SPW35N60C3
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=100 °C
Pulsed drain current1) ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=17.3 A, VDD=50 V 1500 mJ
Avalanche energy, repetitive tAR
1),2) EAR ID=34.6 A, VDD=50 V
Avalanche current, repetitive tAR
1) IAR A
Drain source voltage slope dv/dtID=34.6 A,
VDS=480 V, Tj=125 °C V/ns
Gate source voltage VGS static V
VGS AC (f>1 Hz)
Power dissipation Ptot TC=25 °C W
Operating and storage temperature Tj,Tstg °C
±20
±30
313
-55 ... 150
1.5
34.6
50
Value
34.6
21.9
103.8
VDS @Tj,max 650 V
RDS(on),max 0.1 Ω
ID 34.6 A
Product Summary
Type Package Ordering Code Marking
SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3
PG-TO247
Rev. 2.5 Page 1 2008-02-11
Reverse diode dv/dt dv/dt 15 V/ns
6)
Please note the new package dimensions arccording to PCN 2009-134-A
SPW35N60C3
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 0.4 K/W
RthJA leaded - - 62
Soldering temperature, wavesoldering Tsold
1.6 mm (0.063 in.)
from case for 10 s - - 260 °C
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 600 - - V
Avalanche breakdown voltage V(BR)DS VGS=0 V, ID=34.6 A - 700 -
Gate threshold voltage VGS(th) VDS=VGS,ID=1.9 mA 2.1 3 3.9
Zero gate voltage drain current IDSS
VDS=600 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=600 V, VGS=0 V,
Tj=150 °C - - 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on)
VGS=10 V, ID=21.9 A,
Tj=25 °C - 0.081 0.1 Ω
VGS=10 V, ID=21.9 A,
Tj=150 °C - 0.2 -
Gate resistance RGf=1 MHz, open drain - 0.6 -
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=21.9 A -36-S
Values
Thermal resistance, junction -
ambient
Rev. 2.5 Page 2 2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW35N60C3
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
Input capacitance Ciss - 4500 - pF
Output capacitance Coss - 1500 -
Reverse transfer capacitance Crss - 100 -
Effective output capacitance, energy
related3) Co(er) - 180 -
Effective output capacitance, time
related4) Co(tr) - 324 -
Turn-on delay time td(on) -10-ns
Rise time tr-5-
Turn-off delay time td(off) -70-
Fall time tf-10-
Gate Charge Characteristics
Gate to source charge Qgs -18-nC
Gate to drain charge Qgd -70-
Gate charge total Qg- 150 200
Gate plateau voltage Vplateau - 5.3 - V
4) Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=480 V,
VGS=10 V, ID=34.6 A,
RG=3.3 Ω
VDD=480 V,
ID=34.6 A,
VGS=0 to 10 V
VGS=0 V, VDS=0 V
to 480 V
1) Pulse width limited by maximum temperature Tj,max only
2) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3) Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.5 Page 3 2008-02-11
6) ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Please note the new package dimensions arccording to PCN 2009-134-A
SPW35N60C3
Parameter Symbol Conditions Unit
min. typ. max.
Reverse Diode
Diode continuous forward current IS- - 34.6 A
Diode pulse current IS,pulse - - 103.8
Diode forward voltage VSD
VGS=0 V, IF=34.6 A,
Tj=25 °C - 0.95 1.2 V
Reverse recovery time trr - 600 - ns
Reverse recovery charge Qrr -21-µC
Peak reverse recovery current Irrm -90-A
T
y
pical Transient Thermal Characteristics
VR=480 V, IF=IS,
diF/dt=100 A/µs
TC=25 °C
Values
5) Cth6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
RthCA=0 K/W.
Symbol Value Unit Symbol Value Unit
typ. typ.
Rth1 0.00441 K/W Cth1 0.00037 Ws/K
Rth2 0.00608 Cth2 0.00223
Rth3 0.0341 Cth3 0.00315
Rth4 0.0602 Cth4 0.0179
Rth5 0.0884 Cth5 0.098
Cth6 4.45)
Rev. 2.5 Page 4 2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW35N60C3
1 Power dissipation 2 Safe operating area
Ptot=f(TC)ID=f(VDS); TC=25 °C; D=0
parameter: tp
3 Max. transient thermal impedance 4 Typ. output characteristics
ID=f(VDS); Tj=25 °C ID=f(VDS); Tj=25 °C
parameter: D=t p/Tparameter: VGS
0
100
200
300
400
0 40 80 120 160
TC [°C]
Ptot [W]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
103
102
101
100
103
102
101
100
10-1
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
100
10-1
10-2
10-3
tp [s]
ZthJC [K/W]
4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
20 V
0
20
40
60
80
100
0 5 10 15 20
VDS [V]
ID [A]
Rev. 2.5 Page 5 2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW35N60C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=150 °C RDS(on)=f(ID); Tj=150 °C
parameter: VGS parameter: VGS
7 Drain-source on-state resistance 8 Typ. transfer characteristics
RDS(on)=f(Tj); ID=21.9 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max
parameter: Tj
4 V 4.5 V 5 V 5.5 V
6 V
20 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 102030405060
ID [A]
RDS(on) [Ω]
typ
98 %
0
0.05
0.1
0.15
0.2
0.25
0.3
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [Ω]
25 °C
150 °C
0
20
40
60
80
100
0246810
VGS [V]
ID [A]
4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
20 V
0
10
20
30
40
50
60
0 5 10 15 20
VDS [V]
ID [A]
Rev. 2.5 Page 6 2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW35N60C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
VGS=f(Qgate); ID=34.6 A pulsed IF=f(VSD)
parameter: VDD parameter: Tj
11 Avalanche SOA 12 Avalanche energy
IAR=f(tAR)EAS=f(Tj); ID=17.3 A; VDD=50 V
parameter: Tj(start)
0
400
800
1200
1600
20 60 100 140 180
Tj [°C]
EAS [mJ]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
103
102
101
100
10-1
0 0.5 1 1.5 2 2.5
VSD [V]
IF [A]
125 °C 25 °C
103
102
101
100
10-1
10-2
10-3
0
10
20
30
40
tAR [µs]
IAV [A]
120 V 480 V
0
2
4
6
8
10
12
0 50 100 150 200
Qgate [nC]
VGS [V]
Rev. 2.5 Page 7 2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW35N60C3
13 Drain-source breakdown voltage 14 Typ. capacitances
VBR(DSS)=f(Tj); ID=0.25 mA C=f(VDS); VGS=0 V; f=1 MHz
15 Typ. Coss stored energy
Eoss=f(V DS)
540
580
620
660
700
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
Ciss
Coss
Crss
105
104
103
102
101
0 100 200 300 400 500
VDS [V]
C [pF]
0
5
10
15
20
25
30
0 100 200 300 400 500 600
VDS [V]
Eoss [µJ]
Rev. 2.5 Page 8 2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW35N60C3
Definition of diode switching characteristics
Rev. 2.5 Page 9 2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW35N60C3
PG-TO-247-3-1
Rev. 2.5 Page 10 2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.5 Page 11 2008-02-11
SPW35N60C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any
typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property
rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For
information on the types in question, please contact the nearest Infineon Technologies
Office. Infineon Technologies components may be used in life-support devices or
systems only with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Please note the new package dimensions arccording to PCN 2009-134-A
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
Final Data Sheet Erratum Rev. 2.0, 2010-02-01
1New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1 Outlines TO-247, dimensions in mm/inches
