A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High power added efficiency : add = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm) High ESD tolerance Suitable for VHF to UHF-BAND Class-AB power amplifier. ED * * * * * APPLICATIONS 150 MHz Band Radio System 460 MHz Band Radio System 900 MHz Band Radio System IN U * * * ORDERING INFORMATION Part Number NE5550279A Order Number NE5550279A-A NE5550279A-T1 NE5550279A-T1-A Package 79A (Pb Free) Marking W7 Supplying Form * 12 mm wide embossed taping * Gate pin faces the perforation side of the tape 12 mm wide embossed taping Gate pin faces the perforation side of the tape Qty 1 kpcs/reel NE5550279A-T1A NE5550279A-T1A-A 12 mm wide embossed taping Gate pin faces the perforation side of the tape Qty 5 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5550279A-A SC O NT * * * * * * ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current DI Drain Current (50% Duty Pulsed) Total Power Dissipation Note Channel Temperature Storage Temperature Note: Value at TC = 25C Symbol VDS VGS IDS IDS-pulse Ratings 30 6.0 0.6 1.2 Unit V V A A Ptot Tch Tstg 6.25 150 -55 to +150 W C C CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Page 1 of 7 A Business Partner of Renesas Electronics Corporation. NE5550279A RECOMMENDED OPERATING RANGE (TA = 25C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions MIN. - 1.65 - - f = 460 MHz, VDS = 7.5 V TYP. 7.5 2.20 0.4 15 MAX. 9.0 2.85 - 20 Unit V V A dBm Vth BVDSS Gm Rth Pout IDS d add GL Note MIN. TYP. MAX. Unit - - - - 100 10 nA A VDS = 7.5 V, IDS = 1.0 mA IDS = 10 A VDS = 7.5 V, IDS = 14020 mA Channel to Case 1.15 25 0.36 - 1.65 38 0.44 20.0 2.25 - 0.58 - V V S C/W f = 460 MHz, VDS = 7.5 V, Pin = 15 dBm, IDset = 40 mA (RF OFF) 31.5 - - - - 33.0 0.38 70 68 22.5 - - - - - dBm A % % dB VGS = 6.0 V VDS = 25 V IN U IGSS IDSS Test Conditions NT Note: Pin = 0 dBm Symbol SC O Remark DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. DI <R> Parameter DC Characteristics Gate to Source Leakage Current Drain to Source Leakage Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Drain to Source Breakdown Voltage Transconductance Thermal Resistance RF Characteristics Output Power Drain Current Power Drain Efficiency Power Added Efficiency Linear Gain ED ELECTRICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Page 2 of 7 A Business Partner of Renesas Electronics Corporation. NE5550279A TEST CIRCUIT SCHEMATIC FOR 460 MHz VGS VDS R1 C1 L1 C1 50 OUT C10 L2 C11 C12 L3 L4 FET NE5550279A C14 C13 ED IN C22 C20 50 C21 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Value 1 F 22 pF 1.2 pF Type GRM188B31C105KA92 GRM1882C1H220JA01 ATC100A1R2JW Maker Murata Murata C12 4.7 pF ATC100A4R7BW American Technical Ceramics C13 15 pF ATC100A150BW American Technical Ceramics C14 12 pF ATC100A120BW American Technical Ceramics C20 10 pF C21 3.9 pF C22 100 pF R1 2 k IN U Symbol C1 C10 C11 NT American Technical Ceramics ATC100A100JW American Technical Ceramics ATC100A3R9BW American Technical Ceramics ATC100A101JW American Technical Ceramics KOA SC O 1/10 W Chip Resistor RK73B1JTTD202J 0.5 mm, D = 3 mm, 10 Turns LQW18AN10NG00 0.4 mm, D = 1.6 mm, 3 Turns L1 L2 L3 123 nH 10 nH 9.8 nH L4 PCB SMA Connecter 20 nH - - Ohesangyou Murata Ohesangyou 0.5 mm, D = 3 mm, 2 Turns R4775, t = 0.4 mm, r = 4.5, size = 30 x 48 mm WAKA 01K0790-20 Ohesangyou Panasonic WAKA DI COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz C12 C10 C11 R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 C1 C1 L2 C13 R1 C14 L1 