NE5550234-T1-AZ - Renesas Electronics

R09DS0039EJ0300 Rev.3.00 Page 1 of 14

Mar 12, 2013

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Data Sheet

NE5550234

Silicon Power MOS FET

FEATURES

• High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)

• High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)

• High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)

• High ESD tolerance

• Suitable for VHF to UHF-BAND Class-AB power amplifier.

APPLICATIONS

• 150 MHz Band Radio System

• 460 MHz Band Radio System

• 900 MHz Band Radio System

ORDERING INFORMATION

Part Number Order Number Package Marking Supplying Form

NE5550234 NE5550234-AZ V5

• 12 mm wide embossed taping

• Gate pin faces the perforation side of the tape

NE5550234-T1 NE5550234-T1-AZ

3-pin

power

minimold

(34 PKG)

(Pb-Free)

• 12 mm wide embossed taping

• Gate pin faces the perforation side of the tape

• Qty 1 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE5550234

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit

Drain to Source Voltage VDS 30 V

Gate to Source Voltage VGS 6.0 V

Drain Current IDS 0.6 A

Drain Current

(50% Duty Pulsed)

IDS-pulse 1.2 A

Total Power Dissipation Note P

tot 12.5 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg −65 to +150 °C

Note: Value at TC = 25°C

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0039EJ0300

Rev.3.00

Mar 12, 2013

NE5550234

R09DS0039EJ0300 Rev.3.00 Page 2 of 14

Mar 12, 2013

RECOMMENDED OPERATING RANGE (TA = 25°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Drain to Source Voltage VDS − 7.5 9.0 V

Gate to Source Voltage VGS 1.65 2.20 2.85 V

Drain Current IDS − 0.38 − A

Input Power Pin f = 460 MHz, VDS = 7.5 V − 15 20 dBm

ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics

Gate to Source Leakage Current IGSS V

GS = 6.0 V − − 100 nA

Drain to Source Leakage Current

(Zero Gate Voltage Drain Current)

IDSS V

DS = 25 V − − 10 μA

Gate Threshold Voltage Vth V

DS = 7.5 V, IDS = 1.0 mA 1.15 1.65 2.25 V

Drain to Source Breakdown Voltage BVDSS I

DS = 10

A 25 38 − V

Transconductance Gm V

DS = 7.5 V, IDS = 140±20 mA − 0.44 − S

Thermal Resistance Rth Channel to Case − 10.0 − °C/W

RF Characteristics

Output Power Pout f = 460 MHz, VDS = 7.5 V, 31.5 33.0 − dBm

Drain Current IDS P

in = 15 dBm, − 0.38 − A

Power Drain Efficiency

d I

Dset = 40 mA (RF OFF) − 70 − %

Power Added Efficiency

add − 68 − %

Linear Gain GL Note 1 − 23.5 − dB

Load VSWR Tolerance Note 2 f = 460 MHz, VDS = 9.0 V,

Pin = 15 dBm,

IDset = 40 mA (RF OFF)

Load VSWR=20:1(All Phase)

No Destroy

Output Power Pout − 33.0 − dBm

Drain Current IDS − 0.36 − A

Power Drain Efficiency

d − 74 − %

Power Added Efficiency

add − 73 − %

Linear Gain GL Note 3

f = 157 MHz, VDS = 7.5 V,

Pin = 15 dBm,

IDset = 40 mA (RF OFF)

− 25.8 − dB

Output Power Pout − 32.2 − dBm

Drain Current IDS − 0.35 − A

Power Drain Efficiency

d − 62 − %

Power Added Efficiency

add − 60 − %

Linear Gain GL Note 4

f = 900 MHz, VDS = 7.5 V,

Pin = 17 dBm,

IDset = 40 mA (RF OFF)

− 18.3 − dB

Notes: 1. Pin = 0 dBm

2. These characteristics values are measurement using measurement tools especially by RENESAS.

3. Pin = −5 dBm

4. Pin = 7 dBm

Remark DC performance is 100% testing. RF performance is testing several samples per wafer.

The wafer rejection criterion for standard devices is 1 reject for several samples.

