Semiconductor Group 1 04.96
NPN Silicon AF Transistors BCX 54 … BCX 56
Features
●For AF driver and output stages
●High collector current
●Low collector-emitter saturation voltage
●Complementary types: BCX 51 … BCX 53 (PNP)
Type Ordering Code
(tape and reel)
Marking Package1)
Pin Configuration
BCX 54
BCX 54-10
BCX 54-16
BCX 55
BCX 55-10
BCX 55-16
BCX 56
BCX 56-10
BCX 56-16
Q62702-C954
Q62702-C1861
Q62702-C1731
Q62702-C1729
Q62702-C1730
Q62702-C1903
Q62702-C1614
Q62702-C1635
Q62702-C1613
BA
BC
BD
BE
BG
BM
BH
BK
BL
SOT-89
123
BCE
1) For detailed information see chapter Package Outlines.
BCX 54 … BCX 56
Semiconductor Group 2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Peak collector current ICM
Collector current ICA
Junction temperature Tj˚C
Total power dissipation, TS = 130 ˚C Ptot W
Storage temperature range Tstg
Collector-base voltage VCB0
Thermal Resistance
Junction - ambient1) Rth JA ≤ 75 K/W
1
1.5
1
150
– 65 … + 150
Emitter-base voltage VEB0
Base current IBmA100
45 60
45 60
BCX 54 BCX 55
Peak base current IBM 200
55
80
100
BCX 56
5
Junction - soldering point Rth JS ≤ 20
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
BCX 54 … BCX 56
Semiconductor Group 3
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
–
DC current gain1)
I
C = 5 mA, VCE = 2 V
I
C = 150 mA, VCE = 2 V
BCX 54, BCX 55, BCX 56
BCX 54-10, BCX 55-10, BCX 56-10
BCX 54-16, BCX 55-16, BCX 56-16
I
C = 500 mA, VCE = 2 V
hFE 25
40
63
100
25
–
–
100
160
–
–
250
160
250
–
VCollector-emitter breakdown voltage
I
C = 10 mA BCX 54
BCX 55
BCX 56
V(BR)CE0
45
60
80
–
–
–
–
–
–
nA
µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0 –
––
–100
20
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 100 µABCX 54
BCX 55
BCX 56
V(BR)CB0
45
60
100
–
–
–
–
–
–
Emitter-base breakdown voltage
I
E = 10 µAV(BR)EB0 5––
V
Collector-emitter saturation voltage1)
I
C = 500 mA, IB = 50 mA VCEsat – – 0.5
Base-emitter voltage1)
I
C = 500 mA, VCE = 2 V VBE ––1
nAEmitter cutoff current
VEB = 4 V IEB0 ––20
MHzTransition frequency
I
C = 50 mA, VCE = 10 V, f = 20 MHz fT– 100 –
AC characteristics
1) Pulse test: t≤300
µ
s
,
D = 2 %.
BCX 54 … BCX 56
Semiconductor Group 4
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT=f(IC)
VCE = 10 V
Collector cutoff current ICB0 = f (TA)
VCB = 30 V
BCX 54 … BCX 56
Semiconductor Group 5
Collector current IC = f (VBE)
VCE = 2 V
Base-emitter saturation voltage
IC=f(VBEsat)
hFE = 10
Collector-emitter saturation voltage
IC=f(VCEsat)
hFE = 10
DC current gain hFE =f(IC)
VCE = 2 V