C21 C20 L4 C22 L3 Page 3 of 7 A Business Partner of Renesas Electronics Corporation. NE5550279A TYPICAL CHARACTERISTICS 1 (TA = 25C) R: f = 460 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = -10 to 20 dBm IM: f1 = 460 MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pout (2 tone) = 8 to 32 dBm POWER GAIN, POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 30 0.7 15 0.5 10 0.4 5 0.3 0 0.2 -5 0.1 25 -10 -5 0 5 10 15 20 40 15 30 10 20 5 10 0 -15 0 25 -10 SC O -30 -40 3f0 - 3.6 V 3f0 - 4.5 V 3f0 - 6.0 V 3f0 - 7.5 V 3f0 - 9.0 V DI 2nd Harmonics 2f0 (dBc) 3rd Harmonics 3f0 (dBc) -20 -50 -60 -70 5 10 15 20 25 30 35 40 Output Power Pout (dBm) 3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc) 0 2f0 - 3.6 V 2f0 - 4.5 V 2f0 - 6.0 V 2f0 - 7.5 V 2f0 - 9.0 V -5 0 5 10 15 0 25 20 Input Power Pin (dBm) IM3/IM5 vs. 2 TONES OUTPUT POWER 2f0, 3f0 vs. OUTPUT POWER -10 50 20 Input Power Pin (dBm) 0 60 IN U 0.6 70 Power Added Efficiency add (%) 35 0.8 20 -10 -15 ED 25 80 Gp - 3.6 V Gp - 4.5 V Gp - 6.0 V Gp - 7.5 V Gp - 9.0 V D add - 3.6 V D add - 4.5 V D add - 6.0 V D add - 7.5 V D add - 9.0 V NT Output Power Pout (dBm) 30 0.9 Power Gain GP (dB) 35 40 1 Pout - 3.6 V Pout - 4.5 V Pout - 6.0 V Pout - 7.5 V Pout - 9.0 V IDS - 3.6 V IDS - 4.5 V IDS - 6.0 V IDS - 7.5 V IDS - 9.0 V Drain Current IDS (A) 40 IM3 - 3.6 V IM3 - 4.5 V IM3 - 6.0 V IM3 - 7.5 V IM3 - 9.0 V IM5 - 3.6 V IM5 - 4.5 V IM5 - 6.0 V IM5 - 7.5 V IM5 - 9.0 V -10 -20 -30 -40 -50 -60 -70 5 10 15 20 25 30 35 2 Tones Output Power Pout (2 tone) (dBm) Remark The graphs indicate nominal characteristics. R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Page 4 of 7 A Business Partner of Renesas Electronics Corporation. NE5550279A S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] [RF Devices] [Device Parameters] DI SC O NT IN U ED URL http://www.renesas.com/products/microwave/ R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Page 5 of 7 A Business Partner of Renesas Electronics Corporation. NE5550279A PACKAGE DIMENSIONS 79A (UNIT: mm) 1.2 MAX. Drain IN U 1.0 MAX. Gate 0.8 MAX. 3.60.2 NT 0.90.2 0.20.1 5.7 MAX. 0.80.15 W 0.40.15 Drain ED Source 4.4 MAX. Source 27001 1.50.2 7 Gate 0.60.15 5.7 MAX. (Bottom View) 4.2 MAX. 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) 4.0 0.5 1.0 DI 5.9 Gate Source Stop up the hole with a rosin or something to avoid solder flow. Drain 1.2 SC O 1.7 Through Hole: 0.2 x 33 0.5 0.5 6.1 R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Page 6 of 7 A Business Partner of Renesas Electronics Corporation. NE5550279A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2% (Wt.) or below Condition Symbol IR260 ED Soldering Method Infrared Reflow Peak temperature (molten solder temperature) : 260C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below Partial Heating Peak temperature (terminal temperature) : 350C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below IN U Wave Soldering WS260 HS350 CAUTION DI SC O NT Do not use different soldering methods together (except for partial heating). R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Page 7 of 7 Revision History Rev. Date NE5550279A Data Sheet Description Summary Page Mar 28, 2012 - 2.00 Jul 04, 2012 p.2 First edition issued Modification of ELECTRICAL CHARACTERISTICS DI SC O NT IN U ED 1.00 All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE 5. 6. 7. 8. 9. 10. 11. 12. D UE 4. IN 3. NT 2. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 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