NE5550234

R09DS0039EJ0300 Rev.3.00 Page 3 of 14

Mar 12, 2013

TEST CIRCUIT SCHEMATIC FOR 460 MHz

C20

C10

IN OUT

C22

C11 C12 C21

C1 L1R1

NE5550234

50 Ω50 Ω

L20L10 L11

COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS

Symbol Value Type Maker

C1 1

F GRM31MR71H105KA88L Murata

C10 27 pF GRM1882C1H270JA01 Murata

C11 3.9 pF GRM1882C1H3R9CZ01 Murata

C12 18 pF GRM1882C1H180JA01 Murata

C20 12 pF GRM1882C1H120JA01 Murata

C21 1.5 pF GRM1882C1H1R5CZ01 Murata

C22 100 pF GRM2162C1H101JA01D Murata

R1 4.7 kΩ 1/10 W Chip Resistor SSM

SSM_RG1608PB472

L1 47.2 nH

0.4 mm,

D = 2 mm, 7 Turns Ohesangyou

L10, L11 12 nH LL1608-FS12NJ TOKO

L20 7.8 nH

0.4 mm,

D = 1.4 mm, 3 Turns Ohesangyou

PCB − R1766, t = 0.8 mm,

r = 4.8, size = 30 × 40 mm Panasonic

SMA Connecter − WAKA 01K0790-20 WAKA

COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz

OUT

VGS VDS

R1 L1

C10

C11

C11 L10

L10

C12

C12L11

L11 L20

L20 C20

C20 C21

C21

C22

<R>

NE5550234

R09DS0039EJ0300 Rev.3.00 Page 4 of 14

Mar 12, 2013

TYPICAL CHARACTERISTICS 1 (TA = 25°C)

RF: f = 460MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –15 to 20 dBm

IM: f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40mA, Pout (2 tone) = 6 to 28 dBm

3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc)

2 Tones Output Power Pout (2 tone) (dBm)

/IM

vs. 2 TONES OUTPUT POWER

2nd Harmonics 2f0 (dBc)

3rd Harmonics 3f0 (dBc)

Output Power Pout (dBm)

, 3f

vs. OUTPUT POWER

Power Gain GP (dB)

Power Added Efficiency add (%)

Input Power Pin (dBm)

POWER GAIN, POWER ADDED

EFFICIENCY vs. INPUT POWER

2f0 - 3.6 V

2f0 - 4.5 V

2f0 - 7.5 V

2f0 - 9 V

3f0 - 3.6 V

3f0 - 4.5 V

3f0 - 9 V

3f0 - 7.5V

3f0 - 6 V

2f0 - 6 V

–70

–10

–20

–30

–40

–50

–60

402520150510 30

IM3 - 3.6 V

IM3 - 4.5 V

IM3 - 7.5 V

IM3 - 9 V

IM5 - 3.6 V

IM5 - 4.5 V

IM5 - 9 V

IM5 - 7.5 V

IM5 - 6 V

IM3 - 6 V

–70

–10

–20

–30

–40

–50

–60

302520150510

Output Power Pout (dBm)

Drain Current IDS (A)

Input Power Pin (dBm)

OUTPUT POWER, DRAIN CURRENT

vs. INPUT POWER

Pout - 3.6 V

Pout - 4.5 V

Pout - 7.5 V

Pout - 9 V

Pout - 6 V

IDS - 7.5 V

IDS - 4.5 V

IDS - 6 V

IDS - 9 V

25201050–20 –10 –5 15 0.0

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

–15

add - 3.6 V

add - 7.5 V

add - 4.5 V

add - 6 V

add - 9 V

Gp - 3.6 V

Gp - 4.5 V

Gp - 7.5 V

Gp - 9 V

Gp - 6 V

40 80

35 70

30 60

25 50

20 40

15 30

10 20

510

25201050–20 –10 –5 15

–15

IDS - 3.6 V

Remark The graphs indicate nominal characteristics.

