IRLR/U3636PbF
2www.irf.com
S
D
G
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 50A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.136 mH
RG = 25Ω, IAS = 50A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 50A, di/dt ≤ 1109 A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
V(BR)DSS Drain-to-Source Breakdown Volta
e 60 ––– ––– V
∆V(BR)DSS
∆TJ Breakdown Volta
e Temp. Coefficient ––– 0.07 ––– V/°C
––– 5.4 6.8
––– 6.6 8.3
VGS(th) Gate Threshold Volta
e 1.0 ––– 2.5 V
IDSS Drain-to-Source Leaka
e Current ––– ––– 20
––– ––– 250
IGSS Gate-to-Source Forward Leaka
e ––– ––– 100
Gate-to-Source Reverse Leaka
e ––– ––– -100
RG(int) Internal Gate Resistance ––– 0.6 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
fs Forward Transconductance 31 ––– ––– S
QgTotal Gate Char
e ––– 33 49
Qgs Gate-to-Source Char
e ––– 11 –––
Qgd Gate-to-Drain ("Miller") Char
e ––– 15 –––
Qsync Total Gate Char
e Sync. (Qg - Qgd)––– 18 –––
td(on) Turn-On Delay Time ––– 45 –––
trRise Time ––– 216 –––
td(off) Turn-Off Delay Time ––– 43 –––
tfFall Time ––– 69 –––
Ciss Input Capacitance ––– 3779 –––
Coss Output Capacitance ––– 332 –––
Crss Reverse Transfer Capacitance ––– 163 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
i
––– 437 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)
h
––– 636 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Unit
ISContinuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
d
VSD Diode Forward Volta
e ––– ––– 1.3 V
trr Reverse Recovery Time ––– 27 ––– TJ = 25°C VR = 51V,
––– 32 ––– TJ = 125°C IF = 50A
Qrr Reverse Recovery Char
e ––– 31 ––– TJ = 25°C di
dt = 100A
µs
––– 43 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 2.1 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is ne
li
ible (turn-on is dominated by LS+LD)
VGS = -16V
showing the
VDS = 30V
Conditions
VGS = 4.5V
g
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
i
,See Fig.11
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
d
VGS = 10V, ID = 50A
g
VDS = VGS, ID = 100µA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
ns
VGS = 0V, VDS = 0V to 48V
h
MOSFET symbol
TJ = 25°C, IS = 50A, VGS = 0V
g
integral reverse
p-n junction diode.
VGS = 16V
nC
µA
nA
nC
ns
RDS(on) Static Drain-to-Source On-Resistance
pF
A
99
c
396
––– –––
––– –––
VGS = 4.5V, ID = 50A
g
mΩ
ID = 50A
RG = 7.5 Ω
VGS = 4.5V
g
VDD = 39V
ID = 50A, VDS =0V, VGS = 4.5V
Conditions
VDS = 25V, ID = 50A
ID = 50A