SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS – BCX19 - U1
BCX19R - U4
COMPLEMENTARY TYPES - BCX17
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage VCES 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 1000 mA
Continuous Collector Current IC500 mA
Base Current IB100 mA
Peak Base Current IBM 200 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current ICBO 100
200 nA
µAVCB
=20V
VCB
=20V, Tj=150°C
Emitter-Base Cut-Off
Current IEBO 10 µAVEB =5V
Base-Emitter Voltage VBE 1.2 V IC =500mA, VCE =1V*
Collector-Emitter
Saturation Voltage VCE(sat) 620 mV IC =500mA, IB =50mA*
Static Forward Current
Transfer Ratio hFE 100
70
40
600 IC =100mA, VCE =1V
IC =300mA, VCE =1V*
IC =500mA, VCE =1V*
Transition Frequency fT200 MHz IC =10mA, VCE =5V
f =35MHz
Output Capacitance Cobo 5.0 pF VCB =10V, f =1MHz
*Measured under pulsed conditions.
BCX19
C
B
E
SOT23
TBA
