP = 25C to 125C - 14 - mV VOE(TOP)LT IP = 0 A, TOP = -40C to 25C - 24 - mV ELIN VOE(TA) Electrical Offset Voltage3 Test Conditions IP SensTA Sensitivity TOP = -40C to 125C, VCC = 5 V, unless otherwise specified Symbol TA= 25C, 10 nF on VIOUT pin to GND Up to full scale of IP , IP applied for 5 ms IP = 0 A, TA = 25C IERROM IP = 0 A, TA = 25C, after excursion of 150 A - 205 - mA ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25C to 125C - -1.8 - % ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = -40C to 25C - 1.6 - % 1See Characteristic Performance Data page for parameter distributions over temperature range. 23 sigma noise voltage. 3V OE(TOP) drift is referred to ideal VIOUT(Q) = 0.6 V. 4Percentage of I . Output filtered. P Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 9 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB X200B PERFORMANCE CHARACTERISTICS1: Characteristic Primary Sampled Current Noise2 Magnetic Offset Error Total Output Error4 Typ. Max. - 200 Units A - 10 - mV/A - 9.88 - mV/A Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = -40C to 25C - 10.13 - mV/A mV ELIN VOE(TA) Electrical Offset Voltage3 Full scale of IP applied for 5 ms, TA = 25C Min. -200 Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 85C VNOISE Nonlinearity Test Conditions IP SensTA Sensitivity TOP = -40C to 85C, VCC = 5 V, unless otherwise specified Symbol TA= 25C, 10 nF on VIOUT pin to GND Up to full scale of IP , IP applied for 5 ms IP = 0 A, TA = 25C - 3 - -1 - 1 % - 5 - mV VOE(TOP)HT IP = 0 A, TOP = 25C to 85C - 15 - mV VOE(TOP)LT IP = 0 A, TOP = -40C to 25C - 25 - mV IERROM IP = 0 A, TA = 25C, after excursion of 200 A - 230 - mA ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25C to 85C - -1.2 - % ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = -40C to 25C - 1.2 - % Typ. Max. Units 0 - 200 A - 20 - mV/A 1See Characteristic Performance Data page for parameter distributions over temperature range. 23 sigma noise voltage. 3V OE(TOP) drift is referred to ideal VIOUT(Q) = 2.5 V . 4Percentage of I . Output filtered. P X200U PERFORMANCE CHARACTERISTICS1: Characteristic Primary Sampled Current Noise2 Nonlinearity Magnetic Offset Error Total Output Error4 Full scale of IP applied for 5 ms, TA = 25C Min. Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25C to 85C - 19.7 - mV/A Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = -40C to 25C - 20.3 - mV/A mV VNOISE ELIN VOE(TA) Electrical Offset Voltage3 Test Conditions IP SensTA Sensitivity TOP = -40C to 85C, VCC = 5 V, unless otherwise specified Symbol TA= 25C, 10 nF on VIOUT pin to GND Up to full scale of IP , IP applied for 5 ms IP = 0 A, TA = 25C - 6 - -1 - 1 % - 5 - mV VOE(TOP)HT IP = 0 A, TOP = 25C to 85C - 20 - mV VOE(TOP)LT IP = 0 A, TOP = -40C to 25C - 35 - mV IERROM IP = 0 A, TA = 25C, after excursion of 200 A - 230 - mA ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25C to 85C - -1.2 - % ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = -40C to 25C - 1.2 - % 1See Characteristic Performance Data page for parameter distributions over temperature range. 23 sigma noise voltage. 3V OE(TOP) drift is referred to ideal VIOUT(Q) = 0.6 V . 4Percentage of I . Output filtered. P Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 10 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB Characteristic Performance Data Data taken using the ACS758LCB-50B Accuracy Data Electrical Offset Voltage versus Ambient Temperature 30 42.0 20 42.5 Sens (mV/A) 10 VOE (mV) Sensitivity versus Ambient Temperature 0 -10 -20 41.0 40.5 40.0 39.5 -30 39.0 -40 -50 -50 -25 0 25 50 75 100 125 38.5 -50 150 -25 0 25 TA (C) 0.40 100.35 0.35 100.30 0.30 100.25 0.25 0.20 100.10 100.05 0.05 100.00 25 50 75 100 125 99.95 -50 150 -25 0 25 TA (C) Magnetic Offset Error versus Ambient Temperature 50 75 100 125 150 Total Output Error versus Ambient Temperature 6 5 120 4 100 3 80 2 ETOT (%) IERROM (mA) 150 TA (C) 140 60 40 1 0 -1 -2 20 0 -50 125 100.15 0.10 0 100 100.20 0.15 -25 75 Symmetry versus Ambient Temperature 100.40 ESYM (%) ELIN (%) Nonlinearity versus Ambient Temperature 0.45 0 -50 50 TA (C) -3 -25 0 25 50 75 100 125 -4 -50 150 -25 0 25 50 75 100 125 150 TA (C) TA (C) Typical Maximum Limit Mean Typical Minimum Limit Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 11 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB Characteristic Performance Data Data taken using the ACS758LCB-100B Accuracy Data Electrical Offset Voltage versus Ambient Temperature 21.2 20 21.0 15 20.8 Sens (mV/A) 25 10 VOE (mV) Sensitivity versus Ambient Temperature 5 0 -5 20.6 20.4 20.2 20.0 -10 19.8 -15 19.6 -20 19.4 -25 -50 -25 0 25 50 75 100 125 19.2 -50 150 -25 0 25 TA (C) 100 125 150 Symmetry versus Ambient Temperature 0.40 100.6 0.35 100.5 0.30 100.4 ESYM (%) ELIN (%) 75 TA (C) Nonlinearity versus Ambient Temperature 0.25 0.20 0.15 100.3 100.2 100.1 100.0 0.10 99.9 0.05 99.8 0 -50 -25 0 25 50 75 100 125 99.7 -50 150 -25 0 25 TA (C) Magnetic Offset Error versus Ambient Temperature 180 170 ETOT (%) 160 150 130 120 110 -25 0 25 50 75 100 125 150 Total Output Error versus Ambient Temperature 190 100 -50 50 TA (C) 200 IERROM (mA) 50 75 100 125 150 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -50 -25 0 25 50 75 100 125 150 TA (C) TA (C) Typical Maximum Limit Mean Typical Minimum Limit Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 12 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB Characteristic Performance Data Data taken using the ACS758KCB-150B Accuracy Data Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature 20 14.0 15 13.8 Sens (mV/A) 10 VOE (mV) 5 0 -5 -10 -15 13.6 13.4 13.2 13.0 -20 12.8 -25 -30 -60 -40 -20 0 20 40 60 80 100 120 12.6 -60 140 -40 -20 0 20 TA (C) Nonlinearity versus Ambient Temperature 80 100 120 140 Symmetry versus Ambient Temperature 100.6 0.25 100.5 02.0 ESYM (%) ELIN (%) 60 100.7 0.30 0.15 100.4 100.3 100.2 100.1 0.10 100.0 0.05 99.9 0 -60 -40 -20 0 20 40 60 80 100 120 99.8 -60 140 -40 -20 0 20 TA (C) Magnetic Offset Error versus Ambient Temperature ETOT (%) 200 150 100 50 0 -40 -20 0 20 40 60 80 100 120 140 Total Output Error versus Ambient Temperature 250 -60 40 TA (C) 300 IERROM (mA) 40 TA (C) 60 80 100 120 140 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 -60 -40 -20 0 20 40 60 80 100 120 140 TA (C) TA (C) Typical Maximum Limit Mean Typical Minimum Limit Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 13 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB Characteristic Performance Data Data taken using the ACS758ECB-200B Accuracy Data 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -60 Sensitivity versus Ambient Temperature 10.4 10.3 Sens (mV/A) VOE (mV) Electrical Offset Voltage versus Ambient Temperature 10.2 10.1 10.0 9.9 9.8 9.7 9.6 -40 -20 0 20 40 60 80 100 120 9.5 -60 140 -40 -20 0 20 TA (C) 100 120 140 100.6 100.4 100.2 100.0 99.8 99.6 -40 -20 0 20 40 60 80 100 120 140 -60 -40 -20 0 20 40 60 80 100 120 140 TA (C) Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature 4 350 3 300 2 250 1 200 ETOT (%) IERROM (mA) 80 Symmetry versus Ambient Temperature TA (C) 150 100 0 -1 -2 -3 -4 50 0 -60 60 100.8 ESYM (%) ELIN (%) Nonlinearity versus Ambient Temperature 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -0.02 -0.04 -0.06 -60 40 TA (C) -5 -40 -20 0 20 40 60 80 100 120 -6 -60 140 -40 -20 0 20 40 60 80 100 120 140 TA (C) TA (C) Typical Maximum Limit Mean Typical Minimum Limit Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 14 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB Characteristic Performance Data Data taken using the ACS758LCB-100 Timing Data Rise Time Propagation Delay Time IP (20 A/div.) IP (20 A/div.) VIOUT (0.5 V/div.) VIOUT (0.5 V/div.) 997 ns 2.988 s t (2 s/div.) t (2 s/div.) Response Time Power-on Delay VCC IP (20 A/div.) VIOUT (0.5 V/div.) 9.034 s VIOUT (1 V/div.) (IP = 60 A DC) 3.960 s t (2 s/div.) t (2 s/div.) Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 15 ACS758xCB Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor Characteristic Definitions Definitions of Accuracy Characteristics Sensitivity (Sens). The change in device output in response to a 1 A change through the primary conductor. The sensitivity is the product of the magnetic circuit sensitivity (G / A) and the linear IC amplifier gain (mV/G). The linear IC amplifier gain is programmed at the factory to optimize the sensitivity (mV/A) for the half-scale current of the device. Noise (VNOISE). The noise floor is derived from the thermal and shot noise observed in Hall elements. Dividing the noise (mV) by the sensitivity (mV/A) provides the smallest current that the device is able to resolve. Nonlinearity (ELIN). The degree to which the voltage output from the IC varies in direct proportion to the primary current through its half-scale amplitude. Nonlinearity in the output can be attributed to the saturation of the flux concentrator approaching the half-scale current. The following equation is used to derive the linearity: { [ 100 1- gain x % sat ( VIOUT_half-scale amperes -VIOUT(Q) ) 2 (VIOUT_quarter-scale amperes - VIOUT(Q) ) [{ where gain = the gain variation as a function of temperature changes from 25C, % sat = the percentage of saturation of the flux concentrator, which becomes significant