NE5550234

R09DS0039EJ0300 Rev.3.00 Page 5 of 14

Mar 12, 2013

TEST CIRCUIT SCHEMATIC FOR 157 MHz

C20

C10

IN OUT

C22

C11 C21

VDS

C1 L1R1

VGS

NE5550234

50 Ω50 Ω

L11

L10 R10

COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS

Symbol Value Type Maker

C10 27 pF GQM1882C1H270JB01 Murata

C11 6.8 pF GQM1882C1H6R8DB01 Murata

C20 8.2 pF GQM1882C1H8R2DB01 Murata

C21 27 pF GQM1882C1H270JB01 Murata

C22 100 pF GQM1882C1H101JB01 Murata

C1 1

F GRM21BB31H105KA2L Murata

C2 1

F GRM21BB31H105KA2L Murata

L10 100 nH LL1608-FSLR10J Toko

L11 47 nH D20-47N2 Ohesangyou

L1 74 nH D20-74N7 Ohesangyou

R10 5.6 Ω MCR03J5R6 Rohm

R1 4.7 kΩ MCR03J472 Rohm

PCB − R1766, t = 0.8 mm,

r = 4.8, size = 30 × 40 mm Panasonic

SMA Connecter − WAKA 01K0790-20 WAKA

<R>

NE5550234

R09DS0039EJ0300 Rev.3.00 Page 6 of 14

Mar 12, 2013

COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz

C10

C11 C20 C21

C22

R10

L10

RF IN RF OUT

VGS VDS

L11

NE5550234

R09DS0039EJ0300 Rev.3.00 Page 7 of 14

Mar 12, 2013

TYPICAL CHARACTERISTICS 2 (TA = 25°C)

RF: f = 157 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –10 to 20 dBm

add - 3.6 V

add - 6 V

add - 4.5 V

add - 9 V

add - 7.5 V

Pout - 3.6 V

Pout - 4.5 V

Pout - 6.0 V

Pout - 7.5 V

Pout - 9 V

Output Power Pout (dBm)

Drain Current IDS (A)

Input Power Pin (dBm)

OUTPUT POWER, DRAIN CURRENT

vs. INPUT POWER

0 0.0

40 0.8

35 0.7

30 0.6

25 0.5

20 0.4

15 0.3

10 0.2

5 0.1

251050–15–10 –5 15

Power Gain GP (dB)

Power Added Efficiency add (%)

Input Power Pin (dBm)

POWER GAIN, POWER ADDED

EFFICIENCY vs. INPUT POWER

Gp - 3.6 V

Gp - 4.5 V

Gp - 6 V

Gp - 7.5 V

Gp - 9 V

40 80

35 70

30 60

25 50

20 40

15 30

10 20

510

IDS - 3.6 V

IDS - 6 V

IDS - 4.5 V

IDS - 9 V

IDS - 7.5 V

20 251050–15–10 –5 15 20

Remark The graphs indicate nominal characteristics.

NE5550234

R09DS0039EJ0300 Rev.3.00 Page 8 of 14

Mar 12, 2013

TEST CIRCUIT SCHEMATIC FOR 900 MHz

C10

IN OUT

C22

C21

C20

C1 L1R1

NE5550234

50 Ω50 Ω

L11

L10

COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS

Symbol Value Type Maker

C10 10 pF GQM1882C1H100JB01 Murata

C20 6.8 pF GQM1882C1H6R8DB01 Murata

C21 1 pF GQM1884C2A1R0CB01 Murata

C22 100 pF GQM1882C1H101JB01 Murata

C1 1

F GRM21BB31H105KA2L Murata

C2 1

F GRM21BB31H105KA2L Murata

L10 2.7 nH LL1608-FSL2N7S Toko

L1 74 nH D20-74N7 Ohesangyou

R1 4.7 kΩ MCR03J472 Rohm

PCB − R1766, t = 0.8 mm, εr = 4.8, size = 30 × 40 mm Panasonic

SMA Connecter − WAKA 01K0790-20 WAKA

<R>

NE5550234

R09DS0039EJ0300 Rev.3.00 Page 9 of 14

Mar 12, 2013

COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz

C10

C20 C21

C22

R1 L1

L10

RF IN RF OUT

VGS VDS

NE5550234

R09DS0039EJ0300 Rev.3.00 Page 10 of 14

Mar 12, 2013

TYPICAL CHARACTERISTICS 3 (TA = 25°C)

