SMBJ SERIES
SMB
All Dimensions in millimeter
SMB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
4.06 4.57
3.94 3.30
1.96 2.21
0.31 0.15
5.21 5.59
0.05 0.20
2.01 2.50
0.76 1.52
C
B
A
H
E
F
G
D
FEATURES
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification 94V-O
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0ns for
Uni-direction,less than 5.0ns for Bi-direction,form 0 Volts
to BV min
MECHANICAL DATA
Case : Molded plastic
Polarity : by cathode band denotes uni-directional device
none cathode band denotes bi-directional device
Weight : 0.003 ounces, 0.093 gram
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
STAND-OFF VOLTAGE -
5.0
to
350
Volts
POWER DISSIPATION -
600
WATTS
NOTES :1. Non-repetitive current pulse, per fig. 3 and derated above T
J
= 25
per fig.1.
2. Only for unidirectional units.
3. V
F
= 3.5V on SMBJ5.0 thru SMBJ90A devices and V
F
= 5.0V on SMBJ100 thru SMBJ350A devices.
4. Thermal resistance from junction to ambient, lead and case.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SEMICONDUCTOR
LITE-ON
REV. 10, Nov-2011, KSIB02
I
FSM
Peak Forward Surge Current 8.3ms single
half sine-wave@Tj=25 (Note 2)
100
AMPS.
UNIT
P
M(AV)
1.5
WATTS
Steady State Power Dissipation at TL =120 lead
lenghts 0.375" (9.5mm) , see fig.4
Without Heatshink
P
PK
WATTS
PEAK POWER DISSIPATION AT T
J
= 25 ,
TP = 1ms (Note 1)
SYMBOLS VALUE
600
CHARACTERISTICS
Maximum Instantaneous forward voltage
at 50A for unidirectional devices only (Note 3)
V
F
SEE NOTE 3 Volts
R
0JL
Typical Thermal Resistance (Note 4)
90
21
25
C/W
R
0JA
R
0JC
T
J
Operating Temperature Range
-55 to +175
T
STG
Storage Temperature Range
-55 to +175
C
C
RATING AND CHARACTERISTIC CURVES
SMBJ SERIES
FIG.1 - PULSE DERATING CURVE
PEAK PULSE DERATING IN % OFPEAK
POWER OR CURRENT
25 75 100 125 150
0
50
50
100
0175
75
25
200
10 X 1000 WAVEFORM
AS DEFINED BY R.E.A.
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
15 10 50 100
220
0
20
Pulse Width 8.3ms
Single Half-Sine-Wave
40
60
80
100
120
FIG.4 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
STAND-OFF VOLTAGE, VOLTS
10
1100
10000
1000
100
10
1000
Bi-directional
T
J
= 25 C
Uni-directional
PM
(AV)
STEADY STATE POWER DISSIPATION (W)
FIG.6 - STEADY STATE POWER DERATING CURVE
TL,LEAD TEMPERATURE,
25 75 100 125 150
0.0
50
0175 200
0.5
1.0
1.5
2.0
2.5
DC Current
JUNCTION TEMPERATURE,
FIG.5 - PULSE RATING CURVE
P
P
, PEAK POWER ( K
W
)
T
P
, PULSE WIDTH
0.1
1.0
10
0.1us 1.0us 10us 100us 1.0ms 10ms
100
T
A
=25 C
5.0mm LEAD AREAS
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG 3.
FIG.3 - PULSE WAVEFORM
0
0
I
P,
PEAK PULSE CURRENT , (% )
T , TIME ( ms )
50
100
1.0 2.0 3.0 4.0
T
R
=10us
Peak value (I
RSM)
TP
10 x 1000 waveform as
defined by R.E.A.
Pulse width (T
P
) is defined
as that point where the
peak current decays to
50% of I
RSM
T
J
=25 C
I
RSM
2
Half value=
Working
PeakReverse
Voltage
Breakdowm voltage
VBR Volts
Maximum
Reverse Voltage
at IRSM
(Clamping
Voltage)
Maximum
Reverse Surge
Current
Maximum
Reverse
Leakage at
VRWM
(UNI) (BI) VRWM(V) Min. Max. @IT( mA) VRSM(V) IRSM(A) IR (uA)
SMBJ5.0A SMBJ5.0CA KE AE 5.0 6.40 7.07 10 9.2 65.2 800
SMBJ6.0A SMBJ6.0CA KG AG 6.0 6.67 7.37 10 10.3 58.3 800
SMBJ6.5A SMBJ6.5CA KK AK 6.5 7.22 7.98 10 11.2 53.6 500
SMBJ7.0A SMBJ7.0CA KM AM 7.0 7.78 8.60 10 12.0 50.0 200
SMBJ7.5A SMBJ7.5CA KP AP 7.5 8.33 9.21 1.0 12.9 46.5 100
