2SC1061 NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
! Compleme n t to 2SA 6 71
ABSOLUTE MAXIMUM RATINGS (TA=25℃
℃℃
℃)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
50
50
7
3
25
150
-50~150
V
V
V
A
W
℃
℃℃
℃
℃
℃℃
℃
ELECTRICAL CHARACTERISTICS (TA=25℃
℃℃
℃)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Produ ct
I
CBO
IEBO
hFE1
VCE(sat)
fT
V
CB= 50V , IE=0
V
EB= 7V , IC=0
V
CE= 4V , IC=1A
I
C=3A , IB=0.3A
V
CE= 5V , IC=0.5A
35
8
100
100
200
1.0
µA
µA
V
M
HZ
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