RF: f = 900 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –10 to 20 dBm

Input Power P

(dBm)

POWER GAIN, DRAIN CURRENT

vs. INPUT POWER

100

25201050–15–10 –5 15 25201050–15–10 –5 15

Power Gain G

(dB)

Power Added Efficiency

add

(%)

Input Power P

(dBm)

OUTPUT POWER, POWER ADDED

EFFICIENCY vs. INPUT POWER

Output Power P

out

(dBm)

Drain Current I

(A)

140

120

0.5

0.4

0.3

0.2

0.1

100

0.7

0.6

add

- 6.0 V

add

- 4.5 V

add

- 7.5 V

add

- 9 V

add

- 3.6 V

- 4.5 V

- 6 V

- 7.5 V

- 9 V

- 3.6 V

- 6.0 V

- 4.5 V

- 9 V

- 7.5 V

out

- 3.6 V

out

- 4.5 V

out

- 6.0 V

out

- 7.5 V

out

- 9 V

Remark The graphs indicate nominal characteristics.

NE5550234

R09DS0039EJ0300 Rev.3.00 Page 11 of 14

Mar 12, 2013

S-PARAMETERS

S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the

parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[Products] → [RF Devices] → [Device Parameters]

URL http://www.renesas.com/products/microwave/

NE5550234

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Mar 12, 2013

MOUNTING PAD LAYOUT DIMENSIONS

3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)

2.2

1.0

2.0 2.0

1.0 1.0

1.4

0.4 0.92.8

45°45°

Remark The mounting pad layout in this document is for reference only.

When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder

bridge and so on, in order to optimize the design.

NE5550234

R09DS0039EJ0300 Rev.3.00 Page 13 of 14

Mar 12, 2013

PACKAGE DIMENSIONS

3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)

(Bottom View) (Side View)

PIN CONNECTIONS

1. Drain

2. Source

3. Gate

1.5±0.1

0.41

+0.03

–0.06

4.5±0.1

0.42±0.060.42±0.06

1.6±0.2

3.0

1.5

2.5±0.1

4.0±0.25

0.8 MIN.

0.47±0.06

NE5550234

R09DS0039EJ0300 Rev.3.00 Page 14 of 14

Mar 12, 2013

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering methods and

conditions other than those recommended below, contact your nearby sales office.

Soldering Method Soldering Conditions Condition Symbol

Infrared Reflow Peak temperature (package surface temperature) : 260°C or below

Time at peak temperature : 10 seconds or less

Time at temperature of 220°C or higher : 60 seconds or less

Preheating time at 120 to 180°C : 120±30 seconds

Maximum number of reflow processes : 3 times

Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below

IR260

Wave Soldering Peak temperature (molten solder temperature) : 260°C or below

Time at peak temperature : 10 seconds or less

Preheating temperature (package surface temperature)

: 120°C or below

Maximum number of flow processes : 1 time

Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below

WS260

Partial Heating Peak temperature (terminal temperature) : 350°C or below

Soldering time (per side of device) : 3 seconds or less

Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below

HS350

CAUTION

Do not use different soldering methods together (except for partial heating).

All trademarks and registered trademarks are the property of their respective owners.

C - 1

Revision History NE5550234 Data Sheet

Description

Rev. Date

Page Summary

1.00 Apr 25, 2012 − First edition issued

2.00 Jul 04, 2012 p.2 Modification of ELECTRICAL CHARACTERISTICS

3.00 Mar 12, 2013 P3

Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING

ELECTRICAL CHARACTERISTICS

P5 Modification of TEST CIRCUIT SCHEMATIC FOR 157 MHz

Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING

ELECTRICAL CHARACTERISTICS

Notice

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the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the

use of these circuits, software, or information.

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assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.

3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or

technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or

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(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.

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ALE

FFI

[Colophon 2.2]