CM400DU-24NFH - Mitsubishi Electric Semiconductor

Feb.2004

CM400DU-24NFH

APPLICATION

High frequency switching use (30kHz to 60kHz).

Gradient amplifier, Induction heating, power supply, etc.

MITSUBISHI IGBT MODULES

CM400DU-24NFH

HIGH POWER SWITCHING USE

¡IC...................................................................400A

¡VCES ......................................................... 1200V

¡Insulated T ype

¡2-elements in a pack

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

G1 E1 E2 G2

C1

E2

C2E1

3-M6 NUTS

TC measured point

4-φ6.5 MOUTING HOLES

LABEL

G1 G2

E2

E1

CM

C1

E2

C2E1

(8.25)

18.25

(18.5)

62

±0.25

80

110

93

±0.25

2.5

21.5

6156

1414

29

+1.0

–0.5

18718718

14

21 8.5

7.5

2.8

40.5

0.5

4

25 25

CIRCUIT DIAGRAM

Feb.2004

Gate-emitter threshold voltage

Thermal resistance*1

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Weight

VCE = VCES, VGE = 0V

VGE = VGES, VCE = 0V

Tj = 25°C

Tj = 125°C

VCC = 600V, IC = 400A, VGE = 15V

VCC = 600V, IC = 400A

VGE1 = VGE2 = 15V

RG = 0.78Ω, Inductive load switching operation

IE = 400A

IE = 400A, VGE = 0V

IGBT part (1/2 module)

FWDi part (1/2 module)

Case to fin, Thermal compound Applied*2 (1/2 module)

IGBT part (1/2 module)

FWDi part (1/2 module)

IC = 40mA, VCE = 10V

IC = 400A, VGE = 15V

VCE = 10V

VGE = 0V

1200

±20

400

800

400

800

1040

2500

–40 ~ +150

–40 ~ +125

2500

3.5 ~ 4.5

580

MITSUBISHI IGBT MODULES

CM400DU-24NFH

HIGH POWER SWITCHING USE

V

A

W

°C

V

N • m

g

1

1.4

6.5

—

63

5.3

1.2

—

300

100

500

150

250

—

3.5

0.12

0.23

—

0.051*3

0.093*3

7.8

mA

µA

nF

nC

ns

µC

V

°C/W

Ω

—

5.0

—

1800

—

16

—

0.02

—

0.78

6V

V

4.5 7.5

ns

Collector cutoff current

Gate leakage current

Collector-emitter

saturation voltage (Note 4)

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Reverse recovery time

Reverse recovery charge

Emitter-collector voltage

Contact thermal resistance

Thermal resistance*4

External gate resistance

ICES

IGES

Cies

Coes

Cres

QG

td(on)

tr

td(off)

tf

trr (

Note 1

)

Qrr (

Note 1

)

VEC(

Note 1

)

Rth(j-c)Q

Rth(j-c)R

Rth(c-f)

Rth(j-c’)Q

Rth(j-c’)R

RG

Symbol Parameter

VGE(th)

VCE(sat)

*1 : TC measured point is shown in page OUTLINE DRAWING.

*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*3 : If you use this value, Rth(f-a) should be measured just under the chips.

*4 : TC’ measured point is just under the chips.

Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

4. No short circuit capability is designed.

G-E Short

C-E Short

Operation (Note 2)

Pulse (Note 2)

Operation (Note 2)

Pulse (Note 2)

TC = 25°C

TC’ = 25°C*4

Main Terminal to base plate, AC 1 min.

Main Terminal M6

Mounting holes M6

Typical value

Symbol Parameter

Collector current

Emitter current

Mounting torque

Conditions UnitRatings

VCES

VGES

IC

ICM

IE (

Note 1

)

IEM (

Note 1

)

PC (

Note 3

)

PC’ (

Note 3

)

Tj

Tstg

Viso—

—

Unit

Typ.

Limits

Min. Max.

