LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon MMBT918LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318-08, STYLE 6 MAXIMUM RATINGS Rating SOT-23 (TO-236AB) Symbol Value Unit Collector-Emitter Voltage V CEO 15 Vdc Collector-Base Voltage V CBO 30 Vdc Emitter-Base Voltage V 3.0 Vdc 50 mAdc Collector Current -- Continuous EBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C 417 -55 to +150 C/W C RJA TJ , Tstg Unit DEVICE MARKING MMBT9181LT1 = M3B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 15 -- Vdc V (BR)CBO 30 -- Vdc V 3.0 -- Vdc -- 50 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 3.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 1.0 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0) Collector Cutoff Current ( V CB = 15 Vdc, I E = 0) (BR)EBO I CBO 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. O2-1/2 LESHAN RADIO COMPANY, LTD. MMBT918LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit hFE 20 -- -- VCE(sat) -- 0.4 Vdc V -- 1.0 Vdc 600 -- MHz -- -- 3.0 1.7 C ibo -- 2.0 pF NF -- 6.0 dB P out 30 -- mW G pe 11 -- dB ON CHARACTERISTICS DC Current Gain (I C = 3.0 mAdc, V CE = 1.0 Vdc) Collector-Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) Base-Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) BE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz) Output Capacitance (V CB = 0 Vdc, I E = 0, f = 1.0 MHz) (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure (I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 , f = 60 MHz) (Figure 1) Power Output (I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz) Common-Emitter Amplifier Power Gain (I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz) fT C obo pF V CC V BB EXTERNAL 100 k 1000 pF BYPASS 0.018 F C 0.018 F 3 50 RF VM G 0.018 F 0.018 F NF TEST CONDITIONS I C = 1.0 mA V CE = 6.0 VOLTS R S = 50 f = 60 MHz G pe TEST CONDITIONS I C = 6.0 mA V CE = 12 VOLTS f = 200 MHz Figure 1. NF, G pe Measurement Circuit 20-200 O2-2/2