BD675 SERIES
NPN SILICON
POWER DARLINGTON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD675 Series
types are NPN Silicon Darlington Power Transistors,
available in the plastic TO-126 package, and are
designed for audio and video output applications.
MARKING: FULL PART NUMBER
BD675 BD677 BD679
MAXIMUM RATINGS: (TC=25°C) SYMBOL BD675A BD677A BD679A BD681 BD683 UNITS
Collector-Base Voltage VCBO 45 60 80 100 120 V
Collector-Emitter Voltage VCEO 45 60 80 100 120 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 4.0 A
Continuous Base Current IB 100 mA
Power Dissipation PD 40 W
Operating and Storage
Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJC 3.13 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=Rated VCBO 200 µA
ICBO V
CB=Rated VCBO, TC=100°C 2.0 mA
ICEO V
CE=½Rated VCEO 500 µA
IEBO V
EB=5.0V 2.0 mA
BVCEO I
C=50mA (BD675, BD675A) 45 V
BVCEO I
C=50mA (BD677, BD677A) 60 V
BVCEO I
C=50mA (BD679, BD679A) 80 V
BVCEO I
C=50mA (BD681) 100 V
BVCEO I
C=50mA (BD683) 120 V
VCE(SAT) I
C=1.5A, IB=30mA (Non-A) 2.5 V
VCE(SAT) I
C=2.0A, IB=40mA (A) 2.8 V
VBE(ON) V
CE=3.0V, IC=1.5A (Non-A) 2.5 V
VBE(ON) V
CE=3.0V, IC=2.0A (A) 2.5 V
hFE V
CE=3.0V, IC=1.5A (Non-A) 750
hFE V
CE=3.0V, IC=2.0A (A) 750
hfe VCE=3.0V, IC=1.5A, f=1.0MHz 1.0
SOT-126 CASE
R1 (14-June 2010)
www.centralsemi.com
BD675 SERIES
NPN SILICON
POWER DARLINGTON TRANSISTOR
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
TO-126 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (14-June 2010)