Test conditions

MAXIMUM RATINGS (Tj = 25°C)

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Feb.2004

MITSUBISHI IGBT MODULES

CM400DU-24NFH

HIGH POWER SWITCHING USE

14

10

–1

10

0

10

1

10

2

10

3

2

3

5

7

2

3

5

7

2

3

5

7

10

–1

210

0

357 2 10

1

357 2 10

2

357

2

3

5

7

V

GE = 0V

Cies

Coes

Cres

0 5 10 15 20

VCE = 10V

0

1

6

7

8

9

2

3

4

5

0 100 200 300 400 700 800500 600

Tj = 25°C

Tj = 125°C

VGE = 15V

0

100

200

300

400

500

600

700

800

0246810 0

100

200

300

400

500

600

700

800

VGE=20

(V)

Tj = 25°C

12

9

8

11

10

13

0

2

4

6

8

10

61014188121620

Tj = 25°C

IC = 800A

IC = 400A

IC = 160A

10

1

10

2

3

5

7

012 435

10

3

2

3

5

7

T

j = 25°C

Tj = 125°C

15

Tj = 25°C

Tj = 125°C

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

EMITTER CURRENT IE (A)

EMITTER-COLLECTOR VOLTAGE VEC (V)

CAPACITANCE CHARACTERISTICS

(TYPICAL)

CAPACITANCE Cies, Coes, Cres (nF)

COLLECTOR-EMITTER VOLTAGE VCE (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT IC (A)

TRANSFER CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT IC (A)

GATE-EMITTER VOLTAGE VGE (V)

COLLECTOR-EMITTER

SATURATION VOLTAGE VCE(sat) (V)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR-EMITTER

SATURATION VOLTAGE VCE(sat) (V)

GATE-EMITTER VOLTAGE VGE (V)

PERFORMANCE CURVES

Feb.2004

MITSUBISHI IGBT MODULES

CM400DU-24NFH

HIGH POWER SWITCHING USE

10

1

10

2

23 57 10

3

23 57

10

1

10

2

3

5

7

10

3

2

3

5

7Tj = 25°C

trr

Irr

10

1

10

2

23 57 10

3

23 57

2

3

5

7

2

3

5

7

10

0

10

2

10

1

10

3

2

3

5

7td(off)

td(on)

tf

tr

0

5

10

15

20

0 500 1000 1500 2000 2500

VCC = 600V

VCC = 400V

IC = 400A

Conditions:

VCC = 600V

VGE = ±15V

RG = 0.78Ω

Tj = 125°C

Inductive load

Conditions:

VCC = 600V

VGE = ±15V

RG = 0.78Ω

Tj = 25°C

Inductive load

10

–3

10

–5

10

–4

10

0

7

5

3

2

10

–2

7

5

3

2

10

–1

7

5

3

2

10

–3

23 57 23 57 23 57 23 57

10

1

10

–2

10

–1

10

0

10

–3

10

–3

7

5

3

2

10

–2

7

5

3

2

10

–1

23 57 23 57

Single Pulse

TC = 25°C

Per unit base =

Rth(j–c) = 0.12°C/W

10

–3

10

–5

10

–4

10

0

7

5

3

2

10

–2

7

5

3

2

10

–1

7

5

3

2

10

–3

23 57 23 57 23 57 23 57

10

1

10

–2

10

–1

10

0

10

–3

10

–3

7

5

3

2

10

–2

7

5

3

2

10

–1

23 57 23 57

Single Pulse

TC = 25°C

Per unit base =

Rth(j–c) = 0.23°C/W

10

1

10

2

3

5

7

10

3

2

3

5

7

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part)

TIME (s)

NORMALIZED TRANSIENT

THERMAL IMPEDANCE Z

th(j – c)

HALF-BRIDGE

SWITCHING TIME CHARACTERISTICS

(TYPICAL)

SWITCHING TIME (ns)

COLLECTOR CURRENT I

C

(A)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(TYPICAL)

REVERSE RECOVERY TIME t

rr

(ns)

EMITTER CURRENT I

E

(A)

REVERSE RECOVERY CURRENT I

rr

(A)

GATE CHARGE CHARACTERISTICS

(TYPICAL)

GATE-EMITTER VOLTAGE V

GE

(V)

GATE CHARGE Q

G

(nC)

TIME (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(FWDi part)

NORMALIZED TRANSIENT

THERMAL IMPEDANCE Z

th(j – c)