SMBJ8.0A SMBJ8.0CA KR AR 8.0 8.89 9.83 1.0 13.6 44.1 50.0
SMBJ8.5A SMBJ8.5CA KT AT 8.5 9.44 10.4 1.0 14.4 41.7 20.0
SMBJ9.0A SMBJ9.0CA KV AV 9.0 10.0 11.1 1.0 15.4 39.0 10.0
SMBJ10A SMBJ10CA KX AX 10.0 11.1 12.3 1.0 17.0 35.3 5.0
SMBJ11A SMBJ11CA KZ AZ 11.0 12.2 13.5 1.0 18.2 33.0 5.0
SMBJ12A SMBJ12CA LE BE 12.0 13.3 14.7 1.0 19.9 30.2 5.0
SMBJ13A SMBJ13CA LG BG 13.0 14.4 15.9 1.0 21.5 27.9 5.0
SMBJ14A SMBJ14CA LK BK 14.0 15.6 17.2 1.0 23.2 25.8 5.0
SMBJ15A SMBJ15CA LM BM 15.0 16.7 18.5 1.0 24.4 24.0 5.0
SMBJ16A SMBJ16CA LP BP 16.0 17.8 19.7 1.0 26.0 23.1 5.0
SMBJ17A SMBJ17CA LR BR 17.0 18.9 20.9 1.0 27.6 21.7 5.0
SMBJ18A SMBJ18CA LT BT 18.0 20.0 22.1 1.0 29.2 20.5 5.0
SMBJ20A SMBJ20CA LV BV 20.0 22.2 24.5 1.0 32.4 18.5 5.0
SMBJ22A SMBJ22CA LX BX 22.0 24.4 27.0 1.0 35.5 16.9 5.0
SMBJ24A SMBJ24CA LZ BZ 24.0 26.7 29.5 1.0 38.9 15.4 5.0
SMBJ26A SMBJ26CA ME CE 26.0 28.9 31.9 1.0 42.1 14.2 5.0
SMBJ28A SMBJ28CA MG CG 28.0 31.1 34.4 1.0 45.4 13.2 5.0
SMBJ30A SMBJ30CA MK CK 30.0 33.3 36.8 1.0 48.4 12.4 5.0
SMBJ33A SMBJ33CA MM CM 33.0 36.7 40.6 1.0 53.3 11.3 5.0
SMBJ36A SMBJ36CA MP CP 36.0 40.0 44.2 1.0 58.1 10.3 5.0
SMBJ40A SMBJ40CA MR CR 40.0 44.4 49.1 1.0 64.5 9.3 5.0
SMBJ43A SMBJ43CA MT CT 43.0 47.8 52.8 1.0 69.4 8.6 5.0
SMBJ45A SMBJ45CA MV CV 45.0 50.0 55.3 1.0 72.7 8.3 5.0
SMBJ48A SMBJ48CA MX CX 48.0 53.3 58.9 1.0 77.4 7.7 5.0
SMBJ51A SMBJ51CA MZ CZ 51.0 56.7 62.7 1.0 82.4 7.3 5.0
SMBJ54A SMBJ54CA NE DE 54.0 60.0 66.3 1.0 87.1 6.9 5.0
SMBJ58A SMBJ58CA NG DG 58.0 64.4 71.2 1.0 93.6 6.4 5.0
SMBJ60A SMBJ60CA NK DK 60.0 66.7 73.7 1.0 96.8 6.2 5.0
SMBJ64A SMBJ64CA NM DM 64.0 71.1 78.6 1.0 103 5.8 5.0
SMBJ70A SMBJ70CA NP DP 70.0 77.8 86.0 1.0 113 5.3 5.0
SMBJ75A SMBJ75CA NR DR 75.0 83.3 92.1 1.0 121 4.9 5.0
SMBJ78A SMBJ78CA NT DT 78.0 86.7 95.8 1.0 126 4.7 5.0
SMBJ85A SMBJ85CA NV DV 85.0 94.4 104 1.0 137 4.4 5.0
SMBJ90A SMBJ90CA NX DX 90.0 100 111 1.0 146 4.1 5.0
SMBJ100A SMBJ100CA NZ DZ 100.0 111 123 1.0 162 3.7 5.0
Device
Uni-
directional
Device
Bi-
directional
Device
Marking
code
SEMICONDUCTOR
LITE-ON
Working
PeakReverse
Voltage
Breakdowm voltage
VBR Volts
Maximum
Reverse Voltage
at IRSM
(Clamping
Voltage)
Maximum
Reverse Surge
Current
Maximum
Reverse
Leakage at
VRWM
(UNI) (BI) VRWM(V) Min. Max. @IT( mA) VRSM(V) IRSM(A) IR (uA)
SMBJ110A SMBJ110CA PE EE 110.0 122 135 1.0 177 3.4 5.0
SMBJ120A SMBJ120CA PG EG 120.0 133 147 1.0 193 3.1 5.0
SMBJ130A SMBJ130CA PK EK 130.0 144 159 1.0 209 2.9 5.0
SMBJ150A SMBJ150CA PM EM 150.0 167 185 1.0 243 2.5 5.0
SMBJ160A SMBJ160CA PP EP 160.0 178 197 1.0 259 2.3 5.0
SMBJ170A SMBJ170CA PR ER 170.0 189 209 1.0 275 2.2 5.0
SMBJ188A SMBJ188CA PT ET 188.0 209 231 1.0 328 1.83 5.0
SMBJ200A SMBJ200CA PV EV 200.0 224 247 1.0 324 1.9 5.0
SMBJ220A SMBJ220CA PX EX 220.0 246 272 1.0 356 1.7 5.0
SMBJ350A QG 350.0 391 432 1.0 567 1.1 5.0
NOTE :
1) Suffix 'A ' denotes 5% tolerance device,no suffix denotes 10 % tolerance device.
2) Add suffix 'C 'or ' CA ' after part number to specify Bi-directional devices.
3) For Bi-Directional devices having VR of 10 volts and under, the IR limit is double .
For Uni-directional devices VF max=3.5v at if=50 A ,0.5 sine wave of 8.3 msec .pulse width.
Device
Uni-
directional
Device
Bi-
directional
Device
Marking
code
SEMICONDUCTOR
LITE-ON
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SMBJ SERIES
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