SMBJ SERIES
Taiwan Semiconductor
1 Version: Q2004
600W, 5V - 170V Surface Mount Transient Voltage Suppressor
FEATURES
● Ideal for automated placement
● Glass passivated junction
● Excellent clamping capability
● Fast response time: Typically less than 1.0ps
● Typical IR less than 1μA above 10V
● Moisture sensitivity level: level 1, per J-STD-020
● AEC-Q101 qualified available:
ordering code with suffix “H”
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
MECHANICAL DATA
● Case: DO-214AA (SMB)
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.090 g (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VWM 5 - 170 V
VBR (uni - directional)
6.4 – 231 V
VBR (bi - directional) 6.4 – 231 V
PPK 600 W
TJ MAX 150 °C
Package DO-214AA (SMB)
Configuration Single Die
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Non-repetitive peak impulse power dissipation with
10/1000µs waveform (1) PPK 600 W
Steady state power dissipation at TA=25°C PD 3 W
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load for Uni-directional only IFSM 100 A
Forward Voltage @ IF=50A for Uni-directional only (2) VF 3.5 / 5.0 V
Junction temperature TJ - 55 to +150 °C
Storage temperature TSTG - 55 to +150 °C
Notes:
1. Non-repetitive current pulse per Fig. 3 and derated above TA=25°C per Fig. 2
2. VF=3.5V on SMBJ5.0 - SMBJ90 devices and VF=5.0V on SMBJ100 - SMBJ170 devices
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170
2. Electrical characteristics apply in both directions
SMBJ SERIES
Taiwan Semiconductor
2 Version: Q2004
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-Case Thermal Resistance RӨJC 10 °C/W
Junction-to-Ambient Thermal Resistance RӨJA 55 °C/W
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
Part number
Marking code
Breakdown voltage
VBR@IT
(V)
(Note 1)
Test
current
IT
(mA)
Working
stand-off
voltage
VWM
(V)
Maximum
blocking
leakage
current
ID@VWM
(µA)
Maximum
peak
impulse
current
IPP
(A)
(Note 2)
Maximum
clamping
voltage
VC@IPP
(V)
Min Max
SMBJ5.0 KD 6.40 7.30 10 5.0 800 65.0 9.6
SMBJ5.0A KE 6.40 7.00 10 5.0 800 68.0 9.2
SMBJ6.0 KF 6.67 8.15 10 6.0 800 55.0 11.4
SMBJ6.0A KG 6.67 7.37 10 6.0 800 61.0 10.3
SMBJ6.5 KH 7.22 8.82 10 6.5 500 51.0 12.3
SMBJ6.5A KK 7.22 7.98 10 6.5 500 56.0 11.2
SMBJ7.0 KL 7.78 9.51 10 7.0 200 47.0 13.3
SMBJ7.0A KM 7.78 8.60 10 7.0 200 52.0 12.0
SMBJ7.5 KN 8.33 10.3 1 7.5 100 44.0 14.3
SMBJ7.5A KP 8.33 9.21 1 7.5 100 48.0 12.9
SMBJ8.0 KQ 8.89 10.9 1 8.0 50 42.0 15.0
SMBJ8.0A KR 8.89 9.83 1 8.0 50 46.0 13.6
SMBJ8.5 KS 9.44 11.5 1 8.5 10 39.0 15.9
SMBJ8.5A KT 9.44 10.4 1 8.5 10 43.0 14.4
SMBJ9.0 KU 10.0 12.2 1 9.0 5 37.0 16.9
SMBJ9.0A KV 10.0 11.1 1 9.0 5 40.0 15.4
SMBJ10 KW 11.1 13.6 1 10 5 33.0 18.8
SMBJ10A KX 11.1 12.3 1 10 5 37.0 17.0
SMBJ11 KY 12.2 14.9 1 11 1 31.0 20.1
SMBJ11A KZ 12.2 13.5 1 11 1 34.0 18.2