as the current being sampled approaches half-scale IP , and VIOUT_half-scale amperes = the output voltage (V) when the sampled current approximates half-scale IP . Symmetry (ESYM). The degree to which the absolute voltage output from the IC varies in proportion to either a positive or negative half-scale primary current. The following equation is used to derive symmetry: 100 VIOUT_+ half-scale amperes - VIOUT(Q) VIOUT(Q) - VIOUT_-half-scale amperes Ratiometry. The device features a ratiometric output. This means that the quiescent voltage output, VIOUTQ, and the magnetic sensitivity, Sens, are proportional to the supply voltage, VCC. The ratiometric change (%) in the quiescent voltage output is defined as: $VIOUTQ($V) = VIOUTQ(VCC) VIOUTQ(5V) VCC 5V s % and the ratiometric change (%) in sensitivity is defined as: $Sens($V = Sens(VCC VCC Sens(V 5V s % Quiescent output voltage (VIOUT(Q)). Quiescent output voltage (VIOUT(Q) ). The output of the device when the primary current is zero. For bidirectional devices, it nominally remains at VCC 2. Thus, VCC = 5 V translates into VIOUT(QBI) = 2.5 V. For unidirectional devices, it nominally remains at 0.12 x VCC . Thus, VCC = 5 V translates into VIOUT(QUNI) = 0.6 V. Variation in VIOUT(Q) can be attributed to the resolution of the Allegro linear IC quiescent voltage trim, magnetic hysteresis, and thermal drift. Electrical offset voltage (VOE). The deviation of the device output from its ideal quiescent value of VCC 2 for bidirectional and 0.1 x VCC for unidirectional devices, due to nonmagnetic causes. Magnetic offset error (IERROM). The magnetic offset is due to the residual magnetism (remnant field) of the core material. The magnetic offset error is highest when the magnetic circuit has been saturated, usually when the device has been subjected to a full-scale or high-current overload condition. The magnetic offset is largely dependent on the material used as a flux concentrator. The larger magnetic offsets are observed at the lower operating temperatures. Total Output Error (ETOT). The maximum deviation of the actual output from its ideal value, also referred to as accuracy, illustrated graphically in the output voltage versus current chart on the following page. ETOT is divided into four areas: 0 A at 25C. Accuracy at the zero current flow at 25C, without the effects of temperature. 0 A over temperature. Accuracy at the zero current flow including temperature effects. Half-scale current at 25C. Accuracy at the the half-scale current at 25C, without the effects of temperature. Half-scale current over temperature. Accuracy at the halfscale current flow including temperature effects. Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 16 ACS758xCB Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor Definitions of Dynamic Response Characteristics Power-On Time (tPO). When the supply is ramped to its operating voltage, the device requires a finite time to power its internal components before responding to an input magnetic field. Power-On Time, tPO , is defined as the time it takes for the output voltage to settle within 10% of its steady state value under an applied magnetic field, after the power supply has reached its minimum specified operating voltage, VCC(min), as shown in the chart at right. Rise time (tr). The time interval between a) when the device reaches 10% of its full scale value, and b) when it reaches 90% of its full scale value. The rise time to a step response is used to derive the bandwidth of the device, in which (-3 dB) = 0.35 / tr. Both tr and tRESPONSE are detrimentally affected by eddy current losses observed in the conductive IC ground plane. Output Voltage versus Sampled Current Total Output Error at 0 A and at Half-Scale Current Accuracy Over $Temp erature Increasing VIOUT(V) Accuracy 25C Only Bidirectional I (%) Average VIOUT Primary Current 90 Accuracy Over $Temp erature Transducer Output Accuracy 25C Only 10 0 Rise Time, tr IP(min) t -IP (A) +IP (A) Half Scale IP(max) 0A Decreasing VIOUT(V) Propagation delay (tPROP). The time required for the device output to reflect a change in the primary current signal. Propagation delay is attributed to inductive loading within the linear IC package, as well as in the inductive loop formed by the primary conductor geometry. Propagation delay can be considered as a fixed time offset and may be compensated. I (%) Accuracy 25C Only Accuracy Over $Temp erature Accuracy 25C Only Primary Current Unidirectional Average VIOUT 90 Accuracy Over $Temp erature Transducer Output 0 Propagation Time, tPROP Accuracy Over $Temp erature Increasing VIOUT(V) Accuracy 25C