Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1008 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.8 2. BASE W (Tamb=25) 3. COLLECTOR Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100A , IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 8 V Collector cut-off current ICBO VCB=60 V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 5 V , 0.1 A DC current gain hFE VCE= 2 V, IC=50mA Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB=50 mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.1 V fT VCE=10V, IC= 50mA Transition frequency IC=0 40 400 30 MHz CLASSIFICATION OF hFE Rank Range R O Y G 40-80 70-140 120-240 200-400