SMBJ12 LD 13.3 16.3 1 12 1 28.0 22.0
SMBJ12A LE 13.3 14.7 1 12 1 31.0 19.9
SMBJ13 LF 14.4 17.6 1 13 1 26.0 23.8
SMBJ13A LG 14.4 15.9 1 13 1 29.0 21.5
SMBJ14 LH 15.6 19.1 1 14 1 24.4 25.8
SMBJ14A LK 15.6 17.2 1 14 1 27.0 23.2
SMBJ15 LL 16.7 20.4 1 15 1 23.1 26.9
SMBJ15A LM 16.7 18.5 1 15 1 25.1 24.4
SMBJ16 LN 17.8 21.8 1 16 1 21.8 28.8
SMBJ16A LP 17.8 19.7 1 16 1 24.2 26.0
SMBJ17 LQ 18.9 23.1 1 17 1 20.0 30.5
SMBJ17A LR 18.9 20.9 1 17 1 22.8 27.6
SMBJ18 LS 20.0 24.4 1 18 1 19.5 32.2
SMBJ18A LT 20.0 22.1 1 18 1 21.5 29.2
SMBJ20 LU 22.2 27.1 1 20 1 17.6 35.8
SMBJ20A LV 22.2 24.5 1 20 1 19.4 32.4
SMBJ22 LW 24.4 29.8 1 22 1 15.0 39.4
SMBJ22A LX 24.4 26.9 1 22 1 17.7 35.5
SMBJ24 LY 26.7 32.6 1 24 1 14.6 43.0
SMBJ24A LZ 26.7 29.5 1 24 1 16.0 38.9
SMBJ26 MD 28.9 35.3 1 26 1 13.5 46.6
SMBJ26A ME 28.9 31.9 1 26 1 14.9 42.1
SMBJ SERIES
Taiwan Semiconductor
3 Version: Q2004
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
Part number
Marking code
Breakdown voltage
VBR@IT
(V)
(Note 1)
Test
current
IT
(mA)
Working
stand-off
voltage
VWM
(V)
Maximum
blocking
leakage
current
ID@VWM
(µA)
Maximum
peak
impulse
current
IPP
(A)
(Note 2)
Maximum
clamping
voltage
VC@IPP
(V)
Min Max
SMBJ28 MF 31.1 38.0 1 28 1 12.6 50.0
SMBJ28A MG 31.1 34.4 1 28 1 13.8 45.4
SMBJ30 MH 33.3 40.7 1 30 1 11.7 53.5
SMBJ30A MK 33.3 36.8 1 30 1 13.0 48.4
SMBJ33 ML 36.7 44.9 1 33 1 10.6 59.0
SMBJ33A MM 36.7 40.6 1 33 1 11.8 53.3
SMBJ36 MN 40.0 48.9 1 36 1 9.8 64.3
SMBJ36A MP 40.0 44.2 1 36 1 10.8 58.1
SMBJ40 MQ 44.4 54.3 1 40 1 8.8 71.4
SMBJ40A MR 44.4 49.1 1 40 1 9.7 64.5
SMBJ43 MS 47.8 58.4 1 43 1 8.2 76.7
SMBJ43A MT 47.8 52.8 1 43 1 9.0 69.4
SMBJ45 MU 50.0 61.1 1 45 1 7.8 80.3
SMBJ45A MV 50.0 55.3 1 45 1 8.6 72.7
SMBJ48 MW 53.3 65.1 1 48 1 7.3 85.5
SMBJ48A MX 53.3 58.9 1 48 1 8.1 77.4
SMBJ51 MY 56.7 69.3 1 51 1 6.9 91.1
SMBJ51A MZ 56.7 62.7 1 51 1 7.6 82.4
SMBJ54 ND 60.0 73.3 1 54 1 6.5 96.3
SMBJ54A NE 60.0 66.3 1 54 1 7.2 87.1
SMBJ58 NF 64.4 78.7 1 58 1 6.1 103
SMBJ58A NG 64.4 71.2 1 58 1 6.7 93.6
SMBJ60 NH 66.7 81.5 1 60 1 5.8 107
SMBJ60A NK 66.7 73.7 1 60 1 6.5 96.8
SMBJ64 NL 71.1 86.9 1 64 1 5.5 114
SMBJ64A NM 71.1 78.6 1 64 1 6.1 103
SMBJ70 NN 77.8 95.1 1 70 1 5.0 125
SMBJ70A NP 77.8 86 1 70 1 5.5 113
SMBJ75 NQ 83.3 102 1 75 1 4.7 134
SMBJ75A NR 83.3 92.1 1 75 1 5.2 121
SMBJ78 NS 86.7 106 1 78 1 4.5 139
SMBJ78A NT 86.7 95.8 1 78 1 5.0 126
SMBJ85 NU 94.4 115 1 85 1 4.1 151
SMBJ85A NV 94.4 104 1 85 1 4.6 137
SMBJ90 NW 100 122 1 90 1 3.9 160
SMBJ90A NX 100 111 1 90 1 4.3 146
SMBJ100 NY 111 136 1 100 1 3.5 179
SMBJ100A NZ 111 123 1 100 1 3.8 162
SMBJ110 PD 122 149 1 110 1 3.2 196
SMBJ110A PE 122 135 1 110 1 3.5 177
SMBJ120 PF 133 163 1 120 1 2.9 214
SMBJ120A PG 133 147 1 120 1 3.2 193
SMBJ130 PH 144 176 1 130 1 2.7 231
SMBJ130A PK 144 159 1 130 1 3.0 209
SMBJ150 PL 167 204 1 150 1 2.3 266
SMBJ150A PM 167 185 1 150 1 2.5 243
