LITE-ON SEMICONDUCTOR T1M5F-A SERIES TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-92 (TO-226AA) FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 20 V/msec at 110) High Surge Current of 10 Amps Pb-Free Package TO-92 DIM. MIN. MAX. A 4.45 B 4.32 5.33 C 3.18 4.19 4.70 D 1.15 1.39 E 2.42 2.66 F 12.7 ------ G 2.04 2.66 I 3.43 ----- All Dimensions in millimeter PIN ASSIGNMENT 1 Main Terminal 1 2 Gate 3 Main Terminal 2 MAXIMUM RATINGS (Tj= 25 unless otherwise noticed) Rating Symbol Value Unit VDRM, VRRM 400 600 Volts IT(RMS) 1.0 Amp ITSM 10.0 Amps Peak Repetitive Off- State Voltage (TJ= -40 to 125, Sine Wave, 50 to 60 Hz; Gate Open) T1M5F400A T1M5F600A On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = 50) Peak Non-Repetitive Surge Current Full Cycle Sine Wave 60 Hz (Tj =25) 2 2 Circuit Fusing Consideration (t = 8.3 ms) It 0.40 As Peak Gate Power ( t 2.0us ,Tc = 80) PGM 5.0 Watt PG(AV) 0.1 Watt Peak Gate Current ( t 2.0us ,Tc = 80) IGM 1.0 Amp Peak Gate Voltage ( t 2.0us ,Tc = 80) VGM 5.0 Volts Operating Junction Temperature Range TJ -40 to +110 Tstg -40 to +150 Average Gate Power (Tc = 80, t 8.3 ms ) Storage Temperature Range Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV. 5, Oct-2010, KTXD11 RATING AND CHARACTERISTIC CURVES T1M5F-A SERIES THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Lead - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol Value Unit RthJL RthJC RthJA 60 75 150 /W TL 260 ELECTRICAL CHARACTERISTICS (Tc=25 unless otherwise noted) Characteristics Symbol Min Typ Max Unit IDRM IRRM ------- ------- 10 100 uA uA Peak Forward On-State Voltage (ITM= 1A Peak @Tp 2.0 ms, Duty Cycle 2%) VTM ---- ---- 1.9 Volts Gate Trigger Current (VD = 12 Vdc; RL = 100 Ohms) IGT1 IGT2 IGT3 IGT4 ------------- ------------- 5.0 5.0 5.0 7.0 mA Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) IH ---- 1.5 10 mA Turn-On Time (VD = Rated VDRM , ITM = 1.0 A pk, IG = 25 mA) tgt ---- 2 ---- us VGT1 VGT2 VGT3 VGT4 ------------- 0.66 0.77 0.84 0.88 2.0 2.0 2.0 2.5 Volts IL1 IL2 IL3 IL4 ------------- 1.6 10.5 1.5 2.5 15 20 15 15 mA VGD 0.1 ---- ---- Volts dv/dt 20 OFF CHARACTERISTICS Peak Reptitive Forward or Reverse Blocking Current (VD=Rated VDRM and VRRM; Gate OPen) Tj =25 Tj =110 ON CHARACTERISTICS Gate Trigger Voltage (VD = 12 Vdc; RL =100 Ohms) Latching Current (VD=12V,IG= 10 mA) Gate Non-Trigger Voltage (VD= 12V, RL= 100 Ohms , TJ=110 ) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD=Rated VDRM,Exponential Waveform, Gate Open, TJ=110) 60 ---- V/us RATING AND CHARACTERISTIC CURVES T1M5F-A SERIES 1.2 IT(RMS), RMS ON-STATE CURRENT(AMPS) IT(RMS), RMS ON-STATE CURRENT(AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0 25 50 75 100 0 125 25 50 75 100 Ta, AMBIENT TEMPERATURE() Tc, CASE TEMPERATURE() Figure 1. RMS Current Deratiing Versus Ambient Temperature Figure 2. RMS Current Deratiing Versus Case Temperature 1.2 125 10 0.8 tpy. 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IT(RMS),RMS ON-STATE CURRENT (AMPS) Figure 3. Power Dissipation 0.9 1.0 ITM, INSTANTANEOUS ON-STATE CURRENT (AMP) P(AV), POWER PISSIPATION (WATTS) 1.0 max. 1 0.1 0.01 0.4 0.8 1.2 1.6 2.0 2.4 VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 4. On-State Characteristics 2.8 RATING AND CHARACTERISTIC CURVES T1M5F-A SERIES 16 ITSM, PEAK SURGE CURRENT (AMPS) R(t), TRANSENT THERMAL RESISTANCE (NORMALIZED) 1 0.1 12 8 4 TJ=25 f= 60Hz CYCLE 0 0.01 1.00E-1 1.00E+0 1.00E+1 1.00E+2 1.00E+3 1 1.00E+4 100 NUMBER OF CYCLES Figure 5. Transient Thermal Response Figure 6. Maximum Allowable Surge Current 100.0 1.2 Q4 ITSM, PEAK SURGE CURRENT (AMPS) 1.1 ITSM, PEAK SURGE CURRENT (AMPS) 10 t, TIME (ms) Q4 10.0 Q3 Q2 Q1 1.0 Q3 1.0 Q2 0.9 Q1 0.8 0.7 0.6 0.5 0.4 0.1 0.3 -50 -25 0 25 50 75 100 125 -50 0 25 50 75 100 Tj, JUNCTION TEMPERATURE () Figure 7. Typical Gate Trigger Current Versus Junction Temperature Figure 8. Typical Gate Trigger Voltage Versus Junction Temperature 100 125 10 IH, HOLDING CURRENT (mA) IL, LATCHING CURRENT (mA) -25 Tj, JUNCTION TEMPERATURE () Q2 10 Q4 Q3 1 Q1 0.1 MT2 Negative 1 MT2 Positive 0.1 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 Tj, JUNCTION TEMPERATURE () Tj, JUNCTION TEMPERATURE () Figure 9. Typical Latching Current Versus Junction Temperature Figure 10. Typical Holding Current Versus Junction Temperature 125 Legal Disclaimer Notice T1M5F-A SERIES Important Notice and Disclaimer LSC reserves the right to make changes to this document and its products and specifications at any time without notice. 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