Only t -IP (A) +IP (A) Full Scale 0A IP(max) Decreasing VIOUT(V) Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 17 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB Chopper Stabilization Technique Chopper Stabilization is an innovative circuit technique that is used to minimize the offset voltage of a Hall element and an associated on-chip amplifier. Allegro patented a Chopper Stabilization technique that nearly eliminates Hall IC output drift induced by temperature or package stress effects. This offset reduction technique is based on a signal modulationdemodulation process. Modulation is used to separate the undesired DC offset signal from the magnetically induced signal in the frequency domain. Then, using a low-pass filter, the modulated DC offset is suppressed while the magnetically induced signal passes through the filter. The anti-aliasing filter prevents aliasing from happening in applications with high frequency signal com- ponents which are beyond the user's frequency range of interest. As a result of this chopper stabilization approach, the output voltage from the Hall IC is desensitized to the effects of temperature and mechanical stress. This technique produces devices that have an extremely stable Electrical Offset Voltage, are immune to thermal stress, and have precise recoverability after temperature cycling. This technique is made possible through the use of a BiCMOS process that allows the use of low-offset and low-noise amplifiers in combination with high-density logic integration and sample and hold circuits. Regulator Clock/Logic Sample and Hold Amp Anti-aliasing Filter Hall Element Low-Pass Filter Concept of Chopper Stabilization Technique Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 18 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB Package CB, 5-pin package, leadform PFF 0.5 R1 R3 0.5 B 14.00.2 3.00.2 1.500.10 4.00.2 5 4 4 R2 21.4 3 12 A 3.50.2 0.8 17.50.2 1.5 13.000.10 1.91 B Branded Face 4.400.10 PCB Layout Reference View 2.90.2 NNNNNNN TTT - AAA 55 1 2 +0.060 0.381 -0.030 3 10.000.10 3.50.2 LLLLLLL YYWW 1 7.000.10 C Standard Branding Reference View 0.510.10 1.90.2 N = Device part number T = Temperature code A = Amperage range L = Lot number Y = Last two digits of year of manufacture W = Week of manufacture = Supplier emblem For Reference Only; not for tooling use (reference DWG-9111, DWG-9110) Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown A Dambar removal intrusion B Perimeter through-holes recommended C Branding scale and appearance at supplier discretion Creepage distance, current terminals to signal pins: 7.25 mm Clearance distance, current terminals to signal pins: 7.25 mm Package mass: 4.63 g typical Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 19 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB Package CB, 5-pin package, leadform PSS 14.00.2 3.00.2 4.00.2 5 4 1.500.10 A NNNNNNN TTT - AAA 2.750.10 23.500.5 LLLLLLL 13.000.10 YYWW 4.400.10 1 Branded Face 3.180.10 11.00.05 +0.060 0.381 -0.030 1 2 3 10.000.10 B Standard Branding Reference View N = Device part number T = Temperature code A = Amperage range L = Lot number Y = Last two digits of year of manufacture W = Week of manufacture = Supplier emblem For Reference Only; not for tooling use (reference DWG-9111, DWG-9110) Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown 7.000.10 A Dambar removal intrusion B Branding scale and appearance at supplier discretion 0.510.10 1.90.2 Creepage distance, current terminals to signal pins: 7.25 mm Clearance distance, current terminals to signal pins: 7.25 mm Package mass: 4.63 g typical Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 20 Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor ACS758xCB Revision History Revision Revision Date Rev. 6 April 9, 2012 Description of Revision Update Unidirectional VIOUT(Q) and Isolation specifications Copyright (c)2008-2012, Allegro MicroSystems, Inc. The products described herein are protected by U.S. patents: 6,781,359; and 7,265,531. Allegro MicroSystems, Inc. reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current. Allegro's products are not to be used in life support devices or systems, if a failure of an Allegro product can reasonably be expected to cause the failure of that life support device or system, or to affect the safety or effectiveness of that device or system. The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, Inc. assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. For the latest version of this document, visit our website: www.allegromicro.com Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 21