1N5913B THRU 1N5956B 1.5W SILICON ZENER DIODE VOLTAGE RANGE 3.3 to 200 Volts FEATURES Zener voltage 3.3V to 200V * Withstands large surge stresses MECHANICAL CHARACTERISTICS : CASE: DO - 41 molded plastic. * FINISH: Corrosion resistant.Leads are solderable. * THERMAL RESISTANCE :60C/W junction to lead at 0.375inches from body. x POLARITY: Banded end is cathode. * WEIGHT:0.4 grams( Typical) . MAXIMUM RATINGS Junction and Storage Temperature; 55Cto + 175C DC Power Dissipation; 1.5 Watt 12mW/C above 75C Forward Voltage @ 200mA:1.2 Volts DO-41 0.107, 271 gMAX- | oT 0.08220.002 110 0.81320.051 | arog MN- | 0.205 3.207 MAX. 110 MIN. All dimensions in "sx" * ELECTRICAL CHARCTERISTICS @ T_30C JEDEC | ZENER c TEST DYNAMIC KINEE wee REVERSE REVERSE MAK DC. NOTE 1 No suffix indicates a TYEP. | VOLTAGE | CURRENT | IMPEDAN CURRENT | IMPEDANCE IT U 9 : NUMBER | (Vz) lzT ZT IK 22K IR (MAX) YR (zm) + 20% tolerance on nominal (Note 1) Vz. Suffix A denotes a + VOLTS mA a mA a Adc VOLTS mA TNBOTS 3.3 113.6 70 1.0 500 700 1.0 454 10% tolerance, B denotes a+ insers 36 2 8.0 10 500 ze V3 ae 5% tolerance, C denotes a + 1N5916 43 87.2 6.0 1.0 500 5.0 1.0 348 2% tolerance, and D denotes 11N5Q17 47 79.8 5.0 1.0 500 5.0 1.5 319 9 1NES18 6.1 BS 4.0 1.0 350 5.0 2.0 204 a+ 1% tolerance. 1NEQ19 56 66.9 2.0 1.0 250 5.0 3.0 267 11N5920 6.2 60.5 2.0 1.0 200 5.0 4.0 241 i 11N5921 68 55.1 2.5 1.0 200 5.0 5.2 220 NOTE 2 Zener voltage( Vz )is 1N5922 7.5 50 3.0 0.5 400 5.0 6.0 200 measured at T, = 30C. Volt- +NBQ2B 8.2 5.7 3.5 0.5 400 5.0 6.5 182 1N5924 91 41.2 4.0 0.5 500 5.0 7.0 164 age measurement pe per- 11NB925 10 37.5 45 0.2 500 5.0 8.0 150 after ap- 11NBQ26 u at 5.5 0.2 550 1.0 8.4 136 formed 90 seconds P 11N5Q27 12 31.2 6.5 0.25 560 1.0 9.1 125 plication of DC current. 1N5928 13 238.8 7.0 0.25 550 1.0 9.9 116 11N5929 15 5 3.0 0.25 600 1.0 1.4 100 . 11N5830 16 3.4 10 0.25 600 1.0 12.2 93 NOTE 3 The zener impedance 11N5G31 18 20.8 12 0.25 650 1.0 13.7 B : 1NES32 20 18.7 14 0.25 650 1.0 15.2 B is derived from the 60 Hz ac 1NESG3 2 7 17.5 0.28 650 1.0 16.7 voltage, which results when 11NEgBA 24 15.6 19 0.25 700 1.0 18.2 62 ; TNBS35 27 13.9 B 0.25 700 1.0 20.6 55 an ac current having an rms 11NE9G6 0 12.5 8 0.25 750 1.0 2.8 50 value equal to 10% of the DC 11NESG7 B 1.4 zB 0.25 B00 1.0 2.1 45 : . 1 NE9GB 6 10.4 B 0.25 850 1.0 27.4 al zener current(Iz; or bis su +NEQGS 39 9.6 45 0.25 900 4.0 27 B rim on I-ror Lx. +1N5940 3 8.7 53 0.25 950 1.0 32.7 u perimposed zm 2K 11N5O41 47 8.0 67 0.25 1000 1.0 35.8 31 11N5942 51 73 70 0.2 1100 1.0 BB 2 1N5943 56 6.7 86 0.25 1300 1.0 42.6 26 1N5944 62 6.0 400 0.25 1500 1.0 47.1 24 11N5945 68 5.5 120 0.2 1700 1.0 51.2 2 1NEQ46 B 5.0 140 0.25 2000 1.0 56 20 11N5947 82 46 160 0.25 2500 1.0 62.2 18 1NEO48 Q1 44 200 0.25 3000 1.0 69.2 16 7NBQAS 100 3.7 250 0.25 3100 1.0 % 15 11N5950 110 3.4 300 0.25 4000 1.0 3.6 13 71N5951 120 3.1 380 0.25 4500 1.0 g1.2 12 11NBG52 130 2.9 450 0.25 5000 1.0 8.8 "1 11N5953 150 2.5 600 0.2 6000 1.0 14 10 11N5954 160 2.3 700 0.25 6500 1.0 121.6 9.0 11N5Q55 180 2.1 300 0.25 7000 1.0 136.8 8.0 1IN5956 200 12 1200 0.25 900 1.0 152 70 * JEDEC Registered Data JINAN GUDE ELECTRONIC DEVICE Co., LTD.JGD Ct) RATING AND CHARACTERISTIC CURVES(1N5913B THRU 1N5956B ) 2500 2000 1500 4000 Py MAXIMUM POWER DISSIPATION (mW) $00 25 50 7 100 125 150 175 200 LEAD TEMPERATURE Ti(C)3/8" FROM BODY FIGURE 1 POWER DERATING CURVE 1000 8 TYPICAL MAXIMUM POWER (W} 2 o 01 0.10 1.0 10 100 1000 NON-REPETITIVE SQUARE WAVE PULSE WIDTH (ms) FIGURE 2 TRANSIENT SURGE CAPABILITY JINAN GUDE ELECTRONIC DEVICE Co., LTD.