1N5819HW1
Document number: DS37090 Rev. 4 - 2
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1N5819HW1
1A SBR®
SUPER BARRIER RECTIFIER
Product Summary
VRRM (V)
IO (A)
VF(MAX) (V)@ +25°C
40
1
0.51
Description and Applications
The 1N5819HW1 is a single rectifier packaged in SOD123F.
Offering low VF and excellent high temperature stability this device is
ideal for use in general rectification applications as a:
Boost Diode
Blocking Diode
Features and Benefits
Low forward voltage (VF) minimizes conduction losses and
improving efficiency
Reduced high temperature reverse leakage; Increased reliability
against thermal runaway failure in high temperature operation
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOD123F
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.0016 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
1N5819HW1-7-F
SOD123F
3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2013
2014
2015
2016
2017
2018
2019
2020
Code
A
B
C
D
E
F
G
H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
SOD123F
SL = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex.: C = 2015)
M = Month (ex: 9 = September)
Bottom View
SBR is a registered trademark of Diodes Incorporated.
Green
1N5819HW1
Document number: DS37090 Rev. 4 - 2
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© Diodes Incorporated
1N5819HW1
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
40
V
RMS Reverse Voltage
VR(RMS)
28
V
Average Rectified Output Current
IO
1
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
30
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Typical Thermal Resistance, Junction to Ambient (Note 5)
RθJA
135
°C/W
Typical Thermal Resistance, Junction to Case (Note 5)
RθJC
20
°C/W
Typical Thermal Resistance, Junction to Ambient (Note 6)
RθJA
75
°C/W
Typical Thermal Resistance, Junction to Case (Note 6)
RθJC
12
°C/W
Operating Junction Temperature Range
TJ
-55 to +125
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
40
—
—
V
IR = 1.0mA
Forward Voltage Drop
VF
—
—
—
—
—
—
0.44
0.36
0.64
0.63
0.35
0.51
—
0.75
—
V
IF = 0.1A, TJ = +25°C
IF = 1A, TJ = +25°C
IF = 1A, TJ = +125°C
IF = 3A, TJ = +25°C
IF = 3A, TJ = +125°C
Leakage Current (Note 7)
IR
—
—
—
—
0.008
0.010
0.050
—
—
0.075
0.5
50
mA
VR = 4V, TJ = +25°C
VR = 6V, TJ = +25°C
VR = 40V, TJ = +25°C
VR = 40V, TJ = +125°C
Reverse Recovery Time
tRR
—
15
—
ns
IF = 10mA, IRRM = 0.1IR,
TA = +25°C
Total Capacitance
CT
—
30
—
pF
VR = 10V, f = 1MHz
Notes: 5. Device mounted on 1 x MRP FR-4 PC board, 2oz.
6. Device mounted on 1inch sq. copper pad, 2oz.
7. Short duration pulse test used to minimize self-heating effect.
1N5819HW1
Document number: DS37090 Rev. 4 - 2
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1N5819HW1
0.0001
0.001
0.01
0.1
1
10
0100 200 300 400 500 600 700 800 900 1000
I , INSTANTANEOUS FORWARD CURRENT (A)
F
Figure 1 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
T =100°C
A
T = 75°C
A
T = 25°C
A
T =125°C
A
T = 0°C
A
T = -55°C
A
0.01
0.1
1
10
100
1000
10000
100000
010 20 30 40
I , LEAKAGE CURRENT ( A)
Rµ
T = 25°C
A
T = 75°C
A
T = 100°C
A
T = 125°C
A
T = 0°C
A
T = -55°C
A
V , REVERSE VOLTAGE (V)
R
Figure 2 Typical Reverse Characteristics
10
100
1000
010 20 30 40
CT, JUNCTION CAPACITANCE (pF)
VR, REVERSE VOLTAGE (V)
Figure 4. Typical Junction Capacitance
f=1MHz
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125
I , AVERAGE RECTIFIED OUTPUT CURRENT (A)
O
Note 5
Note 6
Figure 3 DC Forward Current Derating Curve
T , AMBIENT TEMPERATURE (°C)
A
1N5819HW1
Document number: DS37090 Rev. 4 - 2
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October 2015
© Diodes Incorporated
1N5819HW1
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
b
D
He
E
A
c
L
X1
G
Y
X
SOD123F (Type B)
Dim
Min
Max
Typ
A
0.81
1.15
--
b
0.80
1.35
--
c
0.05
0.30
--
D
1.70
1.90
1.80
E
2.60
2.80
2.70
He
3.30
3.70
3.50
L
0.35
0.85
--
All Dimensions in mm
Dimensions
Value
(in mm)
G
1.90
X
1.00
X1
3.90
Y
1.50
1N5819HW1
Document number: DS37090 Rev. 4 - 2
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October 2015
© Diodes Incorporated
1N5819HW1
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