NUP4304MR6, SZNUP4304MR6 Low Capacitance Diode Array for ESD Protection in Four Data Lines http://onsemi.com NUP4304MR6 is a micro-integrated device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). Features TSOP-6 CASE 318F Low Capacitance (1.5 pF Maximum Between I/O Lines) Single Package Integration Design Provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C Human Body Model = Class 3B Protection for IEC61000-4-2 (Level 4) 8.0 kV (Contact) 15 kV (Air) Ensures Data Line Speed and Integrity Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground PIN CONFIGURATION AND SCHEMATIC I/O 1 6 I/O VP 2 5 VN 1/O 3 4 I/O MARKING DIAGRAM Applications USB 1.1 and 2.0 Data Line Protection T1/E1 Secondary IC Protection T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection Video Line Protection Microcontroller Input Protection Base Stations I2C Bus Protection AEC-Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements This is a Pb-Free Device* LG MG G LG M G = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NUP4304MR6T1G TSOP-6 (Pb-Free) 3,000 / Tape & Reel SZNUP4304MR6T1G TSOP-6 (Pb-Free) 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 4 1 Publication Order Number: NUP4304MR6/D NUP4304MR6, SZNUP4304MR6 MAXIMUM RATINGS (Each Diode) (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 mA Non-Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S IFSM Peak Forward Surge Current A 2.0 1.0 0.5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction-to-Ambient Symbol Max Unit RqJA 556 C/W Lead Solder Temperature Maximum 10 Seconds Duration TL Junction Temperature TJ -40 to +150 C Storage Temperature Tstg -55 to +150 C C 260 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Each Diode) Characteristic Symbol Min Typ Max 70 - - - - - - - - 2.5 30 50 - 0.8 1.5 - 1.6 3 - - - - - - - - 715 855 1000 1250 Unit OFF CHARACTERISTICS V(BR) Reverse Breakdown Voltage (I(BR) = 100 mA) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) IR Capacitance (between I/O pins) (VR = 0 V, f = 1.0 MHz) CD Capacitance (between I/O pin and ground) (VR = 0 V, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://onsemi.com 2 Vdc mAdc pF pF mVdc NUP4304MR6, SZNUP4304MR6 Curves Applicable to Each Cathode IF, FORWARD CURRENT (mA) 100 TA = 85C 10 TA = -40C 1.0 TA = 25C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2 Figure 1. Forward Voltage 10 IR , REVERSE CURRENT (A) TA = 150C TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 0.001 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 2. Leakage Current CD, DIODE CAPACITANCE (pF) 1.75 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance http://onsemi.com 3 8 NUP4304MR6, SZNUP4304MR6 APPLICATIONS INFORMATION Option 2 Protection of four data lines and the supply rail using VCC as a reference and an external TVS diode. The NUP4304MR6 is a low capacitance diode array designed to protect sensitive electronics such as communications systems, computers, and computer peripherals against damage due to ESD events or transient overvoltage conditions. Because of its low capacitance, it can be used on high speed I/O data lines. The integrated design of the NUP4304MR6 offers surge rated, low capacitance steering diodes integrated in a single package (TSOP-6). If a transient condition occurs, the steering diodes will drive the transient to the positive rail of the power supply or to ground. I/O 1 I/O 2 VCC NUP4304MR6 Configuration Options The NUP4304MR6 is able to protect up to four data lines against transient overvoltage conditions by driving them to a fixed reference point for clamping purposes. The steering diodes will be forward biased whenever the voltage on the protected line exceeds the reference voltage (Vf or Vcc+Vf). The diodes will force the transient current to bypass the sensitive circuit. Data lines are connected at pins 1, 3, 4 and 6. The negative reference is connected at pin 5. This pin must be connected directly to ground by using a ground plane to minimize the PCB's ground inductance. It is very important to reduce the PCB trace lengths as much as possible to minimize parasitic inductance. VCC 2 5 3 4 2 5 3 4 I/O 4 If additional protection of the supply rail is desired, an external TVS diode may be added across VCC and ground. This will prevent overvoltage conditions on the supply rail protecting the supply and other circuits connected to it. Option 3 Protection of four data lines with bias and power supply isolation resistor. I/O 1 I/O 2 VCC 1 6 2 5 3 4 10 k I/O 1 I/O 2 6 6 I/O 3 Option 1 Protection of four data lines using Vcc as reference. 1 1 I/O 3 I/O 4 The NUP4304MR6 can be isolated from the power supply by connecting a series resistor between pin 2 and VCC. A 10 kW resistor is recommended for this application. This will maintain bias on the internal steering diodes, reducing their capacitance. I/O 3 I/O 4 For this configuration, connect pin 2 directly to the positive supply rail (Vcc), the data lines are referenced to the supply voltage. Biasing of the steering diodes reduces their capacitance. http://onsemi.com 4 NUP4304MR6, SZNUP4304MR6 Option 4 Protection of four data lines without biasing of the internal steering diodes. 2 D1 I/O 1 I/O 2 1 3 D2 1 6 2 5 3 4 D3 4 D4 D5 D7 6 D6 D8 5 NUP4304MR6 Equivalent Circuit I/O 3 I/O 4 In applications lacking a positive supply reference an external TVS diode may be used as a reference. For these applications, the TVS is connected between pin 2 and the ground plane. The steering diodes will conduct whenever the voltage on the protected line exceeds their forward voltage plus the working voltage of the TVS diode (Vc=Vf + VTVS). In this case, the effective capacitance of the steering diodes will be higher than if a bias was applied. http://onsemi.com 5 NUP4304MR6, SZNUP4304MR6 PACKAGE DIMENSIONS TSOP-6 CASE 318F-05 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F-01, -02, -03 OBSOLETE. NEW STANDARD 318F-04. D 6 HE 1 5 4 2 3 E DIM A A1 b c D E e L HE q b e C A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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