FZT689BTA - DIODES INC - Datasheet.Cloud

FZT689B

Document number: DS33155 Rev. 4 - 2

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FZT689B

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20V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

Features

 BVCEO > 20V

 BVCBO > 20V

 IC = 3.0A High Continuous Current

 hFE > 400 @ 2A and Low Saturation Voltage

 Extremely Low Equivalent On-Resistance; RCE(SAT) 92mΩ at 3A

 Complementary PNP Type: FZT789B

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT223

 Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish - Matte Tin Plated Leads. Solderable per

MIL-STD-202, Method 208

 Weight: 0.112 grams (Approximate)

Applications

 Darlington Replacement

 Flash Gun Convertors and Battery Powered Circuits

Ordering Information (Note 4)

Product

Compliance

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

FZT689BTA

AEC-Q101

FZT689B

7

12

1,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SOT223

Top View

Device Symbol

Top View

Pin-Out

Green

C

E

B

C

E

C

B

YWW

FZT

689B

FZT 689B = Product Type Marking Code

YWW = Date Code Marking

Y or Y = Last Digit of Year (ex: 5= 2015)

WW or WW = Week Code (01~53)

FZT689B

Document number: DS33155 Rev. 4 - 2

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A Product Line of

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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

20

V

Collector-Emitter Voltage

VCEO

20

V

Emitter-Base Voltage

VEBO

7

V

Continuous Collector Current

IC

3

A

Peak Pulse Current

ICM

8

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

PD

3.0

W

(Note 6)

2.0

(Note 7)

1.6

(Note 8)

1.2

Thermal Resistance, Junction to Ambient

(Note 5)

RJA

41.7

°C/W

(Note 6)

62.5

(Note 7)

78.1

(Note 8)

104

Thermal Resistance Junction to Lead

(Note 9)

RJL

12.9

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 10)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under

still air conditions whilst operating in a steady-state.

6. Same as Note 6, except the device is mounted on 25mm x 25mm 2oz copper.

7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.

8. Same as Note 6, except the device is mounted on minimum recommended pad layout.

9. Thermal resistance from junction to solder-point (at the end of the collector lead).

10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

FZT689B

Document number: DS33155 Rev. 4 - 2

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Thermal Characteristics and Derating Information

100µ 1m 10m 100m 110 100 1k

0

10

20

30

40

50

60

70

020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

50mm x 50mm

2oz FR4

25mm x 25mm

2oz FR4

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 110 100 1k

0

10

20

30

40

50

Tamb=25°C

25mm x 25mm

2oz FR4

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

100µ 1m 10m 100m 110 100 1k

1

10

100

25mm x 25mm

2oz FR4

50mm x 50mm

2oz FR4

Single Pulse

Tamb=25°C

Pulse Power Dissipation

Pulse Width (s)

Max Power Dissipation (W)

D=0.1

D=0.05

Single Pulse

D=0.2

D=0.5

Tamb=25°C

50mm x 50mm

2oz FR4

Transient Thermal Impedance

Pulse Width (s)

Thermal Resistance (°C/W)

FZT689B

Document number: DS33155 Rev. 4 - 2

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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

20

—

V

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

20

—

V

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

7

—

V

IE = 100µA

Collector-Base Cut-Off Current

ICBO

—

0.1

µA

VCB = 16V

Emitter Cut-Off Current

IEBO

—

0.1

µA

VEB = 5.6V

DC Current Gain (Note 11)

hFE

500

400

150

—

IC = 0.1A, VCE = 2V

IC = 2A, VCE = 2V

IC = 6A, VCE = 2V

Collector-Emitter Saturation Voltage (Note 11)

VCE(sat)

—

0.10

0.50

0.45

V

IC = 0.1A, IB = 0.5mA

IC = 2A, IB = 10mA

IC = 3A, IB = 20mA

Base-Emitter Saturation Voltage (Note 11)

VBE(sat)

—

0.9

V

IC = 1A, IB = 10mA

Base-Emitter Turn-On Voltage (Note 11)

VBE(on)

—

0.9

V

IC = 1A, VCE = 2V

Input Capacitance

Cibo

—

200

—

pF

VEB = 0.5V, f = 1MHz

Output Capacitance

Cobo

—

16

—

pF

VCB = 10V, f = 1MHz

Current Gain-Bandwidth Product

fT

150

—

MHz

VCE = 5V, IC = 50mA, f=50MHz

Turn-On Time

ton

—

30

—

ns

VCC = 10V, IC = 500mA

IB1 = -IB2 = 50mA

Turn-Off Time

toff

—

800

—

ns

Note: 11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.

FZT689B

Document number: DS33155 Rev. 4 - 2

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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

FZT689B

Document number: DS33155 Rev. 4 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

SOT223

Dim

Min

Max

Typ

A

1.55

1.65

1.60

A1

0.010

0.15

0.05

b

0.60

0.80

0.70

b1

2.90

3.10

3.00

C

0.20

0.30

0.25

D

6.45

6.55

6.50

E

3.45

3.55

3.50

E1

6.90

7.10

7.00

e

-

4.60

e1

-

2.30

L

0.85

1.05

0.95

Q

0.84

0.94

0.89

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions

Value (in mm)

C

2.30

C1

6.40

X

1.20

X1

3.30

Y

1.60

Y1

1.60

Y2

8.00

A1

A

7°

D

b

e

e1

b1

C

E1

L

0°-10°

Q

E

0.25

Seating

Plane

Gauge

Plane

X1

Y1

Y

XC

C1 Y2

FZT689B

Document number: DS33155 Rev. 4 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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