SEMIPONTTM 5
Half Controlled 3-phase
Bridge Rectifier
SKDH 115
Target Data
Features
!
" !#$ % & '( )(*
Typical Applications
+ , - .
,
SKDH
/01 /1$ /,1 2,3 445 6
/ / 3 75 8
4*55 4*55 09, 44):4*
4'55 4'55 09, 44):4'
Symbol Conditions Values Units
2,3 75 8 445 6
201$ 2+01 -; 3 *) 8< 45 45)5 6
-; 3 4*) 8< 45 =)5 6
> -; 3 *) 8< 7$( %%% 45 ))55 6>
-; 3 4*) 8< 7$( %%% 45 ?)55 6>
/$ /+-; 3 *) 8< 2$ 2+34*56 .% 4$7 /
/@ :
/+@
-; 3 4*) 8< .% 4$4 /
-; 3 4*) 8 .% ' A
2,,< 2, -; 3 4*) 8< /,, 3 /,1< /, 3 /1 .% *5 6
-; 3 8< 2B3 6< B: 3 6:C C
/,3D/,1 C
-: -; 3 4*) 8 .% )55 /:C
: -; 3 4*) 8< 3 )5%%%'5 # .% )5 6:C
E-; 3 4*) 8< % 4)5 C
2-; 3 *) 8< % : .% ! : *55 6
2-; 3 *) 8< B3 (( A ! : ?55 6
/B -; 3 *) 8< %% % ( /
2B -; 3 *) 8< %% % 4)5 6
/B, -; 3 4*) 8< %% .% 5$*) /
2B, -; 3 4*) 8< %% .% ) 6
9:F
9:F
;! : 5$7? 9:F
-; ! ?5 %%% G 4*) 8
! ?5 %%% G 4*) 8
*'5 8
/ % % )5 #< %%%< 4 : 4 % ('55 (555 /
1 H *$) I
1I
.% J)
0&12K@I ) B '4
SKDH 115
1 28-02-2006 DIL © by SEMIKRON
Fig. 1 Power diassipation vs. output current Fig. 2 Transient thermal impedance vs. time
Fig. 3 Single diode on-state characteristic Fig. 4 Single thyristor on-state characteristic
Fig. 5 Gate trigger characteristic
SKDH 115
2 28-02-2006 DIL © by SEMIKRON
Dimensions in mm
B '4
B '4 ,
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKDH 115
3 28-02-2006 DIL © by SEMIKRON