SMBJ160 PN 178 218 1 160 1 2.2 287
SMBJ160A PP 178 197 1 160 1 2.4 259
SMBJ170 PQ 189 231 1 170 1 2.0 304
SMBJ SERIES
Taiwan Semiconductor
4 Version: Q2004
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
Part number
Marking code
Breakdown voltage
VBR@IT
(V)
(Note 1)
Test
current
IT
(mA)
Working
stand-off
voltage
VWM
(V)
Maximum
blocking
leakage
current
ID@VWM
(µA)
Maximum
peak
impulse
current
IPP
(A)
(Note 2)
Maximum
clamping
voltage
VC@IPP
(V)
Min Max
SMBJ170A PR 189 209 1 170 1 2.2 275
Notes:
1. VBR measure after IT applied for 30ms, IT=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. All terms and symbols are consistent with ANSI/IEEE C62.35.
4. For bidirectional use C or CA suffix for types SMBJ5.0 - SMBJ170
5. For bipolar types having VWM of 10 V (SMBJ10C) and under, the ID limit is doubled.
ORDERING INFORMATION
ORDERING CODE
(Note 1,2,3) PACKAGE
PACKING
SMBJxxxxHR5G SMB 850 / 7" reel
SMBJxxxxHM4G SMB 3,000 / 13" reel
SMBJxxxxHR5 SMB 850 / 7" reel
SMBJxxxxHM4 SMB 3,000 / 13" reel
SMBJxxxx R5G SMB 850 / 7" reel
SMBJxxxx M4G SMB 3,000 / 13" reel
SMBJxxxx R5 SMB 850 / 7" reel
SMBJxxxx M4 SMB 3,000 / 13" reel
Note 1:
"xxxx" defines voltage from 5.0V (SMBJ5.0) to 170V (SMBJ170A)
Note 2:
"H" means AEC-Q101 qualified
Note 3:
“G” means green compound (halogen free)
SMBJ SERIES
Taiwan Semiconductor
5 Version: Q2004
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Peak Pulse Power Rating Curve
Fig2. Pulse Derating Curve
Fig3. Clamping Power Pulse Waveform
Fig4. Maximum Non-Repetitive Forward Surge
Current
0.1
1
10
100
0.1 1 10 100 1000 10000
PPPM, PEAK PULSE POWER, KW
tp, PULSE WIDTH, (μs)
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
PEAK PULSE POWER(PPP) OR CURRENT (IPP) A
DERATING IN PERCENTAGE (%)
TA, AMBIENT TEMPERATURE (°C)
10
100
1 10 100
IFSM, PEAK FORWARD SURGE A
CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine Wave
UNIDIRECTIONAL ONLY
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3
IPPM, PEAK PULSE CURRENT (%)
t, TIME (ms)
td
Peak value
I
PPM
Rise time tr=10μs to 100%
Half value-IPPM/2
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10/1000μs, waveform
SMBJ SERIES
Taiwan Semiconductor
6 Version: Q2004
10
100
1000
10000
100000
1 10 100
CJ, JUNCTION CAPACITANCE (pF) A
V(BR), BREAKDOWN VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
VR=0
VR-RATED
STAND-OFF
VOLTAGE
Fig5. Typical Junction Capacitance
SMBJ SERIES
Taiwan Semiconductor
7 Version: Q2004
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
DO-214AA (SMB)
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
SMB
(1)
P/N = Marking Code
G = Green Compound
YW = Date Code
F = Factory Code
Note(1): Cathode band for uni-directional products only
SMBJ SERIES
Taiwan Semiconductor
8 Version: Q